L. Dmowski

1.2k citations

82 papers · 853 indexed · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces

Papers in ⓘ

Atomic and Molecular Physics, and Optics 63
- Semiconductor Quantum Structures and Devices 56
- Quantum and electron transport phenomena 37
Electrical and Electronic Engineering 48
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 17
- Advanced Semiconductor Detectors and Materials 6

Co-authors: T. Suski (35 shared papers)M. Baj (15 shared papers)J.C. Portal (16 shared papers)E. Litwin‐Staszewska (16 shared papers)R. Piotrzkowski (10 shared papers)P. Wiśniewski (14 shared papers)L. Eaves (8 shared papers)Manijeh Razeghi (7 shared papers)
Journals: Journal of Applied Physics (13 papers)physica status solidi (b) (11 papers)Applied Physics Letters (8 papers)Semiconductor Science and Technology (8 papers)Physical review. B, Condensed matter (5 papers)
Partner nations: Poland France United States

In The Last Decade

L. Dmowski

79 papers receiving 810 citations

Peers

Countries citing papers authored by L. Dmowski

Since Specialization

Citations

This map shows the geographic impact of L. Dmowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Dmowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Dmowski more than expected).

Fields of papers citing papers by L. Dmowski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Dmowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Dmowski. The network helps show where L. Dmowski may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Dmowski, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Dmowski Line = papers co-authored together L. Dmowski links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 82 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Investigation of theDXcenter in heavily dopedn-GaAs Physical Review Letters ·D. K. Maude, J.C. Portal, L. Dmowski, Tim Foster, L. Eaves, M. I. Nathan, M. Heiblum, J. J. Harris, R B Beall	1987	120
2	Structural and magnetic phase transitions in CoxNi1−xMnGe system under pressure Journal of Magnetism and Magnetic Materials ·S. Nizioł, Andrzej Zięba, R. Zach, M. Baj, L. Dmowski	1983	60
3	High pressure andDXcenters in heavily doped bulk GaAs Physical review. B, Condensed matter ·T. Suski, R. Piotrzkowski, P. Wiśniewski, E. Litwin‐Staszewska, L. Dmowski	1989	36
4	First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands Applied Physics Letters ·Manijeh Razeghi, J.P. Duchemin, J.C. Portal, L. Dmowski, G. Remeni, R. J. Nicholas, A. Briggs	1986	34
5	Electronic structure and effective masses of InN under pressure Journal of Applied Physics ·I. Gorczyca, J. Plesiewicz, L. Dmowski, T. Suski, N. E. Christensen, A. Svane, C. S. Gallinat, Gregor Koblmüller, James S. Speck	2008	30
6	First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition Applied Physics Letters ·Manijeh Razeghi, P. Maurel, F. Omnès, S. Ben Armor, L. Dmowski, J. C. Portal	1986	29
7	Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy Applied Physics Letters ·T. Suski, E. Litwin‐Staszewska, R. Piotrzkowski, R. Czernecki, M. Kryśko, Szymon Grzanka, G. Nowak, G. Franssen, L. Dmowski, M. Leszczyński, P. Perlin, B. Łucznik, I. Grzegory, R. Jakieła	2008	29
8	Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior Journal of Applied Physics ·L. Dmowski, M. Baj, T. Suski, J. Przybytek, R. Czernecki, Xinqiang Wang, A. Yoshikawa, Hai Lu, W. J. Schaff, Daisuke Muto, Yasushi Nanishi	2009	24
9	Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement Scientific Reports ·Linna Guo, Xinqiang Wang, X. T. Zheng, Xuelin Yang, Fujun Xu, Ning Tang, Lu Lu, Weikun Ge, Bo Shen, L. Dmowski, T. Suski	2014	22
10	Direct proof of two-electron occupation of Ge-DXcenters in GaAs codoped with Ge and Te Physical Review Letters ·M. Baj, L. Dmowski, T. Słupiński	1993	21
11	A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure Journal of Physics C Solid State Physics ·G. Grégoris, J. Beerens, S. Ben Amor, L. Dmowski, J.C. Portal, D.L. Sivco, A Y Cho	1987	19
12	Capture and emission of electrons by the resonant state strongly coupled to the lattice inn-InSb Physical review. B, Condensed matter ·L. Dmowski, M. Baj, P. Ioannides, R. Piotrzkowski	1982	18
13	Appearance and destruction of spatial correlation of DX charges in GaAs Semiconductor Science and Technology ·Ż. Wilamowski, J. Kossut, T. Suski, P. Wiśniewski, L. Dmowski	1991	18
14	Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions Journal of Applied Physics ·S. Ben Amor, L. Dmowski, J. C. Portal, N. J. Pulsford, R. J. Nicholas, John Singleton, Manijeh Razeghi	1989	17
15	Resonant localized donor state above the conduction band minimum in InN Applied Physics Letters ·L. Dmowski, J. Plesiewicz, T. Suski, H. J. Lü, W. J. Schaff, M. Kurouchi, Yasushi Nanishi, L. Kończewicz, V. Cimalla, O. Ambacher	2005	16
16	A new explanation of the Cl donor deionization and its kinetics observed in CdTe: Cl under hydrostatic pressure physica status solidi (a) ·M. Baj, L. Dmowski, M. Kończykowski, S. Porowski	1976	14
17	Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates Journal of Applied Physics ·T. Suski, G. Staszczak, Szymon Grzanka, R. Czernecki, E. Litwin‐Staszewska, R. Piotrzkowski, L. Dmowski, A. Khachapuridze, M. Kryśko, P. Perlin, I. Grzegory	2010	14
18	Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies Applied Physics Letters ·G. Franssen, T. Suski, P. Perlin, H. Teisseyre, A. Khachapuridze, L. Dmowski, J. Plesiewicz, Agata Kamińska, M. Kurouchi, Yasushi Nanishi, H. J. Lü, W. J. Schaff	2006	14
19	Bulk GaN crystals grown at high pressure as substrates for blue-laser technology physica status solidi (a) ·R. Czernetzki, M. Leszczyński, I. Grzegory, P. Perlin, P. Prystawko, C. Skierbiszewski, M. Kryśko, M. Sarzyński, P. Wiśniewski, G. Nowak, Adam Libura, Szymon Grzanka, T. Suski, L. Dmowski, E. Litwin‐Staszewska, Michał Boćkowski, S. Porowski	2003	13
20	Spatial correlations of remote impurity charges: Mechanism responsible for the high mobility of a two-dimensional electron gas Physical review. B, Condensed matter ·T. Suski, P. Wiśniewski, I. Gorczyca, L. Dmowski, R. Piotrzkowski, Paweł Sobkowicz, J. Smoliner, E. Gornik, G. Böhm, G. Weimann	1994	13

About L. Dmowski

L. Dmowski is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 82 papers that have together received 853 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (56 papers), Quantum and electron transport phenomena (37 papers), GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Ga2O3 and related materials (8 papers), Advanced Semiconductor Detectors and Materials (6 papers) and ZnO doping and properties (6 papers). The work is most often cited by research in Condensed Matter Physics (322 citations), Atomic and Molecular Physics, and Optics (600 citations), Electronic, Optical and Magnetic Materials (182 citations), Electrical and Electronic Engineering (392 citations) and Materials Chemistry (256 citations). L. Dmowski has collaborated with scholars based in Poland, France and United States. Frequent co-authors include T. Suski, M. Baj, J.C. Portal, E. Litwin‐Staszewska, R. Piotrzkowski, P. Wiśniewski, L. Eaves, Manijeh Razeghi, J. J. Harris and R B Beall. Their work appears in journals such as Journal of Applied Physics, physica status solidi (b), Applied Physics Letters, Semiconductor Science and Technology and Physical review. B, Condensed matter.

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