P. J. Matsuo

799 total citations
14 papers, 686 citations indexed

About

P. J. Matsuo is a scholar working on Electrical and Electronic Engineering, Mechanics of Materials and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. J. Matsuo has authored 14 papers receiving a total of 686 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 7 papers in Mechanics of Materials and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. J. Matsuo's work include Semiconductor materials and devices (12 papers), Plasma Diagnostics and Applications (11 papers) and Metal and Thin Film Mechanics (7 papers). P. J. Matsuo is often cited by papers focused on Semiconductor materials and devices (12 papers), Plasma Diagnostics and Applications (11 papers) and Metal and Thin Film Mechanics (7 papers). P. J. Matsuo collaborates with scholars based in United States. P. J. Matsuo's co-authors include G. S. Oehrlein, B. E. E. Kastenmeier, JJ Beulens, T. E. F. M. Standaert, J.G. Langan, T. Dalton, Susan D. Allen, M. Schaepkens, M. F. Doemling and R.E. Ellefson and has published in prestigious journals such as Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and IBM Journal of Research and Development.

In The Last Decade

P. J. Matsuo

14 papers receiving 671 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. J. Matsuo United States	13	598	272	226	139	82	14	686
A. Weber Germany	14	222 0.4×	255 0.9×	263 1.2×	69 0.5×	40 0.5×	21	449
Catherine B. Labelle United States	14	365 0.6×	163 0.6×	225 1.0×	142 1.0×	104 1.3×	34	551
Shoji Den Japan	14	295 0.5×	95 0.3×	263 1.2×	63 0.5×	65 0.8×	30	488
S.P. Speakman United Kingdom	9	340 0.6×	136 0.5×	314 1.4×	37 0.3×	117 1.4×	14	538
M. A. Blauw Netherlands	14	597 1.0×	117 0.4×	181 0.8×	113 0.8×	171 2.1×	32	678
Tahsin Faraz Netherlands	15	721 1.2×	163 0.6×	472 2.1×	93 0.7×	48 0.6×	18	813
Junqing Lu South Korea	13	235 0.4×	251 0.9×	231 1.0×	114 0.8×	58 0.7×	28	466
Karsten Arts Netherlands	12	488 0.8×	89 0.3×	366 1.6×	67 0.5×	36 0.4×	16	562
F. Emmi United States	10	187 0.3×	84 0.3×	157 0.7×	72 0.5×	85 1.0×	18	373
Keiko Kushida Japan	14	286 0.5×	108 0.4×	631 2.8×	159 1.1×	425 5.2×	22	753

Countries citing papers authored by P. J. Matsuo

Since Specialization

Citations

This map shows the geographic impact of P. J. Matsuo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. J. Matsuo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. J. Matsuo more than expected).

Fields of papers citing papers by P. J. Matsuo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. J. Matsuo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. J. Matsuo. The network helps show where P. J. Matsuo may publish in the future.

Co-authorship network of co-authors of P. J. Matsuo

This figure shows the co-authorship network connecting the top 25 collaborators of P. J. Matsuo. A scholar is included among the top collaborators of P. J. Matsuo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. J. Matsuo. P. J. Matsuo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Kastenmeier, B. E. E., et al.. (2001). Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(1). 25–30. 36 indexed citations

Standaert, T. E. F. M., P. J. Matsuo, G. S. Oehrlein, et al.. (2001). High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(2). 435–446. 40 indexed citations

Kastenmeier, B. E. E., P. J. Matsuo, & G. S. Oehrlein. (1999). Highly selective etching of silicon nitride over silicon and silicon dioxide. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(6). 3179–3184. 85 indexed citations

Schaepkens, M., N. R. Rueger, JJ Beulens, et al.. (1999). Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(6). 3272–3280. 26 indexed citations

Matsuo, P. J., B. E. E. Kastenmeier, G. S. Oehrlein, & J.G. Langan. (1999). Silicon etching in NF3/O2 remote microwave plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(5). 2431–2437. 31 indexed citations

Oehrlein, G. S., M. F. Doemling, B. E. E. Kastenmeier, et al.. (1999). Surface science issues in plasma etching. IBM Journal of Research and Development. 43(1.2). 181–197. 38 indexed citations

Matsuo, P. J., T. E. F. M. Standaert, Susan D. Allen, G. S. Oehrlein, & T. Dalton. (1999). Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1435–1447. 39 indexed citations

Standaert, T. E. F. M., P. J. Matsuo, Susan D. Allen, G. S. Oehrlein, & T. Dalton. (1999). Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(3). 741–748. 64 indexed citations

Standaert, T. E. F. M., P. J. Matsuo, Susan D. Allen, et al.. (1998). High-Density Plasma Etching of Low Dielectric Constant Materials. MRS Proceedings. 511. 7 indexed citations

10.

Kastenmeier, B. E. E., P. J. Matsuo, G. S. Oehrlein, & J.G. Langan. (1998). Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(4). 2047–2056. 85 indexed citations

11.

Matsuo, P. J., B. E. E. Kastenmeier, JJ Beulens, & G. S. Oehrlein. (1997). Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 15(4). 1801–1813. 63 indexed citations

12.

Oehrlein, G. S., P. J. Matsuo, M. F. Doemling, et al.. (1996). Study of plasma - surface interactions: chemical dry etching and high-density plasma etching. Plasma Sources Science and Technology. 5(2). 193–199. 27 indexed citations

13.

Kastenmeier, B. E. E., P. J. Matsuo, JJ Beulens, & G. S. Oehrlein. (1996). Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 14(5). 2802–2813. 120 indexed citations

14.

Beulens, JJ, B. E. E. Kastenmeier, P. J. Matsuo, & G. S. Oehrlein. (1995). Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives. Applied Physics Letters. 66(20). 2634–2636. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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