A. O. Evwaraye

1.2k total citations
54 papers, 937 citations indexed

About

A. O. Evwaraye is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. O. Evwaraye has authored 54 papers receiving a total of 937 indexed citations (citations by other indexed papers that have themselves been cited), including 50 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in A. O. Evwaraye's work include Silicon Carbide Semiconductor Technologies (34 papers), Semiconductor materials and devices (26 papers) and Semiconductor materials and interfaces (23 papers). A. O. Evwaraye is often cited by papers focused on Silicon Carbide Semiconductor Technologies (34 papers), Semiconductor materials and devices (26 papers) and Semiconductor materials and interfaces (23 papers). A. O. Evwaraye collaborates with scholars based in United States, China and Canada. A. O. Evwaraye's co-authors include Edmund Sun, W. C. Mitchel, Steven R. Smith, S. R. Smith, B. Jayant Baliga, M. Roth, R. N. Hall, T. J. Soltys, A. Saxler and Jonathan T. Goldstein and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. O. Evwaraye

51 papers receiving 885 citations

Peers

A. O. Evwaraye

EEE

AMPO

EOMM

L. C. Kimerling United States

Masaru Shimada Japan

Osamu Sugiura Japan

N. D. Wilsey United States

G. Pelous France

J. F. Barbot France

Mitsutoshi Takahashi Japan

P. Hazdra Czechia

K.G. Stephens United Kingdom

Yoshiyuki Suda Japan

L. C. Kimerling United States

A. O. Evwaraye

1.1k ×1.2

EEE

556 ×1.4

AMPO

345 ×2.4

114 ×1.4

18 ×0.3

EOMM

Citations per year, relative to A. O. Evwaraye A. O. Evwaraye (= 1×) peers L. C. Kimerling

Countries citing papers authored by A. O. Evwaraye

Since Specialization

Citations

This map shows the geographic impact of A. O. Evwaraye's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. O. Evwaraye with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. O. Evwaraye more than expected).

Fields of papers citing papers by A. O. Evwaraye

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. O. Evwaraye. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. O. Evwaraye. The network helps show where A. O. Evwaraye may publish in the future.

Co-authorship network of co-authors of A. O. Evwaraye

This figure shows the co-authorship network connecting the top 25 collaborators of A. O. Evwaraye. A scholar is included among the top collaborators of A. O. Evwaraye based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. O. Evwaraye. A. O. Evwaraye is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Evwaraye, A. O., Sheila R. Smith, & S. Elhamri. (2014). Optical admittance spectroscopy studies near the band edge of gallium nitride. Journal of Applied Physics. 115(3). 33706–33706. 7 indexed citations

Mitchel, W. C., William D. Mitchell, S. R. Smith, et al.. (2006). Deep Level near E<sub>C</sub> – 0.55 eV in Undoped 4H-SiC Substrates. Materials science forum. 527-529. 505–508. 1 indexed citations

Smith, S. R., A. O. Evwaraye, W. C. Mitchel, J. S. Solomon, & Jonathan T. Goldstein. (1999). Characterization of Vanadium-Doped 4H-SiC Using Optical Admittance Spectroscopy. MRS Proceedings. 572. 1 indexed citations

Smith, Steven R., A. O. Evwaraye, M. C. Ohmer, et al.. (1999). Analysis of Cr-Doped CdGeAs₂ Using Thermal Admittance Spectroscopy. MRS Proceedings. 607. 1 indexed citations

Mitchel, W. C., R. Perrin, Jonathan T. Goldstein, et al.. (1998). Deep Levels in SiC:V by High Temperature Transport Measurements. Materials science forum. 264-268. 545–548. 9 indexed citations

Evwaraye, A. O., Steven R. Smith, & W. C. Mitchel. (1998). The Effect of Doping On Nitrogen Activation Energy Level In 4H-SiC. MRS Proceedings. 510. 1 indexed citations

Evwaraye, A. O., Steven R. Smith, W. C. Mitchel, & H. McD. Hobgood. (1997). Boron acceptor levels in 6H-SiC bulk samples. Applied Physics Letters. 71(9). 1186–1188. 18 indexed citations

Smith, S. R., A. O. Evwaraye, & W. C. Mitchel. (1997). Admittance Spectroscopy of 6H, 4H, and 15R Silicon Carbide. physica status solidi (a). 162(1). 227–238. 10 indexed citations

Evwaraye, A. O., et al.. (1997). Thermal Activation Energies for the Three Inequivalent Lattice Sites for the B<sub>Si</sub> Acceptor in 6H-SiC. Materials science forum. 258-263. 691–696. 1 indexed citations

10.

Evwaraye, A. O., Steven R. Smith, & W. C. Mitchel. (1996). Shallow and deep levels in n-type 4H-SiC. Journal of Applied Physics. 79(10). 7726–7730. 39 indexed citations

11.

Evwaraye, A. O., Steven R. Smith, & W. C. Mitchel. (1995). Kinetics of slow buildup of photoconductance in n-type 6H–SiC. Applied Physics Letters. 66(20). 2691–2693. 8 indexed citations

12.

Evwaraye, A. O., Steven R. Smith, & W. C. Mitchel. (1994). Shallow levels in n-type 6H-silicon carbide as determined by admittance spectroscopy. Journal of Applied Physics. 75(7). 3472–3476. 20 indexed citations

13.

Evwaraye, A. O., Steven R. Smith, Marek Skowroński, & W. C. Mitchel. (1993). Observation of surface defects in 6H-SiC wafers. Journal of Applied Physics. 74(8). 5269–5271. 24 indexed citations

14.

Evwaraye, A. O., R. N. Hall, & T. J. Soltys. (1979). DLTS Measurements of Trapping Defects in High Purity Germanium. IEEE Transactions on Nuclear Science. 26(1). 271–275. 29 indexed citations

15.

Evwaraye, A. O.. (1977). Electron-irradiation damage in antimony-doped silicon. Journal of Applied Physics. 48(2). 734–738. 46 indexed citations

16.

Evwaraye, A. O.. (1977). The defect levels in p-type silicon doped with manganese. Journal of Applied Physics. 48(9). 3813–3818. 14 indexed citations

17.

Evwaraye, A. O. & B. Jayant Baliga. (1977). The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices. Journal of The Electrochemical Society. 124(6). 913–916. 54 indexed citations

18.

Evwaraye, A. O. & H. H. Woodbury. (1976). Electrical properties of manganese-doped gallium phosphide. Journal of Applied Physics. 47(4). 1595–1598. 17 indexed citations

19.

Evwaraye, A. O.. (1976). The role of oxygen in irradiated arsenic-doped silicon. Applied Physics Letters. 29(8). 476–478. 17 indexed citations

20.

Evwaraye, A. O., et al.. (1976). Determination of interface and bulk-trap states of IGFET’s using deep-level transient spectroscopy. Journal of Applied Physics. 47(10). 4574–4577. 64 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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