Hideto Sugawara

1.0k total citations
25 papers, 787 citations indexed

About

Hideto Sugawara is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Hideto Sugawara has authored 25 papers receiving a total of 787 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Atomic and Molecular Physics, and Optics, 21 papers in Electrical and Electronic Engineering and 11 papers in Condensed Matter Physics. Recurrent topics in Hideto Sugawara's work include Semiconductor Quantum Structures and Devices (20 papers), GaN-based semiconductor devices and materials (11 papers) and Semiconductor Lasers and Optical Devices (10 papers). Hideto Sugawara is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), GaN-based semiconductor devices and materials (11 papers) and Semiconductor Lasers and Optical Devices (10 papers). Hideto Sugawara collaborates with scholars based in Japan. Hideto Sugawara's co-authors include G. Hatakoshi, T. Nakanisi, Yasuo Ohba, Masayuki Ishikawa, M. Yamamoto, Kazuhiko Itaya, Masayuki Ishikawa, Yukie Nishikawa, H. Nozaki and Yoshihiro Kokubun and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and International Journal of Biological Macromolecules.

In The Last Decade

Hideto Sugawara

24 papers receiving 746 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hideto Sugawara Japan 12 646 636 321 171 61 25 787
P. Krispin Germany 12 585 0.9× 628 1.0× 299 0.9× 115 0.7× 62 1.0× 52 726
M. Takikawa Japan 17 655 1.0× 514 0.8× 226 0.7× 150 0.9× 42 0.7× 52 819
Yoshihiro Kawarada Japan 9 634 1.0× 600 0.9× 189 0.6× 107 0.6× 108 1.8× 11 759
P. Delescluse France 15 450 0.7× 545 0.9× 142 0.4× 104 0.6× 36 0.6× 29 655
S. Koshiba Japan 12 388 0.6× 600 0.9× 167 0.5× 183 1.1× 175 2.9× 52 695
S. Fukatsu Japan 10 426 0.7× 511 0.8× 125 0.4× 280 1.6× 135 2.2× 16 649
M. Mannoh Japan 15 414 0.6× 381 0.6× 148 0.5× 114 0.7× 48 0.8× 42 532
M. Wójtowicz United States 17 825 1.3× 474 0.7× 428 1.3× 90 0.5× 71 1.2× 73 893
Yoshifumi Mori Japan 17 739 1.1× 632 1.0× 128 0.4× 297 1.7× 76 1.2× 46 871
Yoshiharu Yamauchi Japan 14 392 0.6× 356 0.6× 170 0.5× 150 0.9× 58 1.0× 39 534

Countries citing papers authored by Hideto Sugawara

Since Specialization
Citations

This map shows the geographic impact of Hideto Sugawara's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hideto Sugawara with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hideto Sugawara more than expected).

Fields of papers citing papers by Hideto Sugawara

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hideto Sugawara. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hideto Sugawara. The network helps show where Hideto Sugawara may publish in the future.

Co-authorship network of co-authors of Hideto Sugawara

This figure shows the co-authorship network connecting the top 25 collaborators of Hideto Sugawara. A scholar is included among the top collaborators of Hideto Sugawara based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hideto Sugawara. Hideto Sugawara is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yamauchi, Kosuke, Sayaka Suzuki, Hideto Sugawara, et al.. (2024). Swelling behavior of calcium ion-crosslinked sodium alginate in an in vitro hemostatic tamponade model. International Journal of Biological Macromolecules. 265(Pt 2). 131060–131060. 5 indexed citations
2.
Rennie, J., Masaaki Onomura, Shinya Nunoue, et al.. (1998). Effect of metal type on the contacts to n-type and p-type GaN. Journal of Crystal Growth. 189-190. 711–715. 8 indexed citations
3.
Saito, S., Masaaki Onomura, Johji Nishio, et al.. (1998). Photoluminescence study of GaN/InGaN multiquantum well structures at room temperature. Journal of Crystal Growth. 189-190. 128–132. 3 indexed citations
4.
Itaya, Kazuhiko, Hideto Sugawara, & G. Hatakoshi. (1994). InGaAlP visible light laser diodes and light-emitting diodes. Journal of Crystal Growth. 138(1-4). 768–775. 10 indexed citations
5.
Sugawara, Hideto, Kazuhiko Itaya, & G. Hatakoshi. (1994). Hybrid-Type InGaAlP/GaAs Distributed Bragg Reflectors for InGaAlP Light-Emitting Diodes. Japanese Journal of Applied Physics. 33(11R). 6195–6195. 28 indexed citations
6.
Sugawara, Hideto, Kazuhiko Itaya, & G. Hatakoshi. (1994). Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer. Japanese Journal of Applied Physics. 33(10R). 5784–5784. 9 indexed citations
7.
Suzuki, Mariko, Kazuhiko Itaya, Yukie Nishikawa, Hideto Sugawara, & M. Okajima. (1993). Reduction of residual oxygen incorporation and deep levels by substrate misorientation in InGaAlP alloys. Journal of Crystal Growth. 133(3-4). 303–308. 21 indexed citations
8.
Sugawara, Hideto, Kazuhiko Itaya, & G. Hatakoshi. (1993). Characteristics of a distributed Bragg reflector for the visible-light spectral region using InGaAlP and GaAs: Comparison of transparent- and loss-type structures. Journal of Applied Physics. 74(5). 3189–3193. 19 indexed citations
9.
Sugawara, Hideto, Kazuhiko Itaya, H. Nozaki, & G. Hatakoshi. (1992). High-brightness InGaAlP green light-emitting diodes. Applied Physics Letters. 61(15). 1775–1777. 64 indexed citations
10.
Nishikawa, Yukie, Hideto Sugawara, & Yoshihiro Kokubun. (1992). Anomalous Mg incorporation behavior in InGaAlP grown by metalorganic chemical vapor deposition. Journal of Crystal Growth. 119(3-4). 292–296. 11 indexed citations
11.
Sugawara, Hideto, Kazuhiko Itaya, Masayuki Ishikawa, & G. Hatakoshi. (1992). High-Efficiency InGaAlP Visible Light-Emitting Diodes. Japanese Journal of Applied Physics. 31(8R). 2446–2446. 29 indexed citations
12.
Sugawara, Hideto, Kazuhiko Itaya, H. Nozaki, & G. Hatakoshi. (1991). High-Efficiency InGaAlP Green Light-Emitting Diodes.
13.
Sugawara, Hideto, Masayuki Ishikawa, & G. Hatakoshi. (1991). High-efficiency InGaAlP/GaAs visible light-emitting diodes. Applied Physics Letters. 58(10). 1010–1012. 135 indexed citations
14.
Nishikawa, Yukie, Masayuki Ishikawa, Hideto Sugawara, G. Hatakoshi, & Yoshihiro Kokubun. (1991). Anomalous dependence of In incorporation on substrate temperature into Zn-doped InGaA1P grown by low-pressure MOCVD. Journal of Crystal Growth. 112(4). 628–634. 7 indexed citations
15.
Nishikawa, Yukie, Hideto Sugawara, Masayuki Ishikawa, & Yoshihiro Kokubun. (1991). Effects of V/III ratio on Zn electrical activity in Zn-doped InGaA1P grown by metalorganic chemical vapor deposition. Journal of Crystal Growth. 108(3-4). 728–732. 11 indexed citations
16.
Ohba, Yasuo, et al.. (1988). Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD. Journal of Crystal Growth. 93(1-4). 406–411. 57 indexed citations
17.
Ohba, Yasuo, et al.. (1988). A study of p-type doping for AlGaInP grown by low-pressure MOCVD. Journal of Crystal Growth. 93(1-4). 613–617. 32 indexed citations
18.
Ishikawa, Masayuki, Kazuhiko Itaya, Yukio Watanabe, et al.. (1987). High Power Operation of InGaP/InAlP Transverse Mode Stabilized Laser Diodes. 4 indexed citations
19.
Ishikawa, Masayuki, Yasuo Ohba, Hideto Sugawara, M. Yamamoto, & T. Nakanisi. (1986). Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition. Applied Physics Letters. 48(3). 207–208. 155 indexed citations
20.
Ohba, Yasuo, et al.. (1985). CW operation at - 10°C for InGaAlP visible light laser diodes grown by MOCVD. Electronics Letters. 21(23). 1084–1085. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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