Oliver Blank

492 total citations
14 papers, 396 citations indexed

About

Oliver Blank is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Oliver Blank has authored 14 papers receiving a total of 396 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Oliver Blank's work include Semiconductor materials and devices (12 papers), Silicon Carbide Semiconductor Technologies (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Oliver Blank is often cited by papers focused on Semiconductor materials and devices (12 papers), Silicon Carbide Semiconductor Technologies (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Oliver Blank collaborates with scholars based in Austria, Germany and United States. Oliver Blank's co-authors include H. Reisinger, Christian Schlünder, Wolfgang Heinrigs, Wolfgang Gustin, I. Eisele, M. Gutsche, Jörg Schulze, R. Stengl, Ralf Siemieniec and Michael Hutzler and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Oliver Blank

14 papers receiving 384 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Oliver Blank Austria 8 388 43 32 20 11 14 396
Victor Soler Spain 10 262 0.7× 36 0.8× 30 0.9× 33 1.6× 14 1.3× 24 287
T. Iizuka Japan 9 411 1.1× 34 0.8× 32 1.0× 14 0.7× 21 1.9× 61 424
L. Prabhu United States 10 242 0.6× 72 1.7× 28 0.9× 27 1.4× 7 0.6× 17 256
Katja Puschkarsky Germany 11 504 1.3× 19 0.4× 24 0.8× 9 0.5× 21 1.9× 19 514
Filip Schleicher Belgium 7 124 0.3× 54 1.3× 44 1.4× 35 1.8× 20 1.8× 23 170
Matthias Stecher Germany 13 391 1.0× 26 0.6× 26 0.8× 12 0.6× 14 1.3× 31 407
S. Krishnan United States 13 477 1.2× 60 1.4× 37 1.2× 16 0.8× 4 0.4× 34 499
Wolfgang Gös Austria 8 393 1.0× 64 1.5× 41 1.3× 8 0.4× 9 0.8× 15 407
Guan Huei See Singapore 11 341 0.9× 19 0.4× 32 1.0× 12 0.6× 11 1.0× 44 355
S. C. Song United States 9 268 0.7× 39 0.9× 32 1.0× 19 0.9× 3 0.3× 37 280

Countries citing papers authored by Oliver Blank

Since Specialization
Citations

This map shows the geographic impact of Oliver Blank's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Oliver Blank with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Oliver Blank more than expected).

Fields of papers citing papers by Oliver Blank

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Oliver Blank. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Oliver Blank. The network helps show where Oliver Blank may publish in the future.

Co-authorship network of co-authors of Oliver Blank

This figure shows the co-authorship network connecting the top 25 collaborators of Oliver Blank. A scholar is included among the top collaborators of Oliver Blank based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Oliver Blank. Oliver Blank is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Lee, Seung Hwan, et al.. (2023). Strain Engineering in Si Split-Gate Trench Power MOSFETs by Partial Oxidation of Polysilicon Electrodes. IEEE Transactions on Electron Devices. 70(3). 1168–1175. 5 indexed citations
3.
Blank, Oliver, et al.. (2022). Integrated sub-micron vacuum gaps in semiconductor devices. Applied Physics Letters. 121(6). 1 indexed citations
4.
Blank, Oliver, et al.. (2022). X-ray nanodiffraction analysis of residual stresses in polysilicon electrodes of vertical power transistors. Materialia. 24. 101484–101484. 5 indexed citations
5.
Blank, Oliver, et al.. (2022). Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs. Microelectronic Engineering. 264. 111870–111870. 8 indexed citations
6.
Ferrara, Alessandro, et al.. (2020). Evolution of reverse recovery in trench MOSFETs. 549–552. 9 indexed citations
7.
Siemieniec, Ralf, et al.. (2017). Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range. IET Power Electronics. 11(4). 638–645. 2 indexed citations
8.
Siemieniec, Ralf, et al.. (2015). Development of low-voltage power MOSFET based on application requirement analysis. Facta universitatis - series Electronics and Energetics. 28(3). 477–494. 5 indexed citations
9.
Siemieniec, Ralf, et al.. (2013). Robustness of MOSFET devices under hard commutation ofthe body diode. 1–10. 8 indexed citations
10.
Siemieniec, Ralf, et al.. (2011). A new power MOSFET generation designed for synchronous rectification. European Conference on Power Electronics and Applications. 1–10. 8 indexed citations
11.
Reisinger, H., Oliver Blank, Wolfgang Heinrigs, Wolfgang Gustin, & Christian Schlünder. (2007). A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models. IEEE Transactions on Device and Materials Reliability. 7(1). 119–129. 59 indexed citations
12.
Reisinger, H., et al.. (2006). Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements. 448–453. 215 indexed citations
13.
Blank, Oliver, et al.. (2005). Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor deposition. Thin Solid Films. 496(2). 240–246. 9 indexed citations
14.
Blank, Oliver, H. Reisinger, R. Stengl, et al.. (2005). A model for multistep trap-assisted tunneling in thin high-k dielectrics. Journal of Applied Physics. 97(4). 60 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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