Atsushi Kenjo

640 total citations
48 papers, 562 citations indexed

About

Atsushi Kenjo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Atsushi Kenjo has authored 48 papers receiving a total of 562 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 20 papers in Biomedical Engineering. Recurrent topics in Atsushi Kenjo's work include Thin-Film Transistor Technologies (30 papers), Silicon Nanostructures and Photoluminescence (24 papers) and Nanowire Synthesis and Applications (19 papers). Atsushi Kenjo is often cited by papers focused on Thin-Film Transistor Technologies (30 papers), Silicon Nanostructures and Photoluminescence (24 papers) and Nanowire Synthesis and Applications (19 papers). Atsushi Kenjo collaborates with scholars based in Japan and United States. Atsushi Kenjo's co-authors include Taizoh Sadoh, Masanobu Miyao, Hiroshi Kanno, Isao Tsunoda, Tanemasa Asano, Kaoru Toko, Kazuki Ueda, T. Tsurushima, Akira Baba and Shinya Yamaguchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Atsushi Kenjo

45 papers receiving 557 citations

Peers

Atsushi Kenjo
M. Nerding Germany
W. Kissinger Germany
E. Ose Germany
M. Hopstaken Netherlands
R.E. Proano United States
P. Ronsheim United States
M. Nerding Germany
Atsushi Kenjo
Citations per year, relative to Atsushi Kenjo Atsushi Kenjo (= 1×) peers M. Nerding

Countries citing papers authored by Atsushi Kenjo

Since Specialization
Citations

This map shows the geographic impact of Atsushi Kenjo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Atsushi Kenjo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Atsushi Kenjo more than expected).

Fields of papers citing papers by Atsushi Kenjo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Atsushi Kenjo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Atsushi Kenjo. The network helps show where Atsushi Kenjo may publish in the future.

Co-authorship network of co-authors of Atsushi Kenjo

This figure shows the co-authorship network connecting the top 25 collaborators of Atsushi Kenjo. A scholar is included among the top collaborators of Atsushi Kenjo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Atsushi Kenjo. Atsushi Kenjo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kanno, Hiroshi, et al.. (2007). Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film. ECS Transactions. 11(6). 395–400. 1 indexed citations
2.
Kenjo, Atsushi, et al.. (2007). Influence of substrate orientation on low-temperature epitaxial growth of ferromagnetic silicide Fe3Si on Si. Thin Solid Films. 515(22). 8250–8253. 12 indexed citations
3.
Sadoh, Taizoh, et al.. (2006). Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge. Applied Physics Letters. 89(18). 46 indexed citations
4.
Kanno, Hiroshi, Atsushi Kenjo, Taizoh Sadoh, & Masanobu Miyao. (2006). Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2. Japanese Journal of Applied Physics. 45(5S). 4351–4351. 11 indexed citations
5.
Kanno, Hiroshi, et al.. (2005). Au-induced lateral crystallization of a-Si1−Ge (x: 0–1) at low temperature. Thin Solid Films. 508(1-2). 44–47. 16 indexed citations
6.
Kanno, Hiroshi, et al.. (2005). Low-Temperature Formation of Poly-Si1-xGex (x: 0–1) on SiO2 by Au-Mediated Lateral Crystallization. Japanese Journal of Applied Physics. 44(4S). 2405–2405. 7 indexed citations
7.
Kanno, Hiroshi, et al.. (2004). 400 °C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization. Materials Science in Semiconductor Processing. 8(1-3). 79–82. 7 indexed citations
8.
Tsunoda, Isao, et al.. (2004). Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion. Thin Solid Films. 451-452. 489–492. 3 indexed citations
9.
Kanno, Hiroshi, Atsushi Kenjo, Taizoh Sadoh, & Masanobu Miyao. (2004). Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure. Materials Science in Semiconductor Processing. 8(1-3). 83–88. 4 indexed citations
10.
Murakami, Yasukazu, Atsushi Kenjo, Taizoh Sadoh, Tsuyoshi Yoshitake, & Masanobu Miyao. (2004). Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure. Thin Solid Films. 461(1). 68–71. 6 indexed citations
11.
Kanno, Hiroshi, Atsushi Kenjo, Taizoh Sadoh, & Masanobu Miyao. (2004). Enhancement of metal-induced crystallization in Ge/Si/Ni/SiO2 layered structure. Thin Solid Films. 451-452. 324–327. 4 indexed citations
12.
Sadoh, Taizoh, et al.. (2003). Etching characteristics of SiO2 irradiated with focused ion beam. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 206. 478–481. 9 indexed citations
13.
Sadoh, Taizoh, Isao Tsunoda, Takahiro Nagata, Atsushi Kenjo, & Masanobu Miyao. (2003). Enhancement of bulk nucleation in a-Si1−Ge on SiO2 for low-temperature solid-phase crystallization. Thin Solid Films. 427(1-2). 96–100. 3 indexed citations
14.
Kanno, Hiroshi, Isao Tsunoda, Atsushi Kenjo, et al.. (2003). Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator. Japanese Journal of Applied Physics. 42(Part 1, No. 4B). 1933–1936. 17 indexed citations
15.
Tsunoda, Isao, Atsushi Kenjo, Taizoh Sadoh, & Masanobu Miyao. (2003). Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing. Applied Surface Science. 224(1-4). 231–234. 19 indexed citations
16.
Sadoh, Taizoh, et al.. (2002). Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON. Japanese Journal of Applied Physics. 41(Part 1, No. 4B). 2468–2471. 1 indexed citations
17.
Sadoh, Taizoh, et al.. (2002). Thermal stability of B in poly-SiGe on SiON. Materials Science and Engineering B. 89(1-3). 129–132. 1 indexed citations
18.
Baba, Akira, Atsushi Kenjo, Taizoh Sadoh, et al.. (2002). Silicon fine structure formation on sapphire with focused ion beam. 2. 1101–1104. 1 indexed citations
19.
Sadoh, Taizoh, et al.. (2001). High-Performance MOS Tunneling Cathode with CoSi2 Gate Electrode. Japanese Journal of Applied Physics. 40(4S). 2775–2775. 1 indexed citations
20.
Sadoh, Taizoh, Kazuyoshi Tsukamoto, Akira Baba, et al.. (1997). Deep level of iron-hydrogen complex in silicon. Journal of Applied Physics. 82(8). 3828–3831. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026