R. Danielou

500 total citations
25 papers, 432 citations indexed

About

R. Danielou is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Danielou has authored 25 papers receiving a total of 432 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Materials Chemistry, 12 papers in Electrical and Electronic Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Danielou's work include Advanced Semiconductor Detectors and Materials (6 papers), Silicon and Solar Cell Technologies (6 papers) and Thin-Film Transistor Technologies (6 papers). R. Danielou is often cited by papers focused on Advanced Semiconductor Detectors and Materials (6 papers), Silicon and Solar Cell Technologies (6 papers) and Thin-Film Transistor Technologies (6 papers). R. Danielou collaborates with scholars based in France, Germany and Italy. R. Danielou's co-authors include J. Fontenille, E. Ligeon, P. Germain, B. Bourdon, S. Squelard, K. Zellama, A.C. Chami, J.C. Bruyère, A. Deneuville and J. N. Daou and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Danielou

24 papers receiving 412 citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
R. Danielou 290 265 114 89 37 25 432
A. V. Drigo 193 0.7× 183 0.7× 118 1.0× 163 1.8× 33 0.9× 23 373
R.J. Chater 235 0.8× 349 1.3× 36 0.3× 200 2.2× 20 0.5× 36 494
G. F. Doughty 166 0.6× 260 1.0× 81 0.7× 223 2.5× 32 0.9× 15 451
J. Auleytner 131 0.5× 186 0.7× 78 0.7× 152 1.7× 41 1.1× 92 331
Morio Inoue 252 0.9× 536 2.0× 165 1.4× 45 0.5× 12 0.3× 55 620
Jenifer N. Lomer 280 1.0× 52 0.2× 46 0.4× 45 0.5× 21 0.6× 21 331
Uta Juda 272 0.9× 236 0.9× 100 0.9× 21 0.2× 60 1.6× 52 438
H. H. Neely 231 0.8× 79 0.3× 44 0.4× 104 1.2× 12 0.3× 12 348
U. Roll 176 0.6× 141 0.5× 117 1.0× 45 0.5× 64 1.7× 20 322
D. Venables 115 0.4× 492 1.9× 171 1.5× 99 1.1× 17 0.5× 44 549

Countries citing papers authored by R. Danielou

Since Specialization
Citations

This map shows the geographic impact of R. Danielou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Danielou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Danielou more than expected).

Fields of papers citing papers by R. Danielou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Danielou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Danielou. The network helps show where R. Danielou may publish in the future.

Co-authorship network of co-authors of R. Danielou

This figure shows the co-authorship network connecting the top 25 collaborators of R. Danielou. A scholar is included among the top collaborators of R. Danielou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Danielou. R. Danielou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Benyagoub, A., L. Thomé, Frédéric Pons, et al.. (1990). On the temperature dependence of amorphous cluster formation in ion-implanted alloys. Physics Letters A. 147(4). 234–239. 6 indexed citations
2.
Ligeon, E., R. Danielou, G. Feuillet, et al.. (1990). Structure of (111) CdTe epilayers on misoriented (001) GaAs. Journal of Applied Physics. 67(5). 2428–2433. 24 indexed citations
3.
Jaouen, C., J.P. Rivière, J. Delafond, et al.. (1989). Mechanisms of phase transformation in low-temperature irradiated NiAl. Journal of Applied Physics. 65(4). 1499–1504. 21 indexed citations
4.
Chami, A.C., E. Ligeon, R. Danielou, & J. Fontenille. (1988). Polarity determination in compound semiconductors by channeling: Application to heteroepitaxy. Applied Physics Letters. 52(18). 1502–1504. 27 indexed citations
5.
Chami, A.C., E. Ligeon, R. Danielou, et al.. (1988). Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling. Applied Physics Letters. 52(22). 1874–1876. 11 indexed citations
6.
Chami, A.C., E. Ligeon, J. Fontenille, G. Feuillet, & R. Danielou. (1988). Study of epitaxial growth of ZnTe on GaAs (001) by channeling. Journal of Applied Physics. 64(2). 637–641. 12 indexed citations
7.
Thomé, L., Frédéric Pons, E. Ligeon, J. Fontenille, & R. Danielou. (1988). Amorphous phase formation in Ni3B by low-temperature deuterium implantation. Journal of Applied Physics. 63(3). 722–725. 12 indexed citations
8.
Chami, A.C., et al.. (1987). Strain in self-implanted silicon. Journal of Applied Physics. 61(1). 161–165. 13 indexed citations
9.
Chami, A.C., E. Ligeon, J. Fontenille, & R. Danielou. (1987). Channeling analysis of mismatch strain in heteroepitaxial CdTe on Cd0.96Zn0.04Te(001). Journal of Applied Physics. 62(9). 3718–3721. 6 indexed citations
10.
Ligeon, E., et al.. (1986). Deuterium location and migration in metals: Comparison of implantation and solid solution. Journal of Applied Physics. 59(1). 108–119. 52 indexed citations
11.
Danielou, R., J. Fontenille, E. Ligeon, & Yuh Fukai. (1984). Channeling studies of deuterium: Defect interactions in vanadium. Journal of Applied Physics. 55(4). 871–876. 15 indexed citations
12.
Gérard, P., P. Martín, & R. Danielou. (1983). Oxygen defect profile in implanted garnet. Journal of Magnetism and Magnetic Materials. 35(1-3). 303–306. 4 indexed citations
13.
Bontemps, André, et al.. (1982). Scanning electron-beam annealing of arsenic- and bismuth-implanted silicon. Journal of Applied Physics. 53(7). 5258–5264. 4 indexed citations
14.
Gérard, P., et al.. (1982). Ion implantation profiles in bubble garnets. Thin Solid Films. 88(1). 75–79. 10 indexed citations
15.
Campisano, S. U., P. Baeri, M. G. Grimaldi, et al.. (1981). Laser annealing of Bi implanted <111> and <100> silicon. Applied Physics A. 25(1). 57–63. 1 indexed citations
16.
Zellama, K., P. Germain, S. Squelard, et al.. (1981). Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion study. Physical review. B, Condensed matter. 23(12). 6648–6667. 94 indexed citations
17.
Danielou, R., J. N. Daou, E. Ligeon, & P. Vajda. (1981). Lattice location of deuterium in lutetium. physica status solidi (a). 67(2). 453–460. 26 indexed citations
18.
Deneuville, A., et al.. (1981). Matrix controlled equilibrium between the various H sites in annealed sputtered a-Si:H. Journal of Physics C Solid State Physics. 14(16). 2279–2296. 10 indexed citations
19.
Bruyère, J.C., et al.. (1980). Influence of hydrogen on optical properties of a-Si : H. Journal of Applied Physics. 51(4). 2199–2205. 40 indexed citations
20.
Bontemps, André, E. Ligeon, & R. Danielou. (1974). Channelling studies of ion implantation induced lattice defects in zinc telluride. Radiation Effects. 22(3). 195–204. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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