Tomio Izumi

550 total citations
43 papers, 450 citations indexed

About

Tomio Izumi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, Tomio Izumi has authored 43 papers receiving a total of 450 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 11 papers in Mechanics of Materials. Recurrent topics in Tomio Izumi's work include Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (14 papers) and Diamond and Carbon-based Materials Research (11 papers). Tomio Izumi is often cited by papers focused on Semiconductor materials and devices (24 papers), Thin-Film Transistor Technologies (14 papers) and Diamond and Carbon-based Materials Research (11 papers). Tomio Izumi collaborates with scholars based in Japan, United Kingdom and China. Tomio Izumi's co-authors include Yoshiyuki Show, Yunosuke Makita, Takashi Hirao, Toshio Nomura, Kazuhiro Kudo, Masatoshi Kitagawa, Hiroshi Morisaki, Kiyotaka Wasa, Kentaro Setsune and Takeshi Kamada and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Tomio Izumi

41 papers receiving 405 citations

Peers

Tomio Izumi
R. Bisaro France
H. Oppolzer Germany
E. Garfunkel United States
B. Wacker United States
Teh Y. Tan United States
D. Bahnck United States
Nicole Herbots United States
R. Bisaro France
Tomio Izumi
Citations per year, relative to Tomio Izumi Tomio Izumi (= 1×) peers R. Bisaro

Countries citing papers authored by Tomio Izumi

Since Specialization
Citations

This map shows the geographic impact of Tomio Izumi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomio Izumi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomio Izumi more than expected).

Fields of papers citing papers by Tomio Izumi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomio Izumi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomio Izumi. The network helps show where Tomio Izumi may publish in the future.

Co-authorship network of co-authors of Tomio Izumi

This figure shows the co-authorship network connecting the top 25 collaborators of Tomio Izumi. A scholar is included among the top collaborators of Tomio Izumi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tomio Izumi. Tomio Izumi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sato, Keisuke, Kenji Hirakuri, & Tomio Izumi. (2005). Significant Improvement of Luminance and Stability of a Red Electroluminescent Device Using Nanocrystalline Silicon. Journal of Nanoscience and Nanotechnology. 5(5). 738–741. 4 indexed citations
2.
Sato, Keisuke, et al.. (2005). Fabrication of Highly Efficient Full-color Electroluminescent Device Composed of Nanocrystalline Silicon. Journal of Nanoscience and Nanotechnology. 5(2). 271–276. 9 indexed citations
3.
Kobayashi, Takeshi, et al.. (2003). Evaluation of Semiconductor Thin-Films through Thermal Conductivity by Photoacoustic Method. Netsu Bussei. 17(4). 270–275. 2 indexed citations
4.
Sato, Keisuke, Tomio Izumi, Yoshiyuki Show, et al.. (2003). Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR. Applied Surface Science. 216(1-4). 376–381. 47 indexed citations
5.
Izumi, Tomio, et al.. (2002). Delamination of Si by high dose H-ion implantation through thin SiO2 film (ESR characterization). Materials Science and Engineering B. 91-92. 160–163.
6.
Kobayashi, Takeshi, et al.. (2002). Photoacoustic evaluation of defects and thermal conductivity in the surface layer of ion implanted semiconductors. Materials Science and Engineering B. 91-92. 186–188. 2 indexed citations
7.
Show, Yoshiyuki, et al.. (2001). Effects of defects introduced by nitrogen doping on electron emission from diamond films. Materials Chemistry and Physics. 72(2). 201–203. 2 indexed citations
8.
Izumi, Tomio, et al.. (2000). ESR characterization of the top Si layer of ion implanted SIMOX. Applied Surface Science. 159-160. 231–236. 2 indexed citations
9.
Show, Yoshiyuki, et al.. (2000). Structural changes in CVD diamond film by boron and nitrogen doping. Diamond and Related Materials. 9(3-6). 337–340. 7 indexed citations
10.
Izumi, Tomio, et al.. (1998). Distribution of Paramagnetic Defects in 3C-SiC Epitaxial Films Grown by LPCVD Method with Alternate Gas Supply. Materials science forum. 264-268. 619–622.
11.
Show, Yoshiyuki, et al.. (1998). Influence of defects on electron emission from diamond films. Journal of Applied Physics. 84(11). 6351–6354. 32 indexed citations
12.
Show, Yoshiyuki, Tomio Izumi, Masahiro Deguchi, et al.. (1997). Defects in ion implanted diamond films (ESR study). Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 127-128. 217–220. 1 indexed citations
13.
Show, Yoshiyuki, et al.. (1996). Correlation between light emission and dangling bonds in porous silicon. Applied Surface Science. 92. 617–620. 11 indexed citations
14.
Mori, Yusuke, Yoshiyuki Show, Masahiro Deguchi, et al.. (1993). Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition. Japanese Journal of Applied Physics. 32(7B). L987–L987. 29 indexed citations
15.
Izumi, Tomio, Yoshiyuki Show, Mikio Deguchi, et al.. (1993). Electron spin resonance study of diamond-like nuclei produced in an Si surface layer by high dose C ion doping. Thin Solid Films. 228(1-2). 285–288. 3 indexed citations
16.
Kamada, Takeshi, Takashi Hirao, Masatoshi Kitagawa, et al.. (1988). Annealing behavior of silicon nitride and silicon oxynitride films prepared by ECR plasma CVD method. Applied Surface Science. 33-34. 1094–1100. 2 indexed citations
17.
Hirao, Takashi, Kentaro Setsune, Masatoshi Kitagawa, et al.. (1988). Properties of Silicon Oxynitride Films Prepared by ECR Plasma CVD Method. Japanese Journal of Applied Physics. 27(1A). L21–L21. 15 indexed citations
18.
Makita, Yunosuke, Kazuhiro Kudo, Toshio Nomura, et al.. (1987). Photoluminescence of strongly compensated GaAs dually implanted by Se+ (donor) and Zn+ (acceptor) ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 19-20. 403–407. 4 indexed citations
19.
Kudo, Kazuhiro, Yunosuke Makita, Toshio Nomura, et al.. (1986). Photoluminescence of Si-doped AlAs grown by molecular-beam epitaxy. Journal of Applied Physics. 60(9). 3371–3373. 7 indexed citations
20.
Makita, Yunosuke, et al.. (1985). New emission lines in highly carbon ion-implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 7-8. 433–437. 21 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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