Stéphane Bécu

406 total citations
19 papers, 211 citations indexed

About

Stéphane Bécu is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Condensed Matter Physics. According to data from OpenAlex, Stéphane Bécu has authored 19 papers receiving a total of 211 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 5 papers in Biomedical Engineering and 4 papers in Condensed Matter Physics. Recurrent topics in Stéphane Bécu's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). Stéphane Bécu is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). Stéphane Bécu collaborates with scholars based in France, Switzerland and Czechia. Stéphane Bécu's co-authors include Jean‐Luc Autran, S. Crémer, C. Dupré, T. Ernst, S. Deleonibus, R. Gwoziecki, G. Ghibaudo, C. Le Royer, Laura Vauche and Émilie Bernard and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solid-State Electronics.

In The Last Decade

Stéphane Bécu

18 papers receiving 204 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stéphane Bécu France 8 195 52 46 44 23 19 211
Anyan Du China 8 179 0.9× 41 0.8× 70 1.5× 34 0.8× 11 0.5× 36 213
Huimei Zhou United States 9 213 1.1× 58 1.1× 75 1.6× 28 0.6× 17 0.7× 30 253
Aubrey Penn United States 7 83 0.4× 42 0.8× 93 2.0× 57 1.3× 33 1.4× 23 165
Tom Davenport United States 6 111 0.6× 61 1.2× 94 2.0× 30 0.7× 8 0.3× 12 163
H.J. Tao Taiwan 9 296 1.5× 44 0.8× 46 1.0× 13 0.3× 10 0.4× 15 307
L. Prabhu United States 10 242 1.2× 15 0.3× 72 1.6× 27 0.6× 7 0.3× 17 256
S. Cristoloveanu France 9 295 1.5× 22 0.4× 27 0.6× 21 0.5× 56 2.4× 14 312
You-Seok Suh United States 12 264 1.4× 16 0.3× 63 1.4× 49 1.1× 8 0.3× 20 283
Ryosuke Iijima Japan 13 519 2.7× 33 0.6× 73 1.6× 73 1.7× 17 0.7× 70 565
Kuangye Lu United States 7 63 0.3× 38 0.7× 100 2.2× 41 0.9× 50 2.2× 11 151

Countries citing papers authored by Stéphane Bécu

Since Specialization
Citations

This map shows the geographic impact of Stéphane Bécu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stéphane Bécu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stéphane Bécu more than expected).

Fields of papers citing papers by Stéphane Bécu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stéphane Bécu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stéphane Bécu. The network helps show where Stéphane Bécu may publish in the future.

Co-authorship network of co-authors of Stéphane Bécu

This figure shows the co-authorship network connecting the top 25 collaborators of Stéphane Bécu. A scholar is included among the top collaborators of Stéphane Bécu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stéphane Bécu. Stéphane Bécu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
2.
Buckley, Julien, Stéphane Bécu, Matthew Charles, et al.. (2022). Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling.
3.
Theodorou, Christoforos, C. Leroux, Laura Vauche, et al.. (2022). New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs. Solid-State Electronics. 200. 108555–108555. 3 indexed citations
4.
Vauche, Laura, E. Martínez, C. Le Royer, et al.. (2021). Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH. ACS Applied Electronic Materials. 3(3). 1170–1177. 27 indexed citations
5.
Widiez, J., D. Blachier, Paul‐Henri Haumesser, et al.. (2019). Advanced Substrates for GaN-Based Power Devices. SPIRE - Sciences Po Institutional REpository. 168–174. 3 indexed citations
6.
Ernst, T., K. Tachi, C. Dupré, et al.. (2009). 3D Suspended Nanowires Integration for CMOS and Beyond. ECS Transactions. 25(7). 471–478. 2 indexed citations
7.
Lorut, F., Stéphane Bécu, C. Dupré, et al.. (2009). A Study Of Gate-All-Around Transistors By Electron Tomography. AIP conference proceedings. 290–293. 1 indexed citations
8.
Bécu, Stéphane, C. Dupré, V. Maffini-Alvaro, et al.. (2008). Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization. ECS Transactions. 13(1). 195–199. 15 indexed citations
9.
Ernst, T., Émilie Bernard, C. Dupré, et al.. (2008). 3D multichannels and stacked nanowires technologies for new design opportunities in nanoelectronics. 265–268. 8 indexed citations
10.
Ernst, T., Laurent Duraffourg, C. Dupré, et al.. (2008). Novel Si-based nanowire devices: Will they serve ultimate MOSFETs scaling or ultimate hybrid integration?. 1–4. 36 indexed citations
11.
Foucher, J., et al.. (2008). The CD metrology perspectives and future trends. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2 indexed citations
12.
Barnola, S., C. Vizioz, Nathalie Vulliet, et al.. (2008). Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications. ECS Transactions. 16(10). 923–934. 10 indexed citations
13.
Dupré, C., T. Ernst, S. Borel, et al.. (2008). Impact of isotropic plasma etching on channel Si surface roughness measured by AFM and on NMOS inversion layer mobility. 133–136. 7 indexed citations
14.
Ernst, T., C. Dupré, J.-Ch. Barbé, et al.. (2007). 3D Stacked Nanowires CMOS Integration with a Damascene Finfet Process. 2 indexed citations
15.
Bécu, Stéphane, S. Crémer, & Jean‐Luc Autran. (2006). Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides. Applied Physics Letters. 88(5). 39 indexed citations
16.
Bécu, Stéphane, et al.. (2006). Capacitance non-linearity study in Al2O3 MIM capacitors using an ionic polarization model. Microelectronic Engineering. 83(11-12). 2422–2426. 21 indexed citations
17.
Richard, C., Daniel L. Benoit, J.‐P. Manceau, et al.. (2006). High Performances 3D Damascene MIM Capacitors Integrated in Copper Back-End Technologies. 1–4. 7 indexed citations
18.
Deloffre, E., L. Montès, G. Ghibaudo, et al.. (2005). Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors. Microelectronics Reliability. 45(5-6). 925–928. 23 indexed citations
19.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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