Peter Gray

422 total citations
14 papers, 98 citations indexed

About

Peter Gray is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Peter Gray has authored 14 papers receiving a total of 98 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 3 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Peter Gray's work include Radio Frequency Integrated Circuit Design (10 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Peter Gray is often cited by papers focused on Radio Frequency Integrated Circuit Design (10 papers), Semiconductor materials and devices (9 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Peter Gray collaborates with scholars based in United States. Peter Gray's co-authors include Vibhor Jain, John J. Pekarik, D.L. Harame, J. Adkisson, Peng Cheng, Qizhi Liu, Marwan Khater, T. Keßler, B. Groß and Kenneth M. Steín and has published in prestigious journals such as ECS Transactions.

In The Last Decade

Peter Gray

13 papers receiving 92 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Peter Gray United States	6	98	12	10	6	3	14	98
Thomas Quémerais France	8	127 1.3×	12 1.0×	9 0.9×	5 0.8×	3 1.0×	12	129
F. Pagette United States	5	105 1.1×	12 1.0×	17 1.7×	5 0.8×	2 0.7×	6	110
A. Margain France	4	73 0.7×	9 0.8×	8 0.8×	3 0.5×	1 0.3×	6	78
H.-E. Wulf Germany	6	110 1.1×	5 0.4×	14 1.4×	5 0.8×		12	110
M. Zierak United States	7	113 1.2×	8 0.7×	8 0.8×	5 0.8×	1 0.3×	12	115
E. J. White United States	4	37 0.4×	14 1.2×	23 2.3×	7 1.2×	5 1.7×	8	46
B. Welch United States	7	145 1.5×	18 1.5×	36 3.6×	3 0.5×	7 2.3×	12	147
K. Ranjan India	3	28 0.3×	10 0.8×	5 0.5×	4 0.7×	3 1.0×	6	35
T.L. Lee Taiwan	4	104 1.1×	19 1.6×	7 0.7×	2 0.3×		6	107
N. Feilchenfeld United States	8	171 1.7×	10 0.8×	5 0.5×	6 1.0×	7 2.3×	17	174

Countries citing papers authored by Peter Gray

Since Specialization

Citations

This map shows the geographic impact of Peter Gray's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Peter Gray with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Peter Gray more than expected).

Fields of papers citing papers by Peter Gray

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Peter Gray. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Peter Gray. The network helps show where Peter Gray may publish in the future.

Co-authorship network of co-authors of Peter Gray

This figure shows the co-authorship network connecting the top 25 collaborators of Peter Gray. A scholar is included among the top collaborators of Peter Gray based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Peter Gray. Peter Gray is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

1.

Jain, Vibhor, T. Keßler, B. Groß, et al.. (2014). Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with f<inf>T</inf>/f<inf>MAX</inf> of 250/330GHz. 96–99. 5 indexed citations

2.

Adkisson, J., Vibhor Jain, Marwan Khater, et al.. (2014). SiGe HBTs in 90nm BiCMOS Technology Demonstrating f_T/f_MAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance. ECS Transactions. 64(6). 285–294. 9 indexed citations

3.

Jain, Vibhor, B. Groß, John J. Pekarik, et al.. (2014). Investigation of HBT layout impact on f<inf>T</inf> doubler performance for 90nm SiGe HBTs. 3. 5–8. 8 indexed citations

4.

Jain, Vibhor, Peng Cheng, John J. Pekarik, et al.. (2013). Study of mutual and self-thermal resistance in 90nm SiGe HBTs. 17–20. 9 indexed citations

5.

Jain, Vibhor, Peng Cheng, B. Groß, et al.. (2013). Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency. 73–76. 4 indexed citations

6.

Adkisson, J., Marwan Khater, Peter Gray, et al.. (2013). SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f_T/f_MAX through reduced R_b and C_cb parasitics. 227–230. 5 indexed citations

7.

Jain, Vibhor, Peng Cheng, John J. Pekarik, et al.. (2013). A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with f<inf>T</inf>/f<inf>MAX</inf> of 260/320 GHz. 11 indexed citations

8.

Adkisson, J., K. Chan, Peng Cheng, et al.. (2013). A Self-Aligned Sacrificial Emitter Process for High Performance SiGe HBT in BiCMOS. ECS Transactions. 50(9). 121–127.

9.

Pekarik, John J., J. Adkisson, Peng Cheng, et al.. (2012). Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology. 1–4. 4 indexed citations

10.

Cheng, Peng, Qizhi Liu, J. Adkisson, et al.. (2012). A novel Ccb and Rb reduction technique for high-speed SiGe HBTs. 40. 1–4. 2 indexed citations

11.

Lourenco, Nelson E., Robert L. Schmid, Kurt A. Moen, et al.. (2012). Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology. 1–5. 20 indexed citations

12.

Joseph, Alvin, Qizhi Liu, Peter Gray, et al.. (2007). A 0.35 ¿m SiGe BiCMOS Technology for Power Amplifier Applications. 198–201. 16 indexed citations

13.

Gray, Peter, B.A. Rainey, Andy Stricker, et al.. (2005). High performance, low complexity vertical PNP BJT integrated in a 0.18μm SiGe BiCMOS technology. 136–140. 2 indexed citations

14.

Hodges, D.A., et al.. (1984). A self calibrating 12b 12 µ s CMOS ADC. 64–65. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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