M. Oszwałdowski

426 total citations
48 papers, 320 citations indexed

About

M. Oszwałdowski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Oszwałdowski has authored 48 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in M. Oszwałdowski's work include Semiconductor Quantum Structures and Devices (18 papers), Advanced Semiconductor Detectors and Materials (13 papers) and Chalcogenide Semiconductor Thin Films (12 papers). M. Oszwałdowski is often cited by papers focused on Semiconductor Quantum Structures and Devices (18 papers), Advanced Semiconductor Detectors and Materials (13 papers) and Chalcogenide Semiconductor Thin Films (12 papers). M. Oszwałdowski collaborates with scholars based in Poland, Ukraine and Germany. M. Oszwałdowski's co-authors include Jacek Goc, J. Grabowski, Jakub Jankowski, Marek Nowak, V. K. Dugaev, J. Szade, Anatoly Druzhinin, V. I. Litvinov, A. I. Fedorenko and R. Czajka and has published in prestigious journals such as Physical review. B, Condensed matter, Journal of Applied Physics and Sensors.

In The Last Decade

M. Oszwałdowski

45 papers receiving 309 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Oszwałdowski Poland 10 246 137 135 40 35 48 320
M.A. Gibbon United Kingdom 9 359 1.5× 185 1.4× 68 0.5× 57 1.4× 18 0.5× 22 423
S.J. Jeng United States 14 571 2.3× 157 1.1× 132 1.0× 19 0.5× 71 2.0× 35 636
D. Schmitz Germany 11 226 0.9× 149 1.1× 81 0.6× 29 0.7× 42 1.2× 48 308
Hoshiteru Nozawa Japan 8 386 1.6× 247 1.8× 107 0.8× 33 0.8× 12 0.3× 16 455
S. Takamiya Japan 14 544 2.2× 372 2.7× 75 0.6× 29 0.7× 36 1.0× 87 585
Pauline Paki United States 12 306 1.2× 223 1.6× 87 0.6× 12 0.3× 55 1.6× 31 464
R. Holmstrom United States 14 355 1.4× 195 1.4× 85 0.6× 14 0.3× 43 1.2× 33 410
Fumiaki Hyuga Japan 12 283 1.2× 249 1.8× 81 0.6× 19 0.5× 23 0.7× 37 348
H. Bleichner Sweden 14 586 2.4× 176 1.3× 71 0.5× 49 1.2× 17 0.5× 34 606
Yue Xu China 12 349 1.4× 83 0.6× 98 0.7× 17 0.4× 23 0.7× 60 419

Countries citing papers authored by M. Oszwałdowski

Since Specialization
Citations

This map shows the geographic impact of M. Oszwałdowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Oszwałdowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Oszwałdowski more than expected).

Fields of papers citing papers by M. Oszwałdowski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Oszwałdowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Oszwałdowski. The network helps show where M. Oszwałdowski may publish in the future.

Co-authorship network of co-authors of M. Oszwałdowski

This figure shows the co-authorship network connecting the top 25 collaborators of M. Oszwałdowski. A scholar is included among the top collaborators of M. Oszwałdowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Oszwałdowski. M. Oszwałdowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Oszwałdowski, M., et al.. (2019). Using double Hall sensor structure to greatly reduce voltage offset in epitaxial graphene. Journal of Applied Physics. 125(10). 1 indexed citations
2.
Jankowski, Jakub, et al.. (2012). ON POSSIBILITY OF APPLICATION OF INSB-BASED HIGH-TEMPERATURE HALL SENSORS FOR ITER MAGNETIC DIAGNOSTICS. Proceedings of Electrotechnical Institute. 149–156. 1 indexed citations
3.
Oszwałdowski, M., et al.. (2012). Extraordinary magnetoresistace in planar configuration. Journal of Physics D Applied Physics. 45(14). 145002–145002. 11 indexed citations
4.
Oszwałdowski, M., et al.. (2011). Hall Sensors for Extreme Temperatures. Sensors. 11(1). 876–885. 44 indexed citations
5.
Oszwałdowski, M., et al.. (2009). Obudowa wysokotemperaturowa czujnika Halla. Elektronika : konstrukcje, technologie, zastosowania. 50. 72–74.
6.
Oszwałdowski, M., et al.. (2008). Ablation of CdTe with 100 μs pulses from Nd:YAG laser: Velocity distribution of emitted particles. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 266(21). 4766–4774. 1 indexed citations
7.
Oszwałdowski, M., et al.. (2007). Ablation of CdTe with 100 µs Nd:YAG laser pulses: dependence on target preparation method. Crystal Research and Technology. 43(1). 32–43. 1 indexed citations
8.
Czajka, R., et al.. (2005). Early stages of low temperature epitaxial growth of InSb on GaAs. Crystal Research and Technology. 40(4-5). 523–526. 2 indexed citations
9.
Oszwałdowski, M., et al.. (2003). Apparatus for pulsed laser deposition of semiconductor thin films. Review of Scientific Instruments. 74(6). 3160–3163. 3 indexed citations
10.
Oszwałdowski, M., et al.. (2003). Pulsed laser deposition of II–VI semiconductor thin films and their layered structures. Journal of Alloys and Compounds. 371(1-2). 164–167. 4 indexed citations
11.
Druzhinin, Anatoly, et al.. (2002). Studies of Piezoresistance and Piezomagnetoresistance in Si Whiskers at Cryogenic Temperatures. Crystal Research and Technology. 37(2-3). 243–257. 13 indexed citations
12.
Mitin, V. F., E. F. Venger, Н. С. Болтовец, M. Oszwałdowski, & T. Berns. (1998). Low-temperature Ge film resistance thermometers. Sensors and Actuators A Physical. 68(1-3). 303–306. 10 indexed citations
13.
Litvinov, V. I., et al.. (1994). Magnetic Field Dependence of Hall Coefficient in Short-Period PbTe/SnTe Superlattices. physica status solidi (a). 145(2). 503–508. 5 indexed citations
14.
Fedorenko, A. I., et al.. (1992). Strain in PbTe/SnTe heterojunctions grown on (001) KCI. Vacuum. 43(12). 1191–1193. 6 indexed citations
15.
Oszwałdowski, M., et al.. (1992). Use of inter-electrode commutation for elimination of non-Hall voltages in inhomogeneous Hall generators. Sensors and Actuators A Physical. 33(3). 167–173. 2 indexed citations
16.
Mironov, O. A., et al.. (1991). The Hall effect in selectively doped strained-layer Ge-Ge1−xSix superlattices superlattices. Superlattices and Microstructures. 10(4). 467–470. 1 indexed citations
17.
Oszwałdowski, M., et al.. (1989). Effect of tin doping on InSb thin films. Thin Solid Films. 172(1). 71–80. 5 indexed citations
18.
Goc, Jacek, et al.. (1984). Preparation and electrical properties of InSb thin films heavily doped with tellurium, selenium and sulphur. Thin Solid Films. 111(4). 351–366. 23 indexed citations
19.
Oszwałdowski, M.. (1976). The dependence of spectral distributions of the photoconductive and photo-electromagnetic effect on sample thickness in InSb. physica status solidi (a). 37(2). 675–679. 2 indexed citations
20.
Oszwałdowski, M., et al.. (1976). The dependence of photoconductive and photoelectromagnetic effects on slab thickness in InSb at room temperature. physica status solidi (a). 36(2). 445–452. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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