T. E. F. M. Standaert

1.6k total citations
16 papers, 1.4k citations indexed

About

T. E. F. M. Standaert is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, T. E. F. M. Standaert has authored 16 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Electronic, Optical and Magnetic Materials and 6 papers in Mechanics of Materials. Recurrent topics in T. E. F. M. Standaert's work include Plasma Diagnostics and Applications (12 papers), Semiconductor materials and devices (9 papers) and Copper Interconnects and Reliability (8 papers). T. E. F. M. Standaert is often cited by papers focused on Plasma Diagnostics and Applications (12 papers), Semiconductor materials and devices (9 papers) and Copper Interconnects and Reliability (8 papers). T. E. F. M. Standaert collaborates with scholars based in United States. T. E. F. M. Standaert's co-authors include G. S. Oehrlein, M. Schaepkens, N. R. Rueger, J. M. Cook, T. Dalton, Eric Joseph, M. F. Doemling, Christer Hedlund, JJ Beulens and P. J. Matsuo and has published in prestigious journals such as Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, IBM Journal of Research and Development and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

In The Last Decade

T. E. F. M. Standaert

16 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. E. F. M. Standaert United States 13 1.3k 568 459 391 151 16 1.4k
M. Schaepkens United States 20 1.4k 1.1× 591 1.0× 483 1.1× 335 0.9× 190 1.3× 23 1.6k
N. R. Rueger United States 9 864 0.7× 385 0.7× 303 0.7× 223 0.6× 94 0.6× 11 945
Thomas Tillocher France 19 876 0.7× 257 0.5× 369 0.8× 185 0.5× 317 2.1× 54 1.1k
Akinori Ebe Japan 15 483 0.4× 263 0.5× 346 0.8× 58 0.1× 42 0.3× 50 669
John L. Vossen United States 10 536 0.4× 266 0.5× 364 0.8× 116 0.3× 135 0.9× 18 823
G. A. Antonelli United States 17 501 0.4× 262 0.5× 306 0.7× 360 0.9× 196 1.3× 57 869
A. Kornblit United States 17 624 0.5× 164 0.3× 145 0.3× 47 0.1× 107 0.7× 50 701
D. J. Vitkavage United States 11 781 0.6× 186 0.3× 199 0.4× 85 0.2× 141 0.9× 27 876
Bibhuti B. Sahu South Korea 21 833 0.7× 214 0.4× 635 1.4× 87 0.2× 135 0.9× 64 1.0k
Masaki Hirayama Japan 16 720 0.6× 79 0.1× 239 0.5× 143 0.4× 80 0.5× 76 821

Countries citing papers authored by T. E. F. M. Standaert

Since Specialization
Citations

This map shows the geographic impact of T. E. F. M. Standaert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. F. M. Standaert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. F. M. Standaert more than expected).

Fields of papers citing papers by T. E. F. M. Standaert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. E. F. M. Standaert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. F. M. Standaert. The network helps show where T. E. F. M. Standaert may publish in the future.

Co-authorship network of co-authors of T. E. F. M. Standaert

This figure shows the co-authorship network connecting the top 25 collaborators of T. E. F. M. Standaert. A scholar is included among the top collaborators of T. E. F. M. Standaert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. E. F. M. Standaert. T. E. F. M. Standaert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Standaert, T. E. F. M., Christer Hedlund, Eric Joseph, G. S. Oehrlein, & T. Dalton. (2003). Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(1). 53–60. 241 indexed citations
2.
Standaert, T. E. F. M., P. J. Matsuo, G. S. Oehrlein, et al.. (2001). High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(2). 435–446. 40 indexed citations
3.
Standaert, T. E. F. M., Eric Joseph, G. S. Oehrlein, et al.. (2000). Etching of xerogel in high-density fluorocarbon plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(6). 2742–2748. 51 indexed citations
4.
Rueger, N. R., M. F. Doemling, M. Schaepkens, et al.. (1999). Selective etching of SiO 2 over polycrystalline silicon using CHF 3 in an inductively coupled plasma reactor. 17(5). 2492–2502. 1 indexed citations
5.
Schaepkens, M., et al.. (1999). Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(1). 26–37. 275 indexed citations
6.
Schaepkens, M., N. R. Rueger, JJ Beulens, et al.. (1999). Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(6). 3272–3280. 26 indexed citations
7.
Jain, Anurag, Svetlana Rogojevic, William N. Gill, et al.. (1999). Processing and Characterization of Silica Xerogel Films for Low-K Dielectric Applications. MRS Proceedings. 565. 10 indexed citations
8.
Oehrlein, G. S., M. F. Doemling, B. E. E. Kastenmeier, et al.. (1999). Surface science issues in plasma etching. IBM Journal of Research and Development. 43(1.2). 181–197. 38 indexed citations
9.
Matsuo, P. J., T. E. F. M. Standaert, Susan D. Allen, G. S. Oehrlein, & T. Dalton. (1999). Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1435–1447. 39 indexed citations
10.
Standaert, T. E. F. M., P. J. Matsuo, Susan D. Allen, G. S. Oehrlein, & T. Dalton. (1999). Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(3). 741–748. 64 indexed citations
11.
Rueger, N. R., M. F. Doemling, M. Schaepkens, et al.. (1999). Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(5). 2492–2502. 67 indexed citations
12.
Schaepkens, M., et al.. (1998). Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(4). 2099–2107. 95 indexed citations
13.
Standaert, T. E. F. M., P. J. Matsuo, Susan D. Allen, et al.. (1998). High-Density Plasma Etching of Low Dielectric Constant Materials. MRS Proceedings. 511. 7 indexed citations
14.
Standaert, T. E. F. M., et al.. (1998). High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(1). 239–249. 225 indexed citations
15.
Standaert, T. E. F. M., et al.. (1998). Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(6). 3344–3348. 12 indexed citations
16.
Rueger, N. R., JJ Beulens, M. Schaepkens, et al.. (1997). Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(4). 1881–1889. 229 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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