A. Lenz

1.0k total citations
41 papers, 834 citations indexed

About

A. Lenz is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering. According to data from OpenAlex, A. Lenz has authored 41 papers receiving a total of 834 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Atomic and Molecular Physics, and Optics, 24 papers in Electrical and Electronic Engineering and 12 papers in Biomedical Engineering. Recurrent topics in A. Lenz's work include Semiconductor Quantum Structures and Devices (38 papers), Surface and Thin Film Phenomena (17 papers) and Nanowire Synthesis and Applications (9 papers). A. Lenz is often cited by papers focused on Semiconductor Quantum Structures and Devices (38 papers), Surface and Thin Film Phenomena (17 papers) and Nanowire Synthesis and Applications (9 papers). A. Lenz collaborates with scholars based in Germany, United States and United Kingdom. A. Lenz's co-authors include H. Eisele, M. Dähne, Rainer Timm, Л. Д. Иванова, D. Bimberg, Udo W. Pohl, S. K. Becker, Ganesh Balakrishnan, Diana L. Huffaker and K. Pötschke and has published in prestigious journals such as Physical Review Letters, Nano Letters and Applied Physics Letters.

In The Last Decade

A. Lenz

41 papers receiving 815 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Lenz Germany 17 736 573 255 196 113 41 834
А. В. Соломонов Russia 9 389 0.5× 361 0.6× 174 0.7× 82 0.4× 98 0.9× 45 518
A. Konkar United States 14 561 0.8× 535 0.9× 254 1.0× 157 0.8× 140 1.2× 25 729
Bernhard Loitsch Germany 14 349 0.5× 316 0.6× 218 0.9× 415 2.1× 94 0.8× 20 572
Yu. A. Pusep Brazil 14 454 0.6× 343 0.6× 248 1.0× 148 0.8× 81 0.7× 82 589
G. Saint‐Girons France 14 506 0.7× 550 1.0× 227 0.9× 86 0.4× 50 0.4× 43 654
S. Jeppesen Sweden 13 366 0.5× 359 0.6× 222 0.9× 237 1.2× 75 0.7× 24 542
Yasuhiro Shiraki Japan 14 436 0.6× 412 0.7× 184 0.7× 71 0.4× 71 0.6× 45 588
J. Oshinowo Germany 11 768 1.0× 538 0.9× 324 1.3× 106 0.5× 102 0.9× 26 822
M. O. Nestoklon Russia 15 589 0.8× 665 1.2× 597 2.3× 85 0.4× 109 1.0× 73 972
A. Majerfeld United States 19 819 1.1× 769 1.3× 226 0.9× 102 0.5× 211 1.9× 58 998

Countries citing papers authored by A. Lenz

Since Specialization
Citations

This map shows the geographic impact of A. Lenz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Lenz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Lenz more than expected).

Fields of papers citing papers by A. Lenz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Lenz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Lenz. The network helps show where A. Lenz may publish in the future.

Co-authorship network of co-authors of A. Lenz

This figure shows the co-authorship network connecting the top 25 collaborators of A. Lenz. A scholar is included among the top collaborators of A. Lenz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Lenz. A. Lenz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eisele, H., et al.. (2021). From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001). Journal of Physics D Applied Physics. 54(20). 205302–205302. 2 indexed citations
2.
Belz, Jürgen, et al.. (2019). Three-dimensional structure of antiphase domains in GaP on Si(0 0 1). Journal of Physics Condensed Matter. 31(14). 144001–144001. 6 indexed citations
3.
Lenz, A., et al.. (2019). Interface of GaP/Si(001) and antiphase boundary facet-type determination. Journal of Applied Physics. 125(4). 7 indexed citations
4.
Huang, Xiaoping, Scott J. Maddox, Stephen D. March, et al.. (2016). Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate. Applied Physics Letters. 108(14). 7 indexed citations
5.
Döscher, Henning, et al.. (2016). Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(3). 7 indexed citations
6.
Harrison, S., Peter Hodgson, Robert J. Young, et al.. (2016). Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs. Physical review. B.. 93(8). 33 indexed citations
7.
Eisele, H., Martial Duchamp, Christian Nenstiel, et al.. (2016). Intrinsic electronic properties of high-quality wurtzite InN. Physical review. B.. 94(24). 9 indexed citations
8.
Schulze, J.-H., A. Schliwa, A. Lenz, et al.. (2015). Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy. Physical Review B. 91(23). 9 indexed citations
9.
Ebert, Ph., A. Lenz, Л. Д. Иванова, et al.. (2011). Direct measurement of the band gap and Fermi level position at InN(112¯). Applied Physics Letters. 98(6). 37 indexed citations
10.
Timm, Rainer, H. Eisele, A. Lenz, et al.. (2010). Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy. Nano Letters. 10(10). 3972–3977. 23 indexed citations
11.
Lenz, A., H. Eisele, Rainer Timm, et al.. (2009). Limits of In(Ga)As/GaAs quantum dot growth. physica status solidi (b). 246(4). 717–720. 6 indexed citations
12.
Timm, Rainer, H. Eisele, A. Lenz, et al.. (2008). Self-Organized Formation ofGaSb/GaAsQuantum Rings. Physical Review Letters. 101(25). 256101–256101. 53 indexed citations
13.
Hopfer, F., A. Mutig, G. Fiol, et al.. (2007). 20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots. IEEE Journal of Selected Topics in Quantum Electronics. 13(5). 1302–1308. 47 indexed citations
14.
Timm, Rainer, H. Eisele, A. Lenz, et al.. (2006). Structure of InAs/GaAs quantum dots grown with Sb surfactant. Physica E Low-dimensional Systems and Nanostructures. 32(1-2). 25–28. 24 indexed citations
15.
Lenz, A., Rainer Timm, H. Eisele, et al.. (2006). Structural investigation of hierarchically self‐assembled GaAs/AlGaAs quantum dots. physica status solidi (b). 243(15). 3976–3980. 2 indexed citations
16.
Birner, Stefan, Lutz Geelhaar, H. Eisele, et al.. (2005). Effects of strain and confinement on the emission wavelength of InAs quantum dots due to aGaAs1−xNxcapping layer. Physical Review B. 71(24). 25 indexed citations
17.
Lenz, A., H. Eisele, Rainer Timm, et al.. (2004). Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. 85(17). 3848–3850. 31 indexed citations
18.
Timm, Rainer, H. Eisele, A. Lenz, et al.. (2004). Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy. Physica E Low-dimensional Systems and Nanostructures. 26(1-4). 231–235. 10 indexed citations
19.
Lenz, A., Rainer Timm, H. Eisele, et al.. (2002). Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix. Applied Physics Letters. 81(27). 5150–5152. 63 indexed citations
20.
Schmidt, Stephan, et al.. (1989). Short communications. Journal of Perinatal Medicine. 17(1). 57–65. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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