P. Austin

484 citations

38 papers · 216 indexed · h-index 8

Impact in

Electrical and Electronic Engineering
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 37
- Silicon Carbide Semiconductor Technologies 29
- Electrostatic Discharge in Electronics 15
- Advancements in Semiconductor Devices and Circuit Design 12
- Electromagnetic Compatibility and Noise Suppression 11
- Semiconductor materials and devices 7
- Silicon and Solar Cell Technologies 5
- Integrated Circuits and Semiconductor Failure Analysis 4
- Radiation Effects in Electronics 4
Hardware and Architecture 1

Co-authors: Marise Bafleur Josiane Tasselli Frédéric Morancho Karine Isoird David Trémouilles F. Miller N. Buard R. Gaillard
Journals: Microelectronics Reliability (5 papers)Semiconductor Science and Technology (2 papers)Solid-State Electronics (2 papers)IEEE Transactions on Device and Materials Reliability (1 paper)IEEE Transactions on Electron Devices (1 paper)
Partner nations: France Spain Switzerland

In The Last Decade

P. Austin

37 papers receiving 205 citations

Peers

Countries citing papers authored by P. Austin

Since Specialization

Citations

This map shows the geographic impact of P. Austin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Austin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Austin more than expected).

Fields of papers citing papers by P. Austin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Austin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Austin. The network helps show where P. Austin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P. Austin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Austin Line = papers co-authored together P. Austin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analysis of an ESD failure mechanism on a SiC MESFET Microelectronics Reliability ·Helena Martins, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, P. Austin	2014	3
2	Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications IEEE Transactions on Electron Devices ·Yinghao Xu, P. Austin, Lucy Ham, Frédéric Morancho, Kyu‐Nam Kim, Josiane Tasselli	2012	45
3	Comparative study of sensitive volume and triggering criteria of SEB in 600V planar and trench IGBTs Microelectronics Reliability ·Yinghao Xu, P. Austin, Marise Bafleur	2011	28
4	Cosmic ray immunity of new IGBT structures for aerospace application Yinghao Xu, P. Austin, Marise Bafleur	2011	1
5	Investigation on 3.3 kV-50 A IGBT protection against over-voltage conditions European Conference on Power Electronics and Applications ·D. Flores, S. Hidalgo, J. Rebollo, Safwen Ben Neila, А А Кодиров, P. Austin, Chun-Yan Xia	2009	1
6	Design and Fabrication of 3.3 kV IGBTs for Traction Applications D. Flores, S. Hidalgo, J. Rebollo, Safwen Ben Neila, А А Кодиров, P. Austin, Chun-Yan Xia	2009	1
7	Sensitive volume and triggering criteria of SEB in classic planar VDMOS J. Oscar Thomson, P. Austin, F. Miller, N. Buard, Kazuhuko Hirutani, Siv Hilde Berg, R. Gaillard, Marise Bafleur, G. Sarrabayrouse	2009	2
8	Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications Microelectronics Reliability ·Kyle Mares, Никита Владимирович Карпяк, P. Austin, Li-Qiong Zhu, Ė. E. Novikova, Régis Meuret	2008	8
9	The Bi-IGBT: a low losses power structure by IGBT parallel association Semiconductor Science and Technology ·Safwen Ben Neila, Eva Åhren Snickare, P. Austin, А А Кодиров, F. Lurçat, Chun-Yan Xia, Маја Кујунџић, D. Flores, S. Hidalgo, José del R. Millán, J. Rebollo	2008	3
10	Experimental study of power IGBT technologies at large range temperature Kyle Mares, Никита Владимирович Карпяк, IHN-HWI PARK, F. Madrid, P. Austin, Li-Qiong Zhu, Michel Mermet-Guyennet	2008	3
11	Integrated IGBT short-circuit protection structure: Design and optimization Microelectronics Journal ·Safwen Ben Neila, P. Austin, А А Кодиров, Chun-Yan Xia, Coggeshall	2005	6
12	A trench IGBT distributed model with thermo-sensible parameters Eva Åhren Snickare, P. Austin, Daiki Hosoya, А А Кодиров, A.P. Simonov, Frédéric Richardeau, Jean‐Luc Schanen	2005	3
13	Realization of vertical P⁺wall through-wafer Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J.L. Sanchez, E. Scheid, P. Austin, Qiu Fengping, Irfan Arifin, Pascal Dubreuil, Chun-Yan Xia, F. Rossel, B. Rousset	2004	2
14	Short-circuit protection structure for insulated gate power devices Safwen Ben Neila, P. Austin, А А Кодиров, Chun-Yan Xia, Qiu Fengping	2004	2
15	Realization of vertical P/sup +/ walls through-wafer for bi-directional current and voltage power integrated devices А А Кодиров, E. Scheid, P. Austin, Qiu Fengping, Irfan Arifin, Pascal Dubreuil, Chun-Yan Xia, F. Rossel, B. Rousset	2004	3
16	A new high-voltage integrated switch: the "thyristor dual" function А А Кодиров, Qiu Fengping, P. Austin, Маја Кујунџић, 赵津津 Zhao Jinjin, B. Rousset, H. Foch	2003	7
17	The concave junction: an attractive topology to design specific junction terminations 이태걸, А А Кодиров, Маја Кујунџић, P. Austin, Qiu Fengping	2003	5
18	Turn-off performance comparison of self-firing MOS-thyristor devices for ZVS applications Qiu Fengping, А А Кодиров, P. Austin, Маја Кујунџић	2002	0
19	Full dynamic power bipolar device models for circuit simulation 刘永佶, 雄介正村, Маја Кујунџић, P. Austin	2002	8
20	Technology and characterization of polysilicon emitter bipolar transistors for power applications Solid-State Electronics ·P. Austin, Rikhav Shah, А А Кодиров	1995	2

About P. Austin

P. Austin is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Control and Systems Engineering and Astronomy and Astrophysics, having authored 38 papers that have together received 216 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (29 papers), Electrostatic Discharge in Electronics (15 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Electromagnetic Compatibility and Noise Suppression (11 papers), Semiconductor materials and devices (7 papers), Silicon and Solar Cell Technologies (5 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers) and Radiation Effects in Electronics (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (204 citations), Hardware and Architecture (10 citations), Condensed Matter Physics (17 citations), Astronomy and Astrophysics (10 citations) and Safety, Risk, Reliability and Quality (4 citations). P. Austin has collaborated with scholars based in France, Spain and Switzerland. Frequent co-authors include Marise Bafleur, Josiane Tasselli, Frédéric Morancho, Karine Isoird, David Trémouilles, F. Miller, N. Buard, R. Gaillard, B. Rousset and H. Foch. Their work appears in journals such as Microelectronics Reliability, Semiconductor Science and Technology, Solid-State Electronics, IEEE Transactions on Device and Materials Reliability and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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