Frédéric Richardeau

3.1k total citations · 1 hit paper
70 papers, 2.3k citations indexed

About

Frédéric Richardeau is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Mechanical Engineering. According to data from OpenAlex, Frédéric Richardeau has authored 70 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 8 papers in Control and Systems Engineering and 7 papers in Mechanical Engineering. Recurrent topics in Frédéric Richardeau's work include Silicon Carbide Semiconductor Technologies (51 papers), Advanced DC-DC Converters (27 papers) and Multilevel Inverters and Converters (25 papers). Frédéric Richardeau is often cited by papers focused on Silicon Carbide Semiconductor Technologies (51 papers), Advanced DC-DC Converters (27 papers) and Multilevel Inverters and Converters (25 papers). Frédéric Richardeau collaborates with scholars based in France, Tunisia and Portugal. Frédéric Richardeau's co-authors include F. Forest, Vanessa Smet, J.-J. Huselstein, Sébastien Lefebvre, Thierry Meynard, Xavier Roboam, Mounira Berkani, Zoubir Khatir, Christophe Turpin and Philippe Baudesson and has published in prestigious journals such as IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

In The Last Decade

Frédéric Richardeau

63 papers receiving 2.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling

2011 489 citations F. Forest, J.-J. Huselstein et al. IEEE Transactions on Industrial Electronics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Frédéric Richardeau France	18	2.2k	473	148	116	109	70	2.3k
Rixin Lai United States	23	2.3k 1.0×	695 1.5×	130 0.9×	296 2.6×	83 0.8×	59	2.4k
Tiefu Zhao United States	21	2.8k 1.2×	919 1.9×	143 1.0×	185 1.6×	78 0.7×	91	2.9k
Haoze Luo China	26	2.4k 1.1×	479 1.0×	241 1.6×	143 1.2×	267 2.4×	114	2.5k
Ui‐Min Choi South Korea	22	3.0k 1.3×	763 1.6×	203 1.4×	184 1.6×	249 2.3×	72	3.1k
Amir Sajjad Bahman Denmark	21	1.3k 0.6×	173 0.4×	368 2.5×	101 0.9×	49 0.4×	70	1.5k
Shaoyong Yang United Kingdom	8	3.0k 1.3×	464 1.0×	259 1.8×	257 2.2×	192 1.8×	11	3.2k
Mario Schweizer Switzerland	16	2.6k 1.2×	762 1.6×	123 0.8×	171 1.5×	107 1.0×	29	2.7k
Markus Andresen Germany	27	2.3k 1.0×	744 1.6×	192 1.3×	248 2.1×	129 1.2×	73	2.4k
Zoubir Khatir France	19	1.8k 0.8×	175 0.4×	310 2.1×	357 3.1×	83 0.8×	68	2.0k
A.T. Bryant United Kingdom	15	2.4k 1.1×	344 0.7×	300 2.0×	212 1.8×	121 1.1×	43	2.5k

Countries citing papers authored by Frédéric Richardeau

Since Specialization

Citations

This map shows the geographic impact of Frédéric Richardeau's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Frédéric Richardeau with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Frédéric Richardeau more than expected).

Fields of papers citing papers by Frédéric Richardeau

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Frédéric Richardeau. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Frédéric Richardeau. The network helps show where Frédéric Richardeau may publish in the future.

Co-authorship network of co-authors of Frédéric Richardeau

This figure shows the co-authorship network connecting the top 25 collaborators of Frédéric Richardeau. A scholar is included among the top collaborators of Frédéric Richardeau based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Frédéric Richardeau. Frédéric Richardeau is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Sarraute, Emmanuel, et al.. (2025). Preliminary 2D elastoplastic modeling of gate cracking in SiC MOSFETs under short-circuit conditions across a wide temperature-range using rankine's damage energetic approach. Microelectronics Reliability. 170. 115757–115757.

Sarraute, Emmanuel, et al.. (2024). Transient thermal 2D FEM analysis of SiC MOSFET in short-circuit operation including high-temperature material laws and phase transition of aluminum source electrode. Microelectronics Reliability. 159. 115440–115440. 1 indexed citations

Azzopardi, Stéphane, et al.. (2024). On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach. SPIRE - Sciences Po Institutional REpository. 84–87.

Richardeau, Frédéric, et al.. (2024). Gate Voltage Dip as a New Indicator for Online Health Monitoring of SiC MOSFETS. IEEE Transactions on Power Electronics. 40(1). 142–145.

Trémouilles, David, et al.. (2023). Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches. Microelectronics Reliability. 150. 115172–115172. 1 indexed citations

Richardeau, Frédéric, et al.. (2023). SiC power MOSFET overload detection, short-circuit protection and gate-oxide integrity monitoring using a switched resistors dual-channel gate-driver. Microelectronics Reliability. 150. 115082–115082. 1 indexed citations

Trémouilles, David, et al.. (2023). Preconditioning of p-GaN power HEMT for reproducible V measurements. Microelectronics Reliability. 144. 114955–114955. 4 indexed citations

Sarraute, Emmanuel, et al.. (2023). Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM. Microelectronics Reliability. 150. 115081–115081. 4 indexed citations

Rouger, Nicolas, et al.. (2023). CMOS Gate Driver with Integrated Ultra-Accurate and Fast Gate Charge Sensor for Robust and Ultra-Fast Short Circuit Detection of SiC power modules. SPIRE - Sciences Po Institutional REpository. 68–71. 2 indexed citations

10.

Sarraute, Emmanuel, et al.. (2023). Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode. SPIRE - Sciences Po Institutional REpository. 67. 1–8. 2 indexed citations

11.

Jamin, F., et al.. (2023). Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes. Proceedings - International Symposium for Testing and Failure Analysis. 84741. 491–499.

12.

Richardeau, Frédéric, et al.. (2023). p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver. SPIRE - Sciences Po Institutional REpository. 64–67.

13.

Cousineau, Marc, et al.. (2020). CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors. IEEE Transactions on Power Electronics. 35(12). 13322–13332. 28 indexed citations

14.

Richardeau, Frédéric, et al.. (2017). Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectronics Reliability. 76-77. 532–538. 27 indexed citations

15.

Richardeau, Frédéric, et al.. (2012). Reliability Calculation of Multilevel Converters: Theory and Applications. IEEE Transactions on Industrial Electronics. 60(10). 4225–4233. 170 indexed citations

16.

Forest, F., et al.. (2005). Using the Multilevel Imbricated Cells Topologies in the Design of Low-Power Power-Factor-Corrector Converters. IEEE Transactions on Industrial Electronics. 52(1). 151–161. 24 indexed citations

17.

Roboam, Xavier, et al.. (2004). Comparative study of maximum power strategy in wind turbines. 993–998 vol. 2. 53 indexed citations

18.

Turpin, Christophe, et al.. (2003). Switching faults and safe control of an ARCP multicell flying capacitor inverter. IEEE Transactions on Power Electronics. 18(5). 1158–1167. 10 indexed citations

19.

Turpin, Christophe, et al.. (2002). A ZVS imbricated cell multilevel inverter with auxiliary resonant commutated poles. IEEE Transactions on Power Electronics. 17(6). 874–882. 2 indexed citations

20.

Richardeau, Frédéric, et al.. (2002). New strategy of control at low flicker level for DC electrical arc furnace converter. 500–504. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact