T. Lacrevaz

449 total citations
37 papers, 172 citations indexed

About

T. Lacrevaz is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Aerospace Engineering. According to data from OpenAlex, T. Lacrevaz has authored 37 papers receiving a total of 172 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 15 papers in Electronic, Optical and Magnetic Materials and 6 papers in Aerospace Engineering. Recurrent topics in T. Lacrevaz's work include 3D IC and TSV technologies (16 papers), Copper Interconnects and Reliability (14 papers) and Electromagnetic Compatibility and Noise Suppression (13 papers). T. Lacrevaz is often cited by papers focused on 3D IC and TSV technologies (16 papers), Copper Interconnects and Reliability (14 papers) and Electromagnetic Compatibility and Noise Suppression (13 papers). T. Lacrevaz collaborates with scholars based in France, Switzerland and Hungary. T. Lacrevaz's co-authors include B. Fléchet, C. Bermond, A. Farcy, J. Torrès, Emmanuel Defaÿ, Trinh Vo, F. de Crécy, T. Bertaud, N. Sillon and P. Ancey and has published in prestigious journals such as Applied Physics Letters, Microelectronic Engineering and IEEE Transactions on Components and Packaging Technologies.

In The Last Decade

T. Lacrevaz

35 papers receiving 165 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Lacrevaz France 7 145 37 36 33 10 37 172
B. Fléchet France 10 251 1.7× 60 1.6× 56 1.6× 32 1.0× 12 1.2× 43 270
C. Bermond France 8 191 1.3× 53 1.4× 62 1.7× 36 1.1× 14 1.4× 44 222
Gokul Kumar United States 6 223 1.5× 19 0.5× 11 0.3× 48 1.5× 12 1.2× 15 243
C. Perrot France 8 159 1.1× 18 0.5× 45 1.3× 38 1.2× 5 0.5× 15 188
V. Balan France 8 141 1.0× 35 0.9× 29 0.8× 36 1.1× 21 156
Minseok Kang South Korea 11 262 1.8× 23 0.6× 25 0.7× 28 0.8× 2 0.2× 42 300
Zitao Shi China 10 282 1.9× 29 0.8× 126 3.5× 27 0.8× 8 0.8× 47 332
Ki-Hyun Yoon South Korea 8 340 2.3× 39 1.1× 80 2.2× 28 0.8× 7 0.7× 12 367
L. Prabhu United States 10 242 1.7× 27 0.7× 72 2.0× 15 0.5× 2 0.2× 17 256
Seungchan Lee South Korea 11 313 2.2× 10 0.3× 20 0.6× 41 1.2× 32 3.2× 31 336

Countries citing papers authored by T. Lacrevaz

Since Specialization
Citations

This map shows the geographic impact of T. Lacrevaz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Lacrevaz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Lacrevaz more than expected).

Fields of papers citing papers by T. Lacrevaz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Lacrevaz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Lacrevaz. The network helps show where T. Lacrevaz may publish in the future.

Co-authorship network of co-authors of T. Lacrevaz

This figure shows the co-authorship network connecting the top 25 collaborators of T. Lacrevaz. A scholar is included among the top collaborators of T. Lacrevaz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Lacrevaz. T. Lacrevaz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Lacrevaz, T., et al.. (2022). High gain Vivaldi antenna from 26 up to 40 GHz for 5G applications. Microwave and Optical Technology Letters. 64(7). 1267–1271. 2 indexed citations
4.
Bermond, C., et al.. (2017). Modeling and Frequency Performance Analysis of Through Silicon Capacitors in Silicon Interposers. IEEE Transactions on Components Packaging and Manufacturing Technology. 7(4). 477–484. 5 indexed citations
5.
Lacrevaz, T., et al.. (2014). Electrical Broadband Characterization Method of Dielectric Molding in 3-D IC and Results. IEEE Transactions on Components Packaging and Manufacturing Technology. 4(9). 1515–1522. 3 indexed citations
6.
Lacrevaz, T., A. Farcy, Philip R. LeDuc, et al.. (2014). RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits. Microelectronic Engineering. 130. 74–81. 3 indexed citations
7.
Reinhardt, Alexandre, C. Billard, Emmanuel Defaÿ, et al.. (2011). Lateral Field Excitation of membrane-based Aluminum Nitride resonators. 6. 1–5. 5 indexed citations
8.
Lacrevaz, T., Jean Charbonnier, C. Fuchs, et al.. (2011). Extraction of equivalent high frequency models for TSV and RDL interconnects embedded in stacks of the 3D integration technology. 19. 61–64. 6 indexed citations
9.
Rivaz, S. de, A. Farcy, D. Deschacht, T. Lacrevaz, & B. Fléchet. (2010). Effective interconnect networks design in CMOS 45 nm circuits to joint reductions of XT and delay for transmission of very high speed signals. 1–4. 2 indexed citations
10.
Lacrevaz, T., C. Bermond, B. Fléchet, et al.. (2010). Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking. Microelectronic Engineering. 88(5). 729–733. 3 indexed citations
11.
Lacrevaz, T., et al.. (2010). Innovative HF extraction procedure of the characteristic impedance for embedded planar transmission line on high conductive Si substrate. 606–609. 1 indexed citations
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Blampey, B., A. Farcy, T. Lacrevaz, et al.. (2009). Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32nm node. Microelectronic Engineering. 87(3). 329–332. 1 indexed citations
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Blampey, B., B. Fléchet, A. Farcy, et al.. (2007). Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45nm node. Microelectronic Engineering. 84(11). 2744–2749. 1 indexed citations
16.
Lacrevaz, T., B. Fléchet, A. Farcy, et al.. (2006). Wide band frequency and in situ characterisation of high permittivity insulators (High-K) for H.F. integrated passives. Microelectronic Engineering. 83(11-12). 2184–2188. 11 indexed citations
17.
Bermond, C., B. Fléchet, A. Farcy, et al.. (2006). High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits. Microelectronic Engineering. 83(11-12). 2341–2345. 1 indexed citations
18.
Lacrevaz, T., B. Fléchet, A. Farcy, et al.. (2006). Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL. 78–80. 1 indexed citations
19.
Farcy, A., C. Bermond, J. Torrès, et al.. (2005). Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors. Microelectronic Engineering. 82(3-4). 521–528. 9 indexed citations
20.
Bermond, C., A. Farcy, T. Lacrevaz, et al.. (2005). Impact of Design on High Frequency Performances of Advanced MIM Capacitors Using SiN Dielectric Layers. IEEE MTT-S International Microwave Symposium Digest, 2005.. 24. 291–294. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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