N. Layadi

867 total citations
31 papers, 738 citations indexed

About

N. Layadi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computational Mechanics. According to data from OpenAlex, N. Layadi has authored 31 papers receiving a total of 738 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 7 papers in Computational Mechanics. Recurrent topics in N. Layadi's work include Thin-Film Transistor Technologies (15 papers), Silicon Nanostructures and Photoluminescence (11 papers) and Semiconductor materials and devices (10 papers). N. Layadi is often cited by papers focused on Thin-Film Transistor Technologies (15 papers), Silicon Nanostructures and Photoluminescence (11 papers) and Semiconductor materials and devices (10 papers). N. Layadi collaborates with scholars based in France, United States and Germany. N. Layadi's co-authors include B. Drévillon, I. Solomon, Pere Roca i Cabarrocas, Vincent M. Donnelly, P. Roca i Cabarrocas, T. Heitz, C. Godet, Helen Maynard, Hajime Shirai and V. M. Donnelly and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

N. Layadi

29 papers receiving 698 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. Layadi France	13	675	468	104	100	53	31	738
J. Margail France	15	695 1.0×	193 0.4×	95 0.9×	76 0.8×	84 1.6×	43	727
Manabu Itsumi Japan	14	564 0.8×	292 0.6×	33 0.3×	74 0.7×	163 3.1×	59	634
Ken’etsu Yokogawa Japan	13	501 0.7×	168 0.4×	62 0.6×	48 0.5×	70 1.3×	34	532
A. Cacciato Belgium	14	581 0.9×	251 0.5×	136 1.3×	70 0.7×	127 2.4×	64	672
A. N. Safonov United Kingdom	12	287 0.4×	173 0.4×	47 0.5×	38 0.4×	115 2.2×	42	423
Hisataka Hayashi Japan	12	468 0.7×	146 0.3×	42 0.4×	86 0.9×	47 0.9×	40	505
D. R. Kerr United States	13	565 0.8×	231 0.5×	46 0.4×	98 1.0×	141 2.7×	22	639
Miyako Matsui Japan	12	530 0.8×	155 0.3×	62 0.6×	43 0.4×	19 0.4×	42	578
Marc Fouchier France	10	298 0.4×	77 0.2×	34 0.3×	134 1.3×	143 2.7×	36	372
Manish Chandhok United States	16	597 0.9×	77 0.2×	61 0.6×	182 1.8×	55 1.0×	51	666

Countries citing papers authored by N. Layadi

Since Specialization

Citations

This map shows the geographic impact of N. Layadi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Layadi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Layadi more than expected).

Fields of papers citing papers by N. Layadi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Layadi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Layadi. The network helps show where N. Layadi may publish in the future.

Co-authorship network of co-authors of N. Layadi

This figure shows the co-authorship network connecting the top 25 collaborators of N. Layadi. A scholar is included among the top collaborators of N. Layadi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Layadi. N. Layadi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Malyshev, M. V., et al.. (2000). Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(3). 849–859. 19 indexed citations

Rietman, Edward A. & N. Layadi. (2000). A study on /spl Rfr//sup m/→/spl Rfr//sup 1/ maps: application to a 0.16-μm via etch process endpoint. IEEE Transactions on Semiconductor Manufacturing. 13(4). 457–468. 6 indexed citations

Farrow, R. C., Gregg M. Gallatin, W. K. Waskiewicz, et al.. (2000). Marks for SCALPEL® tool optics optimization. Microelectronic Engineering. 53(1-4). 309–312. 1 indexed citations

Layadi, N., et al.. (1999). Interferometry for end point prediction during plasma etching of various structures in complementary metal–oxide–semiconductor device fabrication. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(6). 2630–2637. 6 indexed citations

Cabarrocas, Pere Roca i, N. Layadi, M. Kunst, C. Clerc, & H. Bernas. (1998). Optical and transport properties of amorphous and microcrystalline silicon films prepared by excimer laser assisted rf glow-discharge deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(2). 436–443. 12 indexed citations

Donnelly, V. M. & N. Layadi. (1998). Halogen uptake by thin SiO2 layers on exposure to HBr/O2 and Cl2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1571–1576. 25 indexed citations

Maynard, Helen, et al.. (1998). Plasma etching of submicron devices: in situ monitoring and control by multi-wavelength ellipsometry. Thin Solid Films. 313-314. 398–405. 23 indexed citations

Cabarrocas, Pere Roca i, N. Layadi, B. Drévillon, & I. Solomon. (1996). Microcrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms. Journal of Non-Crystalline Solids. 198-200. 871–874. 34 indexed citations

Layadi, N., K. Guinn, Helen Maynard, et al.. (1996). Comparison of advanced plasma sources for etching applications. V. Polysilicon etching rate, uniformity, profile control, and bulk plasma properties in a helical resonator plasma source. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(4). 2510–2518. 8 indexed citations

10.

Layadi, N., Pere Roca i Cabarrocas, B. Drévillon, & I. Solomon. (1995). Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment. Physical review. B, Condensed matter. 52(7). 5136–5143. 122 indexed citations

11.

Cabarrocas, P. Roca i, N. Layadi, T. Heitz, B. Drévillon, & I. Solomon. (1995). Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences. Applied Physics Letters. 66(26). 3609–3611. 139 indexed citations

12.

Neitzert, H. C., N. Layadi, P. Roca i Cabarrocas, R. Vanderhaghen, & M. Kunst. (1995). In situ measurements of changes in the structure and in the excess charge-carrier kinetics at the silicon surface during hydrogen and helium plasma exposure. Journal of Applied Physics. 78(3). 1438–1445. 25 indexed citations

13.

Godet, C., N. Layadi, & Pere Roca i Cabarrocas. (1995). Role of mobile hydrogen in the amorphous silicon recrystallization. Applied Physics Letters. 66(23). 3146–3148. 56 indexed citations

14.

Layadi, N., et al.. (1994). In-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 37-38. 281–286. 15 indexed citations

15.

Layadi, N., et al.. (1994). Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films. Applied Physics A. 58(5). 507–512. 3 indexed citations

16.

Neitzert, H. C., N. Layadi, P. Roca i Cabarrocas, & R. Vanderhaghen. (1994). In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium, and helium plasmas. Applied Physics Letters. 65(10). 1260–1262. 3 indexed citations

17.

Neitzert, H. C., N. Layadi, Pere Roca i Cabarrocas, R. Vanderhaghen, & M. Kunst. (1994). Laser Pulsed Induced Microwave Conductivity and Spectroscopic Ellipsometry Characterization of Helium and Hydrogen Plasma Damage of the Crystalline Silicon Surface. Materials science forum. 173-174. 209–214. 1 indexed citations

18.

Drévillon, B., et al.. (1993). Real-time spectroellipsometry investigation of the interaction of silane with a Pd thin film: Formation of palladium silicides. Journal of Applied Physics. 74(4). 2535–2542. 6 indexed citations

19.

Solomon, I., B. Drévillon, Hajime Shirai, & N. Layadi. (1993). Plasma deposition of microcrystalline silicon: the selective etching model. Journal of Non-Crystalline Solids. 164-166. 989–992. 54 indexed citations

20.

Shirai, Hajime, B. Drévillon, N. Layadi, & Pere Roca i Cabarrocas. (1993). In situ UV-visible and Infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids. 164-166. 119–122. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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