John R. Troxell

773 total citations
16 papers, 569 citations indexed

About

John R. Troxell is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, John R. Troxell has authored 16 papers receiving a total of 569 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in John R. Troxell's work include Thin-Film Transistor Technologies (7 papers), Silicon and Solar Cell Technologies (7 papers) and Semiconductor materials and devices (4 papers). John R. Troxell is often cited by papers focused on Thin-Film Transistor Technologies (7 papers), Silicon and Solar Cell Technologies (7 papers) and Semiconductor materials and devices (4 papers). John R. Troxell collaborates with scholars based in United States. John R. Troxell's co-authors include G. D. Watkins, Ashok Chatterjee, Lionel C. Kimerling, Roger A. Miller, William H. Dumbaugh, Francis P. Fehlner, J. V. Mantese, C. M. Thrush, Qijia Shi and Norman W. Schubring and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

John R. Troxell

16 papers receiving 518 citations

Peers

John R. Troxell
K. V. Vaidyanathan United States
R. R. Bradley United Kingdom
C. J. Gibbings United Kingdom
J. Klatt United States
B.W. Straughan United Kingdom
Mitsutoshi Takahashi Japan
G. Pelous France
A. O. Evwaraye United States
K. E. Strege United States
P. Hazdra Czechia
K. V. Vaidyanathan United States
John R. Troxell
Citations per year, relative to John R. Troxell John R. Troxell (= 1×) peers K. V. Vaidyanathan

Countries citing papers authored by John R. Troxell

Since Specialization
Citations

This map shows the geographic impact of John R. Troxell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John R. Troxell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John R. Troxell more than expected).

Fields of papers citing papers by John R. Troxell

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John R. Troxell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John R. Troxell. The network helps show where John R. Troxell may publish in the future.

Co-authorship network of co-authors of John R. Troxell

This figure shows the co-authorship network connecting the top 25 collaborators of John R. Troxell. A scholar is included among the top collaborators of John R. Troxell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John R. Troxell. John R. Troxell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Mantese, J. V., Adolph L. Micheli, Norman W. Schubring, et al.. (2007). Enhanced pyroelectric sensitivity using ferroelectric active mode detection. Applied Physics Letters. 90(11). 3 indexed citations
2.
Troxell, John R., et al.. (2007). Infrared absorber for pyroelectric detectors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 25(3). 437–440. 11 indexed citations
3.
Troxell, John R., et al.. (2001). A 360×226 Pixel CMOS Imager Chip Optimized for Automotive Vision Applications. SAE technical papers on CD-ROM/SAE technical paper series. 1. 2 indexed citations
4.
Troxell, John R., et al.. (1996). Thin-film transistor fabrication for high brightness reconfigurable vacuum fluorescent displays. IEEE Transactions on Electron Devices. 43(5). 706–712. 3 indexed citations
5.
Troxell, John R., et al.. (1991). Enhanced Polysilicon Thin‐Film Transistor Performance by Oxide Encapsulation. Journal of The Electrochemical Society. 138(3). 802–806. 1 indexed citations
6.
Troxell, John R., et al.. (1987). Laser-recrystallized silicon thin-film transistors on expansion-matched 800°C glass. IEEE Electron Device Letters. 8(12). 576–578. 5 indexed citations
7.
Troxell, John R., et al.. (1986). Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate. IEEE Electron Device Letters. 7(11). 597–599. 32 indexed citations
8.
Troxell, John R., et al.. (1985). Large Grain Growth of Silicon Films on Low Temperature Glass Substrates. MRS Proceedings. 53. 1 indexed citations
9.
Troxell, John R.. (1985). Mosfet fabrication using ion beam nitridation. Journal of Electronic Materials. 14(6). 707–728. 5 indexed citations
10.
Troxell, John R., et al.. (1984). Adhesion Effects on the Recrystallization of Silicon Films. MRS Proceedings. 35. 1 indexed citations
11.
Troxell, John R., et al.. (1984). Device Processing Aspects of Ion Beam Nitridation. Journal of The Electrochemical Society. 131(10). 2353–2359. 6 indexed citations
12.
Troxell, John R.. (1983). Ion-implantation associated defect production in silicon. Solid-State Electronics. 26(6). 539–548. 60 indexed citations
13.
Troxell, John R. & G. D. Watkins. (1980). Interstitial boron in silicon: A negative-Usystem. Physical review. B, Condensed matter. 22(2). 921–931. 109 indexed citations
14.
Troxell, John R. & G. D. Watkins. (1980). Automatic calibration circuit for a deep level transient spectrometer. Review of Scientific Instruments. 51(1). 143–144. 2 indexed citations
15.
Watkins, G. D. & John R. Troxell. (1980). Negative-U Properties for Point Defects in Silicon. Physical Review Letters. 44(9). 593–596. 235 indexed citations
16.
Troxell, John R., Ashok Chatterjee, G. D. Watkins, & Lionel C. Kimerling. (1979). Recombination-enhanced migration of interstitial aluminum in silicon. Physical review. B, Condensed matter. 19(10). 5336–5348. 93 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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