J. Oswald

1.7k total citations
164 papers, 1.4k citations indexed

About

J. Oswald is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. Oswald has authored 164 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 109 papers in Electrical and Electronic Engineering, 104 papers in Atomic and Molecular Physics, and Optics and 94 papers in Materials Chemistry. Recurrent topics in J. Oswald's work include Semiconductor Quantum Structures and Devices (71 papers), Luminescence Properties of Advanced Materials (35 papers) and Glass properties and applications (31 papers). J. Oswald is often cited by papers focused on Semiconductor Quantum Structures and Devices (71 papers), Luminescence Properties of Advanced Materials (35 papers) and Glass properties and applications (31 papers). J. Oswald collaborates with scholars based in Czechia, France and Germany. J. Oswald's co-authors include J. Pangrác, E. Hulicius, A. Hospodková, Božena Frumarová, K. Kuldová, M. Frumar, Pavla Nekvindová, Petr Němec, J. Kočka and Petr Malinský and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Oswald

157 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Oswald Czechia 19 923 839 628 325 205 164 1.4k
R.T. Cox France 20 1.1k 1.2× 868 1.0× 1.2k 1.9× 104 0.3× 100 0.5× 74 2.0k
Young-Dahl Jho South Korea 18 664 0.7× 411 0.5× 364 0.6× 208 0.6× 195 1.0× 69 1.1k
L. Arizméndi Spain 23 658 0.7× 1.3k 1.6× 1.5k 2.4× 201 0.6× 224 1.1× 109 2.0k
A. G. Marinopoulos Portugal 19 1.1k 1.2× 372 0.4× 451 0.7× 78 0.2× 198 1.0× 48 1.4k
Devki N. Talwar United States 22 921 1.0× 985 1.2× 907 1.4× 106 0.3× 170 0.8× 145 1.9k
J. F. Morhange France 20 793 0.9× 819 1.0× 473 0.8× 80 0.2× 215 1.0× 65 1.4k
R. M. Biefeld United States 27 731 0.8× 1.6k 1.9× 1.4k 2.2× 103 0.3× 258 1.3× 138 2.2k
Michel Bockstedte Germany 25 1.2k 1.2× 1.5k 1.8× 687 1.1× 286 0.9× 114 0.6× 82 2.3k
Tetsuo Ikari Japan 23 1.4k 1.5× 1.4k 1.6× 597 1.0× 91 0.3× 232 1.1× 213 2.0k
Tomosumi Kamimura Japan 16 715 0.8× 568 0.7× 380 0.6× 286 0.9× 218 1.1× 65 1.4k

Countries citing papers authored by J. Oswald

Since Specialization
Citations

This map shows the geographic impact of J. Oswald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Oswald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Oswald more than expected).

Fields of papers citing papers by J. Oswald

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Oswald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Oswald. The network helps show where J. Oswald may publish in the future.

Co-authorship network of co-authors of J. Oswald

This figure shows the co-authorship network connecting the top 25 collaborators of J. Oswald. A scholar is included among the top collaborators of J. Oswald based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Oswald. J. Oswald is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vařák, Petr, J. Oswald, V. Dědič, et al.. (2025). Classical and combinatorial Judd–Ofelt analysis of spectroscopic properties in Er-doped materials: TeO2–ZnO–BaO:Er3+ glasses. Journal of Physics Photonics. 7(2). 25006–25006. 3 indexed citations
2.
Beneš, Ludvı́k, Klára Melánová, Stanislav Šlang, et al.. (2023). Enhancement of photoluminescence properties in Er3+-doped Gd3Sc Ga5−O12 garnet nanocrystals by Sc3+ co-doping. Journal of Luminescence. 263. 120044–120044. 4 indexed citations
3.
Jeřábek, V., David Mareš, Petr Vařák, et al.. (2023). Erbium–bismuth-doped germanium silicate active optic glass for broad-band optical amplification. Optical Materials. 137. 113621–113621. 12 indexed citations
4.
Jarý, Vítězslav, Tomáš Hubáček, A. Hospodková, et al.. (2023). Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn. ECS Journal of Solid State Science and Technology. 12(6). 66004–66004. 1 indexed citations
5.
Cajzl, Jakub, Pavla Nekvindová, Petr Malinský, et al.. (2019). Erbium-ion implantation of single- and nano-crystalline ZnO. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 464. 65–73. 6 indexed citations
6.
Hubáček, Tomáš, A. Hospodková, K. Kuldová, et al.. (2018). Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs. CrystEngComm. 21(2). 356–362. 19 indexed citations
7.
Wágner, T., J. Oswald, Karel Pálka, et al.. (2017). Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment. Journal of Materials Chemistry C. 5(33). 8489–8497. 10 indexed citations
8.
Stoulil, Jan, et al.. (2015). Electrochemical properties of corrosion products formed on Zn‐Mg, Zn‐Al and Zn‐Al‐Mg coatings in model atmospheric conditions. Materials and Corrosion. 66(8). 777–782. 53 indexed citations
9.
Hospodková, A., M. Nikl, O. Pacherová, et al.. (2014). InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study. Nanotechnology. 25(45). 455501–455501. 31 indexed citations
10.
Nekvindová, Pavla, Jakub Cajzl, B. Švecová, et al.. (2013). Erbium diffusion from erbium metal or erbium oxide layers deposited on the surface of various LiNbO3 cuts. Optical Materials. 36(2). 402–407. 2 indexed citations
11.
Hazdra, P., J. Oswald, K. Kuldová, et al.. (2011). Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 <I>μ</I>m Bands. Journal of Nanoscience and Nanotechnology. 11(8). 6804–6809. 5 indexed citations
12.
Hazdra, P., J. Oswald, K. Kuldová, et al.. (2009). Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. Superlattices and Microstructures. 46(1-2). 324–327. 6 indexed citations
13.
Hospodková, A., E. Hulicius, J. Pangrác, et al.. (2009). InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots. Journal of Crystal Growth. 312(8). 1383–1387. 15 indexed citations
14.
Prajzler, Václav, et al.. (2007). Infrared Photoluminescence of Er 3+ and Er 3+ /Yb 3+ Doped Epoxy Novolak Resin.
15.
Černý, P., J. Oswald, Jan Šulc, et al.. (2006). Multi-watt and tunable diode-pumped operation of Tm:GdVO4 crystal grown by a floating zone method. Advanced Solid-State Photonics. 27. TuB6–TuB6. 5 indexed citations
16.
Civiš, Svatopluk, T. Šimeček, E. Hulicius, et al.. (2004). GaSb based lasers operating near 2.3 μm for high resolution absorption spectroscopy. Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy. 61(13-14). 3066–3069. 10 indexed citations
17.
Jelı́nek, M., L. Jastrabı́k, L. Soukup, et al.. (1999). Laser deposition of waveguiding Ti: sapphire and chalcogenide glass AsS films. Superficies y Vacío. 316–319. 1 indexed citations
18.
Jelı́nek, M., J. Lančok, J. Oswald, et al.. (1998). Planar waveguide lasers and structures created by laser ablation — an overview. Czechoslovak Journal of Physics. 48(5). 577–597. 19 indexed citations
19.
Rückschloß, M., et al.. (1995). Photoluminescence from OH-related radiative centres in silica, metal oxides and oxidized nanocrystalline and porous silicon. Journal of Luminescence. 63(5-6). 279–287. 50 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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