M.G. Ramm

1.0k total citations
25 papers, 666 citations indexed

About

M.G. Ramm is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Ceramics and Composites. According to data from OpenAlex, M.G. Ramm has authored 25 papers receiving a total of 666 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 7 papers in Ceramics and Composites. Recurrent topics in M.G. Ramm's work include Silicon Carbide Semiconductor Technologies (17 papers), GaN-based semiconductor devices and materials (11 papers) and Advanced ceramic materials synthesis (7 papers). M.G. Ramm is often cited by papers focused on Silicon Carbide Semiconductor Technologies (17 papers), GaN-based semiconductor devices and materials (11 papers) and Advanced ceramic materials synthesis (7 papers). M.G. Ramm collaborates with scholars based in Russia, Germany and Canada. M.G. Ramm's co-authors include E. N. Mokhov, A. D. Roenkov, Yu. A. Vodakov, Yu.N. Makarov, A.S. Segal, S. Yu. Karpov, H. Helava, T. Yu. Chemekova, M.S. Ramm and S. S. Nagalyuk and has published in prestigious journals such as Journal of Crystal Growth, physica status solidi (b) and Materials Science and Engineering B.

In The Last Decade

M.G. Ramm

24 papers receiving 634 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.G. Ramm Russia 16 432 319 186 151 134 25 666
Yu. A. Vodakov Russia 15 445 1.0× 230 0.7× 167 0.9× 89 0.6× 135 1.0× 29 619
A.S. Segal Russia 15 292 0.7× 435 1.4× 223 1.2× 143 0.9× 64 0.5× 38 625
Yuri Makarov Russia 11 325 0.8× 304 1.0× 205 1.1× 154 1.0× 84 0.6× 55 616
M.S. Ramm Russia 18 472 1.1× 227 0.7× 135 0.7× 73 0.5× 185 1.4× 50 670
J. Wollweber Germany 14 346 0.8× 413 1.3× 244 1.3× 213 1.4× 54 0.4× 50 677
J. Carlos Rojo United States 13 196 0.5× 362 1.1× 248 1.3× 156 1.0× 31 0.2× 31 559
J. Kräußlich Germany 14 364 0.8× 148 0.5× 293 1.6× 114 0.8× 56 0.4× 39 590
G. Kästner Germany 18 383 0.9× 249 0.8× 250 1.3× 200 1.3× 43 0.3× 44 706
R.A. Youngman United States 11 231 0.5× 341 1.1× 488 2.6× 207 1.4× 275 2.1× 23 778
Jonathan H. Harris United States 5 114 0.3× 160 0.5× 173 0.9× 99 0.7× 99 0.7× 6 356

Countries citing papers authored by M.G. Ramm

Since Specialization
Citations

This map shows the geographic impact of M.G. Ramm's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.G. Ramm with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.G. Ramm more than expected).

Fields of papers citing papers by M.G. Ramm

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.G. Ramm. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.G. Ramm. The network helps show where M.G. Ramm may publish in the future.

Co-authorship network of co-authors of M.G. Ramm

This figure shows the co-authorship network connecting the top 25 collaborators of M.G. Ramm. A scholar is included among the top collaborators of M.G. Ramm based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.G. Ramm. M.G. Ramm is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mokhov, E. N., Albert Wolfson, S. S. Nagalyuk, et al.. (2013). Sublimation Growth of Bulk AlN Crystals on SiC Seeds. Materials science forum. 740-742. 95–98. 3 indexed citations
2.
Chemekova, T. Yu., E. N. Mokhov, S. S. Nagalyuk, et al.. (2008). Sublimation growth of 2 inch diameter bulk AlN crystals. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1612–1614. 40 indexed citations
3.
Tuomisto, Filip, T. Yu. Chemekova, Yu.N. Makarov, et al.. (2008). Characterization of bulk AlN crystals with positron annihilation spectroscopy. Journal of Crystal Growth. 310(17). 3998–4001. 27 indexed citations
4.
Helava, H., Steven J. Davis, Gabriela Huminic, et al.. (2007). Growth of bulk aluminum nitride crystals. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2281–2284. 9 indexed citations
5.
Makarov, Yu.N., T. Yu. Chemekova, E. N. Mokhov, et al.. (2007). Experimental and theoretical analysis of sublimation growth of AlN bulk crystals. Journal of Crystal Growth. 310(5). 881–886. 56 indexed citations
6.
Karpov, S. Yu., M.S. Ramm, E. N. Mokhov, et al.. (2004). Faceted Growth of SiC Bulk Crystals. Materials science forum. 457-460. 63–66. 2 indexed citations
7.
Mokhov, E. N., et al.. (2004). Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals. Materials science forum. 457-460. 1545–1548. 3 indexed citations
8.
Mokhov, E. N., M.G. Ramm, A. D. Roenkov, et al.. (2003). Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation. Materials science forum. 433-436. 29–32. 7 indexed citations
9.
Müller, St.G., Dieter Hofmann, E. N. Mokhov, et al.. (2002). Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method. 88 87. 219–222. 1 indexed citations
10.
Karpov, S. Yu., Yu.N. Makarov, E. N. Mokhov, et al.. (2000). Analysis of sublimation growth of bulk SiC crystals in tantalum container. Journal of Crystal Growth. 211(1-4). 347–351. 38 indexed citations
11.
Segal, A.S., S. Yu. Karpov, Yu.N. Makarov, et al.. (2000). On mechanisms of sublimation growth of AlN bulk crystals. Journal of Crystal Growth. 211(1-4). 68–72. 56 indexed citations
12.
Segal, A.S., S. Yu. Karpov, Yu.N. Makarov, et al.. (1999). Transport phenomena in sublimation growth of SiC bulk crystals. Materials Science and Engineering B. 61-62. 40–43. 21 indexed citations
13.
Karpov, S. Yu., Yu.N. Makarov, E. N. Mokhov, et al.. (1999). Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere. physica status solidi (a). 176(1). 435–438. 17 indexed citations
14.
Ramm, M.S., E. N. Mokhov, M.G. Ramm, et al.. (1999). Optimization of sublimation growth of SiC bulk crystals using modeling. Materials Science and Engineering B. 61-62. 107–112. 31 indexed citations
15.
Baranov, P. G., E. N. Mokhov, M.G. Ramm, et al.. (1998). Current status of GaN crystal growth by sublimation sandwich technique. MRS Internet Journal of Nitride Semiconductor Research. 3. 19 indexed citations
16.
Mokhov, E. N., M.G. Ramm, M.S. Ramm, et al.. (1998). Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container. Materials science forum. 264-268. 61–64. 22 indexed citations
17.
Vodakov, Yu. A., E. N. Mokhov, M.G. Ramm, et al.. (1997). Sublimation Sandwich Growth of Free Standing GaN Crystals. MRS Proceedings. 482. 3 indexed citations
18.
Mokhov, E. N., M.G. Ramm, A. D. Roenkov, & Yu. A. Vodakov. (1997). SiC growth in tantalum containers by sublimation sandwich method. Journal of Crystal Growth. 181(3). 254–258. 8 indexed citations
19.
Mokhov, E. N., M.G. Ramm, A. D. Roenkov, & Yu. A. Vodakov. (1997). Growth of silicon carbide bulk crystals by the sublimation sandwich method. Materials Science and Engineering B. 46(1-3). 317–323. 15 indexed citations
20.
Vodakov, Yu. A., E. N. Mokhov, M.G. Ramm, & A. D. Roenkov. (1979). Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum. Kristall und Technik. 14(6). 729–740. 89 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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