U. Kwon

590 total citations
21 papers, 193 citations indexed

About

U. Kwon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, U. Kwon has authored 21 papers receiving a total of 193 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in U. Kwon's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Magnetic properties of thin films (8 papers). U. Kwon is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Magnetic properties of thin films (8 papers). U. Kwon collaborates with scholars based in United States, South Korea and Switzerland. U. Kwon's co-authors include G. Bertero, S. S. Malhotra, E. Vélu, Vijay Narayanan, Robert Sinclair, H. S. Jung, R. K. Pandey, K. V. R. M. Murali, Siddarth Krishnan and Mao‐Kuen Kuo and has published in prestigious journals such as Journal of Applied Physics, Journal of Magnetism and Magnetic Materials and Materials Chemistry and Physics.

In The Last Decade

U. Kwon

20 papers receiving 182 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
U. Kwon United States 9 121 87 59 34 23 21 193
E. Luckowski United States 9 309 2.6× 164 1.9× 31 0.5× 47 1.4× 19 0.8× 23 324
Akihiro Otsuki Japan 9 262 2.2× 95 1.1× 52 0.9× 16 0.5× 7 0.3× 12 311
B. Sell Germany 8 183 1.5× 26 0.3× 56 0.9× 36 1.1× 28 1.2× 17 233
H. Ono Japan 6 285 2.4× 44 0.5× 74 1.3× 52 1.5× 10 0.4× 15 304
Anyan Du China 8 179 1.5× 59 0.7× 34 0.6× 70 2.1× 41 1.8× 36 213
C. S. Chang Taiwan 5 86 0.7× 65 0.7× 27 0.5× 52 1.5× 30 1.3× 15 150
L. Prabhu United States 10 242 2.0× 28 0.3× 27 0.5× 72 2.1× 15 0.7× 17 256
Filip Schleicher Belgium 7 124 1.0× 44 0.5× 35 0.6× 54 1.6× 9 0.4× 23 170
Keiko Fujihira Japan 11 349 2.9× 74 0.9× 66 1.1× 30 0.9× 9 0.4× 24 358
Takamitsu Kawahara Japan 11 430 3.6× 69 0.8× 151 2.6× 36 1.1× 14 0.6× 22 442

Countries citing papers authored by U. Kwon

Since Specialization
Citations

This map shows the geographic impact of U. Kwon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Kwon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Kwon more than expected).

Fields of papers citing papers by U. Kwon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Kwon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Kwon. The network helps show where U. Kwon may publish in the future.

Co-authorship network of co-authors of U. Kwon

This figure shows the co-authorship network connecting the top 25 collaborators of U. Kwon. A scholar is included among the top collaborators of U. Kwon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Kwon. U. Kwon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Linder, B.P., Takashi Ando, E. Cartier, et al.. (2016). Process optimizations for NBTI/PBTI for future replacement metal gate technologies. 12 indexed citations
3.
Johnson, G., et al.. (2016). Electron Beam Induced Resistance Change for Device Characterization and Defect Localization. Proceedings - International Symposium for Testing and Failure Analysis. 81368. 112–117. 6 indexed citations
4.
Miao, Xin, Ruqiang Bao, U. Kwon, et al.. (2015). An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS. IEEE Electron Device Letters. 36(4). 384–386. 8 indexed citations
5.
Bao, Ruqiang, B. Greene, U. Kwon, et al.. (2015). Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility. 1 indexed citations
6.
Ando, Takashi, Balaji Kannan, U. Kwon, et al.. (2014). Simple Gate Metal Anneal (SIGMA) stack for FinFET Replacement Metal Gate toward 14nm and beyond. 23. 1–2. 12 indexed citations
7.
Chudzik, M., Sitaraman Krishnan, Min Dai, et al.. (2014). (Keynote) Atomic Layer Deposition Trends and Challenges in High-k/Metal Gate and Alternative Channel CMOS Processing. ECS Transactions. 60(1). 513–518. 6 indexed citations
8.
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10.
Economikos, Laertis, et al.. (2013). Al CMP for Low Resistance Gate Fill for 20nm and Beyond Replacement Metal Gate. MRS Proceedings. 1560. 3 indexed citations
11.
Krishnan, Siddarth, Vijay Narayanan, E. Cartier, et al.. (2012). Bias temperature instability in High-κ/metal gate transistors - Gate stack scaling trends. 5A.1.1–5A.1.6. 18 indexed citations
12.
Dai, Min, Jinping Liu, Dechao Guo, et al.. (2011). A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology. 86. 28.5.1–28.5.4. 6 indexed citations
13.
Ando, Takashi, et al.. (2011). Mechanism of VFB/VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(2). 3 indexed citations
14.
Jung, H. S., E. Vélu, S. S. Malhotra, G. Bertero, & U. Kwon. (2008). Comparison of media properties between hard/soft stacked composite and capping layer perpendicular recording media. Journal of Magnetism and Magnetic Materials. 320(22). 3151–3156. 6 indexed citations
15.
Kwon, U., et al.. (2008). Full 3D string-level simulation of NAND flash device. 37–40.
16.
Jung, H. S., U. Kwon, Mao‐Kuen Kuo, et al.. (2007). Effect of Oxygen Incorporation on Microstructure and Media Performance in CoCrPt–SiO$_{2}$ Perpendicular Recording Media. IEEE Transactions on Magnetics. 43(2). 615–620. 19 indexed citations
17.
Kwon, U., H. S. Jung, Mao‐Kuen Kuo, et al.. (2006). Effect of Magnetic Recording Layer Thickness on Media Performance in CoCrPtO Perpendicular Media. 97. 10–10. 5 indexed citations
18.
Kwon, U., H. S. Jung, Mao‐Kuen Kuo, et al.. (2006). Effect of Magnetic Recording Layer Thickness on Media Performance in CoCrPt-Oxide Perpendicular Media. IEEE Transactions on Magnetics. 42(10). 2330–2332. 5 indexed citations
19.
Kwon, U., Robert Sinclair, E. Vélu, S. S. Malhotra, & G. Bertero. (2005). Ru/Ru-oxide interlayers for CoCrPtO perpendicular recording media. IEEE Transactions on Magnetics. 41(10). 3193–3195. 32 indexed citations
20.
Kwon, U., et al.. (2003). Transmission electron microscopy analysis of computer hard disc, magnetic thin films. Materials Chemistry and Physics. 81(2-3). 241–243. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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