M.S. Ramm

956 total citations
50 papers, 670 citations indexed

About

M.S. Ramm is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Ceramics and Composites. According to data from OpenAlex, M.S. Ramm has authored 50 papers receiving a total of 670 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 14 papers in Ceramics and Composites. Recurrent topics in M.S. Ramm's work include Silicon Carbide Semiconductor Technologies (26 papers), GaN-based semiconductor devices and materials (18 papers) and Advanced ceramic materials synthesis (14 papers). M.S. Ramm is often cited by papers focused on Silicon Carbide Semiconductor Technologies (26 papers), GaN-based semiconductor devices and materials (18 papers) and Advanced ceramic materials synthesis (14 papers). M.S. Ramm collaborates with scholars based in Russia, Germany and Canada. M.S. Ramm's co-authors include S. Yu. Karpov, Yu.N. Makarov, A. D. Roenkov, Yu. A. Vodakov, E. N. Mokhov, M.G. Ramm, K. A. Bulashevich, Yuri Makarov, Р.А. Талалаев and A.S. Segal and has published in prestigious journals such as Journal of Crystal Growth, physica status solidi (b) and Materials Science and Engineering B.

In The Last Decade

M.S. Ramm

50 papers receiving 639 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.S. Ramm Russia 18 472 227 185 146 135 50 670
Yu. A. Vodakov Russia 15 445 0.9× 230 1.0× 135 0.7× 90 0.6× 167 1.2× 29 619
M.G. Ramm Russia 16 432 0.9× 319 1.4× 134 0.7× 84 0.6× 186 1.4× 25 666
Jason R. Jenny United States 18 882 1.9× 124 0.5× 139 0.8× 70 0.5× 281 2.1× 31 1.1k
A.S. Segal Russia 15 292 0.6× 435 1.9× 64 0.3× 80 0.5× 223 1.7× 38 625
G. Augustine United States 12 629 1.3× 86 0.4× 86 0.5× 58 0.4× 104 0.8× 36 692
Hirokatsu Yashiro Japan 15 620 1.3× 42 0.2× 142 0.8× 84 0.6× 87 0.6× 49 699
St.G. Müller Germany 12 553 1.2× 47 0.2× 128 0.7× 72 0.5× 110 0.8× 23 631
Masatoshi Kanaya Japan 15 620 1.3× 43 0.2× 125 0.7× 64 0.4× 102 0.8× 27 689
J. Wollweber Germany 14 346 0.7× 413 1.8× 54 0.3× 39 0.3× 244 1.8× 50 677
Andrea Severino Italy 12 360 0.8× 70 0.3× 47 0.3× 157 1.1× 82 0.6× 75 550

Countries citing papers authored by M.S. Ramm

Since Specialization
Citations

This map shows the geographic impact of M.S. Ramm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.S. Ramm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.S. Ramm more than expected).

Fields of papers citing papers by M.S. Ramm

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.S. Ramm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.S. Ramm. The network helps show where M.S. Ramm may publish in the future.

Co-authorship network of co-authors of M.S. Ramm

This figure shows the co-authorship network connecting the top 25 collaborators of M.S. Ramm. A scholar is included among the top collaborators of M.S. Ramm based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.S. Ramm. M.S. Ramm is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Bulashevich, K. A., et al.. (2010). Current crowding effect on light extraction efficiency of thin‐film LEDs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2124–2126. 26 indexed citations
3.
Bulashevich, K. A., M.S. Ramm, & S. Yu. Karpov. (2009). Assessment of various LED structure designs for high‐current operation. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 13 indexed citations
4.
Ramm, M.S., et al.. (2008). Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace. Materials science forum. 600-603. 27–30. 5 indexed citations
5.
Makarov, Yuri, et al.. (2008). Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane. Materials science forum. 600-603. 51–53. 1 indexed citations
6.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2004). Modeling of facet formation in SiC bulk crystal growth. Journal of Crystal Growth. 266(1-3). 313–319. 11 indexed citations
7.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2004). Faceted Growth of SiC Bulk Crystals. Materials science forum. 457-460. 63–66. 2 indexed citations
8.
Ramm, M.S., et al.. (2004). Modeling of SiC-matrix composite formation by isothermal chemical vapor infiltration. Journal of Crystal Growth. 266(1-3). 333–339. 18 indexed citations
9.
Karpov, S. Yu., et al.. (2004). Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach. Materials science forum. 457-460. 383–386. 8 indexed citations
10.
Karpov, S. Yu., et al.. (2003). Role of oxygen in AlN sublimation growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1989–1992. 6 indexed citations
11.
Mokhov, E. N., A. D. Roenkov, Yu. A. Vodakov, et al.. (2003). Growth of AlN Bulk Crystals by Sublimation Sandwich Method. Materials science forum. 433-436. 979–982. 5 indexed citations
12.
Karpov, S. Yu., et al.. (2003). Advances in modeling of wide‐bandgap bulk crystal growth. Crystal Research and Technology. 38(3-5). 237–249. 17 indexed citations
13.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2002). Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals. MRS Proceedings. 742. 3 indexed citations
14.
Karpov, S. Yu., Yu.N. Makarov, E. N. Mokhov, et al.. (2000). Analysis of sublimation growth of bulk SiC crystals in tantalum container. Journal of Crystal Growth. 211(1-4). 347–351. 38 indexed citations
15.
Ramm, M.S., et al.. (2000). Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling. MRS Proceedings. 616. 2 indexed citations
16.
Segal, A.S., S. Yu. Karpov, Yu.N. Makarov, et al.. (1999). Transport phenomena in sublimation growth of SiC bulk crystals. Materials Science and Engineering B. 61-62. 40–43. 21 indexed citations
17.
Baranov, P. G., E. N. Mokhov, M.G. Ramm, et al.. (1998). Current status of GaN crystal growth by sublimation sandwich technique. MRS Internet Journal of Nitride Semiconductor Research. 3. 19 indexed citations
18.
Vodakov, Yu. A., E. N. Mokhov, M.G. Ramm, et al.. (1997). Sublimation Sandwich Growth of Free Standing GaN Crystals. MRS Proceedings. 482. 3 indexed citations
19.
Karpov, S. Yu., Yu.N. Makarov, M.S. Ramm, & Р.А. Талалаев. (1997). Control of SiC growth and graphitization in sublimation sandwich system. Materials Science and Engineering B. 46(1-3). 340–344. 5 indexed citations
20.
Buschmann, J., T. Koritsánszky, M.S. Ramm, & Peter Luger. (1996). Experimental charge density ofDL-serine andL-serine. Acta Crystallographica Section A Foundations of Crystallography. 52(a1). C346–C346. 1 indexed citations

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