Jung‐Hui Tsai

410 total citations
44 papers, 221 citations indexed

About

Jung‐Hui Tsai is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jung‐Hui Tsai has authored 44 papers receiving a total of 221 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jung‐Hui Tsai's work include GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (16 papers). Jung‐Hui Tsai is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (16 papers) and Ga2O3 and related materials (16 papers). Jung‐Hui Tsai collaborates with scholars based in Taiwan, China and United States. Jung‐Hui Tsai's co-authors include Wen-Chau Liu, Jing-Shiuan Niu, I-Ping Liu, Jian-Kai Liou, Wei-Chou Hsu, Wei‐Cheng Chen, Shiou‐Ying Cheng, Po-Cheng Chou, Chun-Chia Chen and Kun‐Wei Lin and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Sensors and Actuators B Chemical.

In The Last Decade

Jung‐Hui Tsai

42 papers receiving 219 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jung‐Hui Tsai Taiwan 9 156 91 86 61 60 44 221
S. Petitdidier France 9 138 0.9× 80 0.9× 25 0.3× 24 0.4× 38 0.6× 34 198
Arnaud Curutchet France 6 316 2.0× 65 0.7× 121 1.4× 40 0.7× 56 0.9× 13 362
T. Donchev Bulgaria 7 138 0.9× 136 1.5× 98 1.1× 92 1.5× 21 0.3× 42 257
R. Winter Israel 12 319 2.0× 151 1.7× 53 0.6× 37 0.6× 77 1.3× 21 370
P. Reichel Germany 8 104 0.7× 57 0.6× 52 0.6× 81 1.3× 17 0.3× 9 185
Rongdun Hong China 11 173 1.1× 156 1.7× 55 0.6× 132 2.2× 28 0.5× 40 288
Yacine Halfaya France 11 206 1.3× 174 1.9× 162 1.9× 80 1.3× 18 0.3× 19 339
O. Trithaveesak Germany 7 125 0.8× 223 2.5× 133 1.5× 165 2.7× 35 0.6× 13 361
O. Lopatiuk United States 9 194 1.2× 270 3.0× 105 1.2× 183 3.0× 29 0.5× 15 346
C. Mauro Italy 9 222 1.4× 150 1.6× 39 0.5× 50 0.8× 62 1.0× 21 326

Countries citing papers authored by Jung‐Hui Tsai

Since Specialization
Citations

This map shows the geographic impact of Jung‐Hui Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jung‐Hui Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jung‐Hui Tsai more than expected).

Fields of papers citing papers by Jung‐Hui Tsai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jung‐Hui Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jung‐Hui Tsai. The network helps show where Jung‐Hui Tsai may publish in the future.

Co-authorship network of co-authors of Jung‐Hui Tsai

This figure shows the co-authorship network connecting the top 25 collaborators of Jung‐Hui Tsai. A scholar is included among the top collaborators of Jung‐Hui Tsai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jung‐Hui Tsai. Jung‐Hui Tsai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsai, Jung‐Hui, et al.. (2023). Performance of Pt/Ga2O3/GaN Schottky-diode ammonia sensor covered with thermally evaporated Pt nanoparticles. Sensors and Actuators B Chemical. 402. 135108–135108. 4 indexed citations
2.
Niu, Jing-Shiuan, et al.. (2023). Comprehensive Study of Hydrogen Gas Sensing Performance of an Amorphous In-Al-Zn-O (a-IAZO) Thin Film Synthesized With Pd Nanoparticles. IEEE Transactions on Electron Devices. 70(9). 4837–4842. 2 indexed citations
3.
Niu, Jing-Shiuan, et al.. (2022). Pd Nanoparticle/Pd/Al 2 O 3 Resistive Sensor for Hydrogen Detection in a High-Temperature Environment. ECS Journal of Solid State Science and Technology. 11(6). 67003–67003. 1 indexed citations
4.
Niu, Jing-Shiuan, et al.. (2022). Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO 2 ) Layers. ECS Journal of Solid State Science and Technology. 11(7). 75003–75003. 2 indexed citations
5.
Niu, Jing-Shiuan, Chia‐Wei Chang, Jung‐Hui Tsai, et al.. (2022). Hydrogen detecting characteristics and an improved algorithm for data transmission of a palladium nanoparticle/amorphous InGaZnO thin film based sensor. Sensors and Actuators B Chemical. 377. 133091–133091. 7 indexed citations
6.
Tsai, Jung‐Hui, et al.. (2022). Characteristics of chemiresistive-type ammonia sensor based on Ga2O3 thin film functionalized with platinum nanoparticles. Sensors and Actuators B Chemical. 371. 132589–132589. 16 indexed citations
7.
Niu, Jing-Shiuan, et al.. (2021). Study of a Formaldehyde Gas Sensor Based on a Sputtered Vanadium Pentoxide Thin Film Decorated with Gold Nanoparticles. ECS Journal of Solid State Science and Technology. 10(8). 87001–87001. 8 indexed citations
8.
Niu, Jing-Shiuan, et al.. (2021). Comparative Study of AlGaN/AlN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Ni/Au Gate Electrode. ECS Journal of Solid State Science and Technology. 10(10). 105001–105001. 1 indexed citations
9.
Chang, Ching-Hong, et al.. (2021). High-Performance AlGaN/GaN Enhancement-Mode High Electron Mobility Transistor by Two-Step Gate Recess and Electroless-Plating Approaches. Science of Advanced Materials. 13(1). 30–35. 6 indexed citations
10.
Niu, Jing-Shiuan, et al.. (2021). Study of a Highly Sensitive Formaldehyde Sensor Prepared With a Tungsten Trioxide Thin Film and Gold Nanoparticles. IEEE Transactions on Electron Devices. 68(12). 6422–6429. 7 indexed citations
11.
Tsai, Jung‐Hui, et al.. (2020). Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers. ECS Journal of Solid State Science and Technology. 9(5). 55019–55019. 3 indexed citations
12.
Tsai, Jung‐Hui, et al.. (2017). An Improved GaN-Based Light-Emitting Diode with a SiO2Current Blocking Layer Embedded in Stair-Like AZO Transparent Structure. ECS Journal of Solid State Science and Technology. 6(10). R149–R153. 1 indexed citations
13.
Tsai, Jung‐Hui, et al.. (2017). Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes. Superlattices and Microstructures. 110. 171–179. 2 indexed citations
14.
Liou, Jian-Kai, et al.. (2015). Enhanced Light Extraction of a High-Power GaN-Based Light-Emitting Diode With a Nanohemispherical Hybrid Backside Reflector. IEEE Transactions on Electron Devices. 62(10). 3296–3301. 12 indexed citations
15.
Chang, Chung‐Cheng, et al.. (2013). MOS solar cells with oxides deposited by sol-gel spin-coating techniques. Semiconductors. 47(6). 835–837. 2 indexed citations
16.
17.
Hsu, Meng-Kai, et al.. (2007). Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment. Journal of The Electrochemical Society. 154(7). H552–H552. 9 indexed citations
18.
Peng, Y.K.M., P.J. Fogarty, T. Burgess, et al.. (2005). Spherical Tokamak Plasma Science and Fusion Energy Component Testing. IEEJ Transactions on Fundamentals and Materials. 125(11). 857–867. 1 indexed citations
19.
Tsai, Jung‐Hui, et al.. (2005). Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch. Semiconductor Science and Technology. 20(2). 152–157. 1 indexed citations
20.
Tsai, Jung‐Hui, et al.. (1996). On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs). Solid-State Electronics. 39(12). 1723–1730. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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