Munaf Rahimo

2.5k citations

126 papers · 2.0k indexed · h-index 26

Impact in

Electrical and Electronic Engineering top 2%
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced DC-DC Converters
- Electromagnetic Compatibility and Noise Suppression
- Multilevel Inverters and Converters
- HVDC Systems and Fault Protection
- Electrostatic Discharge in Electronics
- Semiconductor materials and devices
Condensed Matter Physics top 10%

Papers in ⓘ

Electrical and Electronic Engineering 125
- Silicon Carbide Semiconductor Technologies 121
- Advancements in Semiconductor Devices and Circuit Design 42
- Electromagnetic Compatibility and Noise Suppression 31
- Electrostatic Discharge in Electronics 27
- Advanced DC-DC Converters 22
- Semiconductor materials and devices 21
- Multilevel Inverters and Converters 19
Condensed Matter Physics 8

Co-authors: A. Kopta (23 shared papers)U. Schlapbach (16 shared papers)Umamaheswara Vemulapati (26 shared papers)Stefan Linder (10 shared papers)N.Y.A. Shammas (6 shared papers)J. Vobecký (18 shared papers)L. Storasta (13 shared papers)Charalampos Papadopoulos (17 shared papers)
Journals: IEEE Electron Device Letters (7 papers)Microelectronics Reliability (5 papers)IEEE Transactions on Electron Devices (4 papers)IEEE Transactions on Power Electronics (3 papers)IET Power Electronics (2 papers)
Partner nations: Switzerland United Kingdom Denmark

In The Last Decade

Munaf Rahimo

121 papers receiving 1.9k citations

Peers

Countries citing papers authored by Munaf Rahimo

Since Specialization

Citations

This map shows the geographic impact of Munaf Rahimo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Munaf Rahimo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Munaf Rahimo more than expected).

Fields of papers citing papers by Munaf Rahimo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Munaf Rahimo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Munaf Rahimo. The network helps show where Munaf Rahimo may publish in the future.

Co-authors

The 25 scholars most cited alongside Munaf Rahimo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Munaf Rahimo Line = papers co-authored together Munaf Rahimo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 126 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid IEEE Transactions on Power Electronics ·Munaf Rahimo, Francisco Canales, Renato Amaral Minamisawa, Charalampos Papadopoulos, Umamaheswara Vemulapati, Andrei Mihăilă, Slavo Kicin, Uwe Drofenik	2015	123
2	Freewheeling diode reverse-recovery failure modes in IGBT applications IEEE Transactions on Industry Applications ·Munaf Rahimo, N.Y.A. Shammas	2001	95
3	1MW bi-directional DC solid state circuit breaker based on air cooled reverse blocking-IGCT Francesco Agostini, Umamaheswara Vemulapati, Daniele Torresin, Martin Arnold, Munaf Rahimo, Antonello Antoniazzi, Luca Raciti, Davide Pessina, Harish Suryanarayana	2015	76
4	The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications Munaf Rahimo, A. Kopta, U. Schlapbach, J. Vobecký, R. Schnell, Sven Klaka	2009	75
5	Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched Applications IEEE Transactions on Power Electronics ·Dražen Dujić, Gina Kristin Steinke, Marco Bellini, Munaf Rahimo, L. Storasta, Juergen K. Steinke	2013	66
6	4.5kV press pack IGBT designed for ruggedness and reliability Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting. ·S. Eicher, Munaf Rahimo, Evgeny Tsyplakov, Daniel Schneider, A. Kopta, U. Schlapbach, E. Carroll	2004	58
7	Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability Munaf Rahimo, A. Kopta, Stefan Linder	2006	57
8	Current Sharing Behavior in Si IGBT and SiC MOSFET Cross-Switch Hybrid IEEE Electron Device Letters ·Renato Amaral Minamisawa, Umamaheswara Vemulapati, Andrei Mihăilă, Charalampos Papadopoulos, Munaf Rahimo	2016	50
9	Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes Munaf Rahimo, Kopta, Eicher, Schlapbach, Linder	2004	49
10	Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes Munaf Rahimo, A. Kopta, S. Eicher, U. Schlapbach, Stefan Linder	2004	48
11	The Field Charge Extraction (FCE) Diode A Novel Technology for Soft Recovery High Voltage Diodes Munaf Rahimo	2005	44
12	Limitation of the short-circuit ruggedness of high-voltage IGBTs A. Kopta, Munaf Rahimo, U. Schlapbach, Nando Kaminski, D. Silber	2009	44
13	A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability Munaf Rahimo, U. Schlapbach, A. Kopta, J. Vobecký, Daniel Schneider, Andreas Baschnagel	2008	41
14	Reverse blocking IGCT optimised for 1 kV DC bi‐directional solid state circuit breaker IET Power Electronics ·Umamaheswara Vemulapati, Martin Arnold, Munaf Rahimo, Antonello Antoniazzi, Davide Pessina	2015	39
15	Recent advancements in IGCT technologies for high power electronics applications Umamaheswara Vemulapati, Munaf Rahimo, Martin Arnold, Tobias Wikström, J. Vobecký, Bjorn Backlund, Thomas Stiasny	2015	38
16	The radial layout design concept for the Bi-mode insulated gate transistor L. Storasta, Munaf Rahimo, Marco Bellini, A. Kopta, Umamaheswara Vemulapati, Nando Kaminski	2011	37
17	1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints U. Schlapbach, Munaf Rahimo, C. von Arx, A. Mukhitdinov, Stefan Linder	2007	36
18	Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion Bjorn Backlund, Munaf Rahimo, Sven Klaka, J. Siefken	2009	35
19	A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT L. Storasta, Arnost Kopta, Munaf Rahimo	2010	32
20	Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV Munaf Rahimo, A. Kopta, S. Eicher, Nando Kaminski, F. Bauer, U. Schlapbach, Stefan Linder	2003	31

About Munaf Rahimo

Munaf Rahimo is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Mechanical Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 126 papers that have together received 2.0k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (121 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Electromagnetic Compatibility and Noise Suppression (31 papers), Electrostatic Discharge in Electronics (27 papers), Advanced DC-DC Converters (22 papers), Semiconductor materials and devices (21 papers), Multilevel Inverters and Converters (19 papers) and Induction Heating and Inverter Technology (15 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Condensed Matter Physics (96 citations), Mechanical Engineering (199 citations), Control and Systems Engineering (95 citations) and Electronic, Optical and Magnetic Materials (57 citations). Munaf Rahimo has collaborated with scholars based in Switzerland, United Kingdom and Denmark. Frequent co-authors include A. Kopta, U. Schlapbach, Umamaheswara Vemulapati, Stefan Linder, N.Y.A. Shammas, J. Vobecký, L. Storasta, Charalampos Papadopoulos, Renato Amaral Minamisawa and Andrei Mihăilă. Their work appears in journals such as IEEE Electron Device Letters, Microelectronics Reliability, IEEE Transactions on Electron Devices, IEEE Transactions on Power Electronics and IET Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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