K. Kuldová

852 citations

67 papers · 666 indexed · h-index 16

Impact in

Physical and Theoretical Chemistry top 5%
- Photochemistry and Electron Transfer Studies
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in

Condensed Matter Physics 27
- GaN-based semiconductor devices and materials 27
Atomic and Molecular Physics, and Optics 42
- Semiconductor Quantum Structures and Devices 41

Co-authors: A. Hospodková H.P. Trommsdorff J. Oswald J. Pangrác E. Hulicius Carola Kryschi J. Ern Arthur Thomas Bens
Journals: Journal of Crystal Growth (17 papers)Materials Science and Engineering B (5 papers)Journal of Luminescence (4 papers)Journal of Applied Physics (3 papers)The Journal of Physical Chemistry A (3 papers)
Partner nations: Czechia France Germany

In The Last Decade

K. Kuldová

63 papers receiving 653 citations

Peers

Countries citing papers authored by K. Kuldová

Since Specialization

Citations

This map shows the geographic impact of K. Kuldová's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Kuldová with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Kuldová more than expected).

Fields of papers citing papers by K. Kuldová

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Kuldová. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Kuldová. The network helps show where K. Kuldová may publish in the future.

Co-authors

The 25 scholars most cited alongside K. Kuldová, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Kuldová Line = papers co-authored together K. Kuldová links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Room temperature excitonic coupling in self-assembled copper – Fullerene hybrid films exposed to ambient air Carbon ·Vasily Lavrentiev, D. Chvostová, Mariana Klementová, K. Kuldová, Esther de Prado, J. Vacı́k, Inna Lavrentieva, A. Dejneka	2024	0
2	On the Origin of the Light Yield Enhancement in Polymeric Composite Scintillators Loaded with Dense Nanoparticles Nano Letters ·Irène Villa, Angelo Monguzzi, Roberto Lorenzi, Matteo Orfano, Vladimír Babin, František Hájek, K. Kuldová, Romana Kučerková, Alena Beitlerová, I. Mattei, Hana Burešová, Radek Pjatkan, Václav Čuba, Lenka Procházková, M. Nikl	2024	9
3	Peculiarities Related to Er Doping of ZnO Nanorods Simultaneously Grown as Particles and Vertically Arranged Arrays The Journal of Physical Chemistry C ·M. Buryi, Z. Remeš, František Hájek, K. Kuldová, Vladimír Babin, Kateřina Děcká, Hadi Hematian, Lucie Landová, Neda Neyková, Eva Horynová, Bohuslav Rezek	2023	2
4	Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn ECS Journal of Solid State Science and Technology ·František Hájek, Vítězslav Jarý, Tomáš Hubáček, Filip Dominec, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, Tomáš Vaněk, M. Buryi, Gilles Ledoux, Christophe Dujardin	2023	1
5	Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers Materials ·A. Hospodková, Jakub Čı́žek, František Hájek, Tomáš Hubáček, J. Pangrác, Filip Dominec, K. Kuldová, Jan Batysta, Maciej Oskar Liedke, Eric Hirschmann, Maik Butterling, A. Wagner	2022	4
6	Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters Journal of Crystal Growth ·A. Hospodková, František Hájek, Tomáš Hubáček, Zuzana Gedeonová, Pavel Hubı́k, Jiřı́ J. Mareš, J. Pangrác, Filip Dominec, K. Kuldová, E. Hulicius	2022	3
7	Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design Semiconductor Science and Technology ·František Hájek, A. Hospodková, Pavel Hubı́k, Zuzana Gedeonová, Tomáš Hubáček, J. Pangrác, K. Kuldová	2021	17
8	Ellipsometry, reflectance, and photoluminescence of nanocrystalline CuCl thin films on silicon Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·J. Humlı́ček, K. Kuldová, Richard Krumpolec, David Cameron	2019	0
9	Modification of the Surface Properties of Al_xGa_1–xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments ACS Omega ·Sara Gleco, Oleksandr Romanyuk, Ivan Gordeev, K. Kuldová, Tania Paskova, Albena Ivanisevic	2019	3
10	Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs CrystEngComm ·Tomáš Hubáček, A. Hospodková, K. Kuldová, J. Oswald, J. Pangrác, Vítězslav Jarý, Filip Dominec, Markéta Zíková, František Hájek, E. Hulicius, A. Vetushka, Gilles Ledoux, Christophe Dujardin, M. Nikl	2018	19
11	Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Journal of Crystal Growth ·Markéta Zíková, A. Hospodková, J. Pangrác, Tomáš Hubáček, J. Oswald, K. Kuldová, František Hájek, Gilles Ledoux, Christophe Dujardin	2018	7
12	MOVPE prepared self-organised InAs/GaAs mono- and multi-layer quantum dot structures: magneto-photoluminescence study of electronic transitions Università del Salento ·A. Hospodková, K. Kuldová, J. Oswald, E. Hulicius, J. Pangrác, T. Šimeček, I. Vávra	2015	0
13	The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots Journal of Applied Physics ·Maciej R. Molas, K. Gołasa, K. Kuldová, J. Borysiuk, A. Babiński, J. Lapointe, Z. R. Wasilewski	2012	4
14	Self-Assembled InAs/GaAs Quantum Dots Covered by Different Strain Reducing Layers Exhibiting Strong Photo- and Electroluminescence in 1.3 and 1.55 <I>μ</I>m Bands Journal of Nanoscience and Nanotechnology ·P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác	2011	5
15	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots Journal of Crystal Growth ·A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra, Ondřej Caha	2009	15
16	Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs Superlattices and Microstructures ·P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác	2009	6
17	Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures Journal of Crystal Growth ·E. Hulicius, J. Oswald, J. Pangrác, Jan Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, Tomislav Šimeček	2007	14
18	Ring-Opening and -Closure Reaction Dynamics of a Photochromic Dithienylethene Derivative The Journal of Physical Chemistry A ·J. Ern, Arthur Thomas Bens, Hans‐Dieter Martin, K. Kuldová, H.P. Trommsdorff, Carola Kryschi	2002	64
19	Dihydroazulene/vinylheptafulvene photochromism: dynamics of the photochemical ring-opening reaction Chemical Physics ·J. Ern, Mary L. Petermann, Thomas Mrozek, Jörg Daub, K. Kuldová, Carola Kryschi	2000	28
20	Long-lived photoinduced proton transfer processes Journal of the Chemical Society Chemical Communications ·Yoav Eichen, Jean‐Maríe Lehn, M. Scherl, D. Haarer, R. Casalegno, A. Corval, K. Kuldová, H.P. Trommsdorff	1995	11

About K. Kuldová

K. Kuldová is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 67 papers that have together received 666 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (41 papers), GaN-based semiconductor devices and materials (27 papers), Advanced Semiconductor Detectors and Materials (18 papers), Quantum Dots Synthesis And Properties (18 papers), Ga2O3 and related materials (17 papers), Semiconductor Lasers and Optical Devices (10 papers), ZnO doping and properties (8 papers) and Photochromic and Fluorescence Chemistry (8 papers). The work is most often cited by research in Physical and Theoretical Chemistry (108 citations), Condensed Matter Physics (134 citations), Materials Chemistry (440 citations), Atomic and Molecular Physics, and Optics (274 citations) and Cellular and Molecular Neuroscience (131 citations). K. Kuldová has collaborated with scholars based in Czechia, France and Germany. Frequent co-authors include A. Hospodková, H.P. Trommsdorff, J. Oswald, J. Pangrác, E. Hulicius, Carola Kryschi, J. Ern, Arthur Thomas Bens, A. Corval and Jean‐Maríe Lehn. Their work appears in journals such as Journal of Crystal Growth, Materials Science and Engineering B, Journal of Luminescence, Journal of Applied Physics and The Journal of Physical Chemistry A.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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