T. E. F. M. Standaert
- Electrical and Electronic Engineering top 5%
- Mechanics of Materials top 2%
- Materials Chemistry top 10%
- Electronic, Optical and Magnetic Materials top 5%
- Biomedical Engineering
- Co-authors
- G. S. OehrleinM. SchaepkensN. R. RuegerJ. M. CookT. DaltonEric JosephM. F. DoemlingJJ Beulens
- Topics
- Plasma Diagnostics and Applications (12 papers)Semiconductor materials and devices (9 papers)Copper Interconnects and Reliability (8 papers)
- Cited by
- Mechanics of MaterialsElectrical and Electronic EngineeringElectronic, Optical and Magnetic Materials
- Journals
- Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsIBM Journal of Research and DevelopmentJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
- Partner nations
- United States
In The Last Decade
T. E. F. M. Standaert
16 papers receiving 1.4k citations
Peers
Comparison fields: 5 of 39
- Electrical and Electronic Engineering 1.3k
- Mechanics of Materials 568
- Materials Chemistry 459
- Electronic, Optical and Magnetic Materials 391
- Biomedical Engineering 151
Countries citing papers authored by T. E. F. M. Standaert
This map shows the geographic impact of T. E. F. M. Standaert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. E. F. M. Standaert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. E. F. M. Standaert more than expected).
Fields of papers citing papers by T. E. F. M. Standaert
This network shows the impact of papers produced by T. E. F. M. Standaert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. E. F. M. Standaert. The network helps show where T. E. F. M. Standaert may publish in the future.
Co-authorship network of co-authors of T. E. F. M. Standaert
This figure shows the co-authorship network connecting the top 25 collaborators of T. E. F. M. Standaert. A scholar is included among the top collaborators of T. E. F. M. Standaert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. E. F. M. Standaert. T. E. F. M. Standaert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 241 | |
| 2 | 40 | |
| 3 | 51 | |
| 4 | Selective etching of SiO 2 over polycrystalline silicon using CHF 3 in an inductively coupled plasma reactor | 1 |
| 5 | 275 | |
| 6 | 26 | |
| 7 | 38 | |
| 8 | 10 | |
| 9 | 64 | |
| 10 | 39 | |
| 11 | 67 | |
| 12 | 225 | |
| 13 | 12 | |
| 14 | 7 | |
| 15 | 95 | |
| 16 | 229 |
About T. E. F. M. Standaert
T. E. F. M. Standaert is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Mechanics of Materials, having authored 16 papers that have together received 1.4k indexed citations. Recurring topics across this work include Plasma Diagnostics and Applications (12 papers), Semiconductor materials and devices (9 papers) and Copper Interconnects and Reliability (8 papers). The work is most often cited by research in Mechanics of Materials (568 citations), Electrical and Electronic Engineering (1.3k citations) and Electronic, Optical and Magnetic Materials (391 citations). T. E. F. M. Standaert has collaborated with scholars based in United States. Frequent co-authors include G. S. Oehrlein, M. Schaepkens, N. R. Rueger, J. M. Cook, T. Dalton, Eric Joseph, M. F. Doemling, JJ Beulens, Christer Hedlund and P. J. Matsuo. Their work appears in journals such as Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, IBM Journal of Research and Development and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.