G. Charitat

504 total citations
44 papers, 349 citations indexed

About

G. Charitat is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Condensed Matter Physics. According to data from OpenAlex, G. Charitat has authored 44 papers receiving a total of 349 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 3 papers in Control and Systems Engineering and 2 papers in Condensed Matter Physics. Recurrent topics in G. Charitat's work include Silicon Carbide Semiconductor Technologies (34 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and devices (21 papers). G. Charitat is often cited by papers focused on Silicon Carbide Semiconductor Technologies (34 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and devices (21 papers). G. Charitat collaborates with scholars based in France, United States and Slovenia. G. Charitat's co-authors include P. Rossel, A. Martínez, Daniela Dragomirescu, A. Peyre-Lavigne, Dejan Križaj, S. Amon, Marise Bafleur, A. Martı́nez, Nicolas Nolhier and Luca Bertolini and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

G. Charitat

42 papers receiving 324 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Charitat France 10 343 36 28 22 16 44 349
A.H. Montree Netherlands 7 235 0.7× 34 0.9× 24 0.9× 37 1.7× 29 1.8× 27 270
J.D. Hayden United States 9 318 0.9× 35 1.0× 29 1.0× 19 0.9× 10 0.6× 34 326
Seiji Inumiya Japan 9 286 0.8× 42 1.2× 43 1.5× 17 0.8× 27 1.7× 47 302
C Bulucea United States 10 330 1.0× 26 0.7× 67 2.4× 31 1.4× 8 0.5× 30 342
Yuan Taur United States 10 351 1.0× 74 2.1× 73 2.6× 26 1.2× 15 0.9× 13 362
P.J. Tsang United States 5 382 1.1× 19 0.5× 31 1.1× 33 1.5× 8 0.5× 13 390
P. Rossel France 12 525 1.5× 24 0.7× 82 2.9× 18 0.8× 21 1.3× 81 550
G. Chindalore United States 10 384 1.1× 36 1.0× 103 3.7× 25 1.1× 16 1.0× 17 390
Wolfgang Gös Austria 8 393 1.1× 64 1.8× 41 1.5× 13 0.6× 8 0.5× 15 407
Masakazu Shimaya Japan 9 347 1.0× 58 1.6× 37 1.3× 12 0.5× 7 0.4× 30 353

Countries citing papers authored by G. Charitat

Since Specialization
Citations

This map shows the geographic impact of G. Charitat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Charitat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Charitat more than expected).

Fields of papers citing papers by G. Charitat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Charitat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Charitat. The network helps show where G. Charitat may publish in the future.

Co-authorship network of co-authors of G. Charitat

This figure shows the co-authorship network connecting the top 25 collaborators of G. Charitat. A scholar is included among the top collaborators of G. Charitat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Charitat. G. Charitat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Charitat, G., et al.. (2005). Comparison between biased and floating guard rings used as junction termination technique. 88. 230–233. 3 indexed citations
2.
Charitat, G., et al.. (2003). Active pull-down protection for full substrate current isolation in smart power IC's. 273–276. 14 indexed citations
3.
Dragomirescu, Daniela, et al.. (2003). Novel concepts for high voltage junction termination techniques using very deep trenches. 1. 67–70. 5 indexed citations
4.
Charitat, G.. (2003). Isolation issues in smart power integrated circuits. 1. 15–22.
5.
Charitat, G., et al.. (2002). Substrate current protection in smart power IC's. 169–172. 21 indexed citations
6.
Charitat, G., et al.. (2002). 1000 and 1500 volts planar devices using field plate and semi-resistive layers: design and fabrication. edl 6. 803–806. 5 indexed citations
7.
Rossel, P., et al.. (2002). LDMOS transistor for SMART POWER circuits: modeling and design. 216–219. 10 indexed citations
8.
Charitat, G., et al.. (2002). Clamped inductive switching of LDMOST for smart power IC's. 359–362. 22 indexed citations
9.
Dragomirescu, Daniela & G. Charitat. (2002). Trench termination technique with vertical JTE for 6 kV devices. 86–89. 8 indexed citations
10.
Rossel, P., et al.. (2002). Advanced concepts in smart power integrated circuits. 1. 117–124. 2 indexed citations
11.
12.
Nolhier, Nicolas, et al.. (2002). Self-shielded high voltage SOI structures for HVICs. 1. 267–270. 4 indexed citations
13.
Dragomirescu, Daniela, G. Charitat, F. Rossel, & E. Scheid. (2002). Very high voltage planar devices using field plate and semi-resistive layers: design and fabrication. 1. 363–366. 2 indexed citations
14.
Charitat, G., et al.. (1998). Barrier Lowering Effects for Metal-Silicide Schottky Diodes at High Reverse Bias. EPE Journal. 7(3-4). 7–11.
15.
Charitat, G., et al.. (1997). A Fast And Efficient Simulation Tool For The Voltage Handling Capability Of High Voltage Devices. MRS Proceedings. 483. 6 indexed citations
16.
Charitat, G. & P. Rossel. (1993). Power devices modelling: on and off state. Microelectronics Journal. 24(1-2). 99–113. 1 indexed citations
17.
Charitat, G., et al.. (1992). A self-isolated and efficient power device for HVIC's: RESURF LDMOS with SIPOS layers. Microelectronic Engineering. 19(1-4). 149–152. 5 indexed citations
18.
Charitat, G., et al.. (1990). Improvement of the ON resistance of power VDMOS devices by surface doping: effect on the breakdown voltage. Microelectronics Journal. 21(6). 21–27. 7 indexed citations
19.
Charitat, G., et al.. (1989). High voltage RESURF LDMOS for smart power integrated circuits. Revue de Physique Appliquée. 24(10). 993–1000. 3 indexed citations
20.
Charitat, G. & A. Martı́nez. (1984). Boron segregation at Si-SiO2 interface during neutral anneals. Journal of Applied Physics. 55(8). 2869–2873. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by A.H. Montree Breakdown of academic impact, for papers by J.D. Hayden Breakdown of academic impact, for papers by Seiji Inumiya Breakdown of academic impact, for papers by C Bulucea Breakdown of academic impact, for papers by Yuan Taur Breakdown of academic impact, for papers by P.J. Tsang Breakdown of academic impact, for papers by P. Rossel Breakdown of academic impact, for papers by G. Chindalore Breakdown of academic impact, for papers by Wolfgang Gös Breakdown of academic impact, for papers by Masakazu Shimaya
Rankless by CCL
2026