Hiroshi Ishiwara
About
In The Last Decade
Hiroshi Ishiwara
387 papers receiving 7.4k citations
Peers
Comparison fields: 5 of 72
- Materials Chemistry 5.1k
- Electrical and Electronic Engineering 4.4k
- Electronic, Optical and Magnetic Materials 2.7k
- Biomedical Engineering 1.4k
- Atomic and Molecular Physics, and Optics 1.2k
Countries citing papers authored by Hiroshi Ishiwara
This map shows the geographic impact of Hiroshi Ishiwara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroshi Ishiwara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroshi Ishiwara more than expected).
Fields of papers citing papers by Hiroshi Ishiwara
This network shows the impact of papers produced by Hiroshi Ishiwara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroshi Ishiwara. The network helps show where Hiroshi Ishiwara may publish in the future.
Co-authorship network of co-authors of Hiroshi Ishiwara
This figure shows the co-authorship network connecting the top 25 collaborators of Hiroshi Ishiwara. A scholar is included among the top collaborators of Hiroshi Ishiwara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hiroshi Ishiwara. Hiroshi Ishiwara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | Adaptive-Learning Functions of Ferroelectric Field-Effect Transistors for Synaptic Device Applications | 1 |
| 2 | 141 | |
| 3 | Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors (シリコン材料・デバイス) | 2 |
| 4 | Electrical characteristics of OFETs with thin gate dielectric | 1 |
| 5 | 2 | |
| 6 | Mn置換BiFeO 3 薄膜の微構造と周波数に依存する電気特性 | 2 |
| 7 | 13 | |
| 8 | 5 | |
| 9 | 13 | |
| 10 | 53 | |
| 11 | Electrical properties of sol-gel derived BLT films on Si(100) substrates using LaAlO 3 buffer layers | 1 |
| 12 | 5 | |
| 13 | Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories) | 1 |
| 14 | A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors | 4 |
| 15 | A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors | 1 |
| 16 | Current Status and Prospects of FET-type Ferroelectric Memories | 6 |
| 17 | Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films | 1 |
| 18 | Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization | 3 |
| 19 | 7 | |
| 20 | Current Status and Prospects of Ferroelectric Thin Film Devices | 0 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.