W. H. Rowland

822 total citations
13 papers, 719 citations indexed

About

W. H. Rowland is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W. H. Rowland has authored 13 papers receiving a total of 719 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 7 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W. H. Rowland's work include GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (7 papers) and Semiconductor materials and devices (4 papers). W. H. Rowland is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Ga2O3 and related materials (7 papers) and Semiconductor materials and devices (4 papers). W. H. Rowland collaborates with scholars based in United States, United Kingdom and China. W. H. Rowland's co-authors include W. C. Hughes, Mark A. Johnson, Shizυo Fujita, J. W. Cook, J. F. Schetzina, J. A. Edmond, James Cook, N. A. El-Masry, David McNulty and N.H. Karam and has published in prestigious journals such as Applied Physics Letters, Journal of Crystal Growth and Electronics Letters.

In The Last Decade

W. H. Rowland

13 papers receiving 704 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. H. Rowland United States 10 489 447 379 319 134 13 719
T. Boufaden Tunisia 14 348 0.7× 514 1.1× 303 0.8× 232 0.7× 104 0.8× 37 578
S. K. Lee South Korea 10 241 0.5× 504 1.1× 270 0.7× 251 0.8× 144 1.1× 13 552
M. Palczewska Poland 13 522 1.1× 375 0.8× 361 1.0× 180 0.6× 166 1.2× 34 656
Masaharu Aoki Japan 8 360 0.7× 579 1.3× 401 1.1× 268 0.8× 196 1.5× 13 722
Takuji Okahisa Japan 7 301 0.6× 644 1.4× 335 0.9× 249 0.8× 223 1.7× 8 686
K. Y. Lim South Korea 13 268 0.5× 417 0.9× 252 0.7× 216 0.7× 146 1.1× 44 555
S. M. Donovan United States 13 158 0.3× 453 1.0× 174 0.5× 367 1.2× 100 0.7× 38 551
A. P. Zhang United States 11 155 0.3× 620 1.4× 254 0.7× 484 1.5× 182 1.4× 12 674
A. Usui Japan 11 334 0.7× 644 1.4× 365 1.0× 334 1.0× 184 1.4× 24 745
J. A. Freitas United States 13 437 0.9× 795 1.8× 449 1.2× 362 1.1× 267 2.0× 25 909

Countries citing papers authored by W. H. Rowland

Since Specialization
Citations

This map shows the geographic impact of W. H. Rowland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. H. Rowland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. H. Rowland more than expected).

Fields of papers citing papers by W. H. Rowland

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. H. Rowland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. H. Rowland. The network helps show where W. H. Rowland may publish in the future.

Co-authorship network of co-authors of W. H. Rowland

This figure shows the co-authorship network connecting the top 25 collaborators of W. H. Rowland. A scholar is included among the top collaborators of W. H. Rowland based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. H. Rowland. W. H. Rowland is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
Johnson, Mark A., W. C. Hughes, W. H. Rowland, et al.. (1997). Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy. Journal of Crystal Growth. 175-176. 72–78. 35 indexed citations
2.
Johnson, Mark A., Shizυo Fujita, W. H. Rowland, et al.. (1997). MBE growth and properties of GaN on GaN/SiC substrates. Solid-State Electronics. 41(2). 213–218. 17 indexed citations
3.
Johnson, Mark A., et al.. (1996). MBE growth and properties of ZnO on sapphire and SiC substrates. Journal of Electronic Materials. 25(5). 855–862. 171 indexed citations
4.
Johnson, Mark A., Zhonghai Yu, C. Boney, et al.. (1996). MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple RF Plasma Sources. MRS Proceedings. 449. 7 indexed citations
5.
Johnson, Mark A., Shizυo Fujita, W. H. Rowland, et al.. (1996). Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2349–2353. 52 indexed citations
6.
Boney, C., Yu Zhang, W. H. Rowland, et al.. (1996). II–VI blue/green laser diodes on ZnSe substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2259–2262. 29 indexed citations
7.
Johnson, Mark A., Shizυo Fujita, W. H. Rowland, et al.. (1996). MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates. Journal of Electronic Materials. 25(5). 793–797. 12 indexed citations
8.
Eason, D. B., C. Boney, Jing Ren, et al.. (1995). High-brightness II–VI light-emitting diodes grown by molecular-beam epitaxy on ZnSe substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 711–715. 12 indexed citations
9.
Karam, N.H., P. C. Colter, David McNulty, et al.. (1995). Growth of device quality GaN at 550 °C by atomic layer epitaxy. Applied Physics Letters. 67(1). 94–96. 57 indexed citations
10.
Johnson, Mark A., Shizυo Fujita, W. H. Rowland, et al.. (1995). MBE Growth and Properties of ZnO on Sapphire and SiC Substrates. 156 indexed citations
11.
Hughes, W. C., W. H. Rowland, Mark A. Johnson, J. W. Cook, & J. F. Schetzina. (1995). Reactive Ion Etching of AlN, AlGaN, and GaN Using BCl3. MRS Proceedings. 395. 3 indexed citations
12.
Hughes, W. C., W. H. Rowland, Mark A. Johnson, et al.. (1995). Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(4). 1571–1577. 162 indexed citations
13.
Yu, Zhongliang, C. Boney, W. C. Hughes, et al.. (1995). Blue-green laser diodes on ZnSe substrates. Electronics Letters. 31(16). 1341–1342. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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