Jing-Ping Xu

922 total citations
108 papers, 762 citations indexed

About

Jing-Ping Xu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Jing-Ping Xu has authored 108 papers receiving a total of 762 indexed citations (citations by other indexed papers that have themselves been cited), including 103 papers in Electrical and Electronic Engineering, 43 papers in Materials Chemistry and 16 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Jing-Ping Xu's work include Semiconductor materials and devices (82 papers), Ferroelectric and Negative Capacitance Devices (46 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). Jing-Ping Xu is often cited by papers focused on Semiconductor materials and devices (82 papers), Ferroelectric and Negative Capacitance Devices (46 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). Jing-Ping Xu collaborates with scholars based in China, Hong Kong and United States. Jing-Ping Xu's co-authors include P. T. Lai, Lu Liu, Wing Man Tang, Xiao Ping Zou, C.L. Chan, Yuan‐Chung Cheng, Xinyuan Zhao, Lu Liu, Yuhua Cheng and Yuan Huang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

Jing-Ping Xu

102 papers receiving 732 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jing-Ping Xu China 17 670 353 92 87 56 108 762
Simona Lorenti Italy 10 297 0.4× 186 0.5× 71 0.8× 79 0.9× 39 0.7× 30 336
Mayuran Saravanapavanantham United States 7 488 0.7× 491 1.4× 140 1.5× 93 1.1× 45 0.8× 10 600
Zachary Hughes United States 6 389 0.6× 583 1.7× 122 1.3× 146 1.7× 47 0.8× 9 635
H.C. Wen United States 14 666 1.0× 182 0.5× 162 1.8× 51 0.6× 53 0.9× 43 698
Chih-Yuan S. Chang United States 6 448 0.7× 869 2.5× 159 1.7× 79 0.9× 101 1.8× 8 947
Caroline Vigreux France 13 288 0.4× 307 0.9× 70 0.8× 62 0.7× 70 1.3× 35 392
Peiqi Zhou China 12 317 0.5× 205 0.6× 113 1.2× 112 1.3× 49 0.9× 36 436
Jacob Woodruff United States 9 320 0.5× 165 0.5× 90 1.0× 217 2.5× 37 0.7× 17 394
Baiqian Zhang United States 2 152 0.2× 314 0.9× 98 1.1× 85 1.0× 34 0.6× 2 359
Junnan Ding China 16 395 0.6× 566 1.6× 101 1.1× 52 0.6× 63 1.1× 36 629

Countries citing papers authored by Jing-Ping Xu

Since Specialization
Citations

This map shows the geographic impact of Jing-Ping Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jing-Ping Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jing-Ping Xu more than expected).

Fields of papers citing papers by Jing-Ping Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jing-Ping Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jing-Ping Xu. The network helps show where Jing-Ping Xu may publish in the future.

Co-authorship network of co-authors of Jing-Ping Xu

This figure shows the co-authorship network connecting the top 25 collaborators of Jing-Ping Xu. A scholar is included among the top collaborators of Jing-Ping Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jing-Ping Xu. Jing-Ping Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Shuming, Kai Yao, Jing-Ping Xu, et al.. (2025). Highly solar modulated and robust PNIPAM/HEMC smart windows. Journal of Materials Chemistry C. 13(10). 5248–5258. 5 indexed citations
2.
Su, Rui, Ying Yang, Weiming Cheng, et al.. (2025). Forming-Free Resistive Switching Behavior in Pt/NiFe2O4/SrRuO3 Devices: Simulation and Experimental Insights Into Oxygen Vacancy Engineering. IEEE Transactions on Electron Devices. 72(4). 1723–1729.
3.
Xu, Jing-Ping, Yi Wang, Yujie Ke, Zhenqian Chen, & Wenxin Li. (2025). Angle-dependent microstructural vanadium dioxide film for thermochromic smart windows: from materials to buildings. Renewable Energy. 252. 123563–123563.
4.
Li, Wenxin, Tao Tao, Jing-Ping Xu, & Zhenqian Chen. (2024). Thermal performance of thermochromic smart windows in different indoor environments. Energy and Buildings. 324. 114941–114941. 2 indexed citations
5.
6.
Liu, Lu, Wanyu Li, Fei Li, & Jing-Ping Xu. (2023). Enhanced Performance of GaAs Metal-Oxide-Semiconductor Capacitors Using a TaON/GeON Dual Interlayer. Nanomaterials. 13(19). 2673–2673. 2 indexed citations
7.
Zou, Xiao Ping, et al.. (2021). MoS 2 transistors gated by ferroelectric HfZrO 2 with MoS 2 /mica heterojunction interface. Nanotechnology. 32(49). 495201–495201. 3 indexed citations
8.
Liu, Lu, et al.. (2021). Impacts of HfZrO thickness and anneal temperature on performance of MoS 2 negative-capacitance field-effect transistors. Nanotechnology. 32(44). 445201–445201. 5 indexed citations
9.
10.
Xu, Jing-Ping, et al.. (2020). Comprehensive investigation on CF4/O2-plasma treating the interfaces of stacked gate dielectric in MoS2 transistors. Applied Surface Science. 542. 148437–148437. 13 indexed citations
11.
Zou, Xiao Ping, et al.. (2020). Long-term stability of multilayer MoS 2 transistors with mica gate dielectric. Nanotechnology. 31(18). 185202–185202. 9 indexed citations
12.
Zou, Xiao Ping, et al.. (2019). Damage-free mica/MoS 2 interface for high-performance multilayer MoS 2 field-effect transistors. Nanotechnology. 30(34). 345204–345204. 24 indexed citations
13.
Liu, Lu, et al.. (2019). Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices. Semiconductor Science and Technology. 34(3). 35027–35027. 1 indexed citations
14.
Xu, Jing-Ping, et al.. (2019). Optimizing Al-doped ZrO 2 as the gate dielectric for MoS 2 field-effect transistors. Nanotechnology. 31(13). 135206–135206. 20 indexed citations
15.
Chen, Jianying, Lu Liu, Chunxia Li, & Jing-Ping Xu. (2019). Chemical Vapor Deposition Growth of Large-Area Monolayer MoS 2 and Fabrication of Relevant Back-Gated Transistor * .. Chinese Physics Letters. 36(3). 37301–37301. 14 indexed citations
16.
Xu, Jing-Ping, et al.. (2018). Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric. Nanotechnology. 29(34). 345201–345201. 40 indexed citations
17.
18.
Lai, P. T., Jing-Ping Xu, Haochen Wu, & C.L. Chan. (2004). Interfacial properties and reliability of SiO 2 grown on 6H-SiC in dry O 2 plus trichloroethylene. Microelectronics Reliability. 44(4). 577–580. 11 indexed citations
19.
Lai, P. T., et al.. (2003). Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. Microelectronics Reliability. 43(1). 163–166. 1 indexed citations
20.
Xu, Jing-Ping, P. T. Lai, & Yi Pik Cheng. (1998). A comparison between the interface properties of N2O-nitrided and N2O-grown oxides. Solid-State Electronics. 42(11). 2053–2056. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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