B. Wacker

880 total citations
9 papers, 743 citations indexed

About

B. Wacker is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, B. Wacker has authored 9 papers receiving a total of 743 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 2 papers in Computational Mechanics. Recurrent topics in B. Wacker's work include Thin-Film Transistor Technologies (8 papers), Silicon Nanostructures and Photoluminescence (5 papers) and Semiconductor materials and devices (4 papers). B. Wacker is often cited by papers focused on Thin-Film Transistor Technologies (8 papers), Silicon Nanostructures and Photoluminescence (5 papers) and Semiconductor materials and devices (4 papers). B. Wacker collaborates with scholars based in United States. B. Wacker's co-authors include C. C. Tsai, G. B. Anderson, R. Thompson, J. C. Knights, Donald L. Smith, Andrew S. Alimonda, Steven Ready, M. J. Thompson, C. Doland and W. B. Jackson and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

B. Wacker

9 papers receiving 697 citations

Peers

B. Wacker

EEE

MC

MM

BE

AMPO

Satish D. Athavale United States

Andrew S. Alimonda United States

Toshiharu Minamikawa Japan

Y. Ohmura Japan

C. Beneking Germany

Masatoshi Wakagi Japan

Shashank C. Deshmukh United States

Paihung Pan United States

Tomio Izumi Japan

J. Zesch United States

Satish D. Athavale United States

B. Wacker

400 ×0.6

EEE

291 ×0.5

MC

91 ×1.4

MM

66 ×1.0

BE

30 ×0.6

AMPO

Citations per year, relative to B. Wacker B. Wacker (= 1×) peers Satish D. Athavale

Countries citing papers authored by B. Wacker

Since Specialization

Citations

This map shows the geographic impact of B. Wacker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Wacker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Wacker more than expected).

Fields of papers citing papers by B. Wacker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Wacker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Wacker. The network helps show where B. Wacker may publish in the future.

Co-authorship network of co-authors of B. Wacker

This figure shows the co-authorship network connecting the top 25 collaborators of B. Wacker. A scholar is included among the top collaborators of B. Wacker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Wacker. B. Wacker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

9 of 9 papers shown

1.

Smith, Donald L., et al.. (1990). Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma. Journal of The Electrochemical Society. 137(2). 614–623. 212 indexed citations

2.

Tsai, C. C., G. B. Anderson, R. Thompson, & B. Wacker. (1989). Control of silicon network structure in plasma deposition. Journal of Non-Crystalline Solids. 114. 151–153. 206 indexed citations

3.

Tsai, C. C., G. B. Anderson, B. Wacker, R. Thompson, & C. Doland. (1989). Temperature Dependence of Structure, Transport and Growth of Microcrystalline Silicon: Does Grain Size Correlate with Transport?. MRS Proceedings. 149. 8 indexed citations

4.

Smith, Donald L., et al.. (1988). Plasma Chemistry Control of Silicon Nitride Deposition. MRS Proceedings. 118. 7 indexed citations

5.

Tsai, C. C., R. Thompson, C. Doland, et al.. (1988). Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth. MRS Proceedings. 118. 49 indexed citations

6.

Tsai, C. C., J. G. Shaw, B. Wacker, & J. C. Knights. (1987). Film Growth Mechanisms of Amorphous Silicon in Diode and Triode Glow Discharge Systems. MRS Proceedings. 95. 6 indexed citations

7.

Jackson, W. B., R. J. Nemanich, M. J. Thompson, & B. Wacker. (1986). Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling. Physical review. B, Condensed matter. 33(10). 6936–6945. 36 indexed citations

8.

Tsai, C. C., et al.. (1986). Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon. Journal of Applied Physics. 59(8). 2998–3001. 192 indexed citations

9.

Tsai, C. C., J. C. Knights, R. Lujan, et al.. (1983). Amorphous Si prepared in a UHV plasma deposition system. Journal of Non-Crystalline Solids. 59-60. 731–734. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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