Masatoshi Kanaya

847 total citations
27 papers, 689 citations indexed

About

Masatoshi Kanaya is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Masatoshi Kanaya has authored 27 papers receiving a total of 689 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 8 papers in Ceramics and Composites and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Masatoshi Kanaya's work include Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor materials and devices (11 papers) and Advanced ceramic materials synthesis (8 papers). Masatoshi Kanaya is often cited by papers focused on Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor materials and devices (11 papers) and Advanced ceramic materials synthesis (8 papers). Masatoshi Kanaya collaborates with scholars based in Japan and Russia. Masatoshi Kanaya's co-authors include Jun Takahashi, Noboru Ohtani, Masakazu Katsuno, Hirokatsu Yashiro, Akihiro Moritani, Takashi Aigo, Tatsuo Fujimoto, Hiroshi Tsuge, Takeshi Nishikawa and Yoshihiko Kanemitsu and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Masatoshi Kanaya

27 papers receiving 670 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Masatoshi Kanaya Japan 15 620 139 136 125 102 27 689
Hirokatsu Yashiro Japan 15 620 1.0× 143 1.0× 129 0.9× 142 1.1× 87 0.9× 49 699
St.G. Müller Germany 12 553 0.9× 68 0.5× 123 0.9× 128 1.0× 110 1.1× 23 631
D. Henshall United States 10 478 0.8× 61 0.4× 78 0.6× 115 0.9× 77 0.8× 11 522
Edward Sanchez United States 18 671 1.1× 139 1.0× 172 1.3× 87 0.7× 107 1.0× 72 763
S. Ha United States 14 1.1k 1.9× 212 1.5× 320 2.4× 124 1.0× 75 0.7× 21 1.2k
M. H. Hong United States 9 319 0.5× 70 0.5× 105 0.8× 117 0.9× 120 1.2× 18 452
Masahiro Nagano Japan 14 670 1.1× 132 0.9× 203 1.5× 43 0.3× 97 1.0× 46 724
Jason R. Jenny United States 18 882 1.4× 243 1.7× 199 1.5× 139 1.1× 281 2.8× 31 1.1k
S. Nishino Japan 11 403 0.7× 121 0.9× 62 0.5× 54 0.4× 135 1.3× 39 493
Tatsuo Fujimoto Japan 15 526 0.8× 180 1.3× 140 1.0× 127 1.0× 85 0.8× 57 643

Countries citing papers authored by Masatoshi Kanaya

Since Specialization
Citations

This map shows the geographic impact of Masatoshi Kanaya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masatoshi Kanaya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masatoshi Kanaya more than expected).

Fields of papers citing papers by Masatoshi Kanaya

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masatoshi Kanaya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masatoshi Kanaya. The network helps show where Masatoshi Kanaya may publish in the future.

Co-authorship network of co-authors of Masatoshi Kanaya

This figure shows the co-authorship network connecting the top 25 collaborators of Masatoshi Kanaya. A scholar is included among the top collaborators of Masatoshi Kanaya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masatoshi Kanaya. Masatoshi Kanaya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Takahashi, Yoshikazu, Y. Nabara, T. Hemmi, et al.. (2014). Non-Destructive Examination of Jacket Sections for ITER Central Solenoid Conductors. IEEE Transactions on Applied Superconductivity. 25(3). 1–4. 5 indexed citations
2.
Kikuchi, Takeshi, et al.. (2002). Electron Field Emission from Sulfur Ion Implanted Homoepitaxial Diamond Films. Japanese Journal of Applied Physics. 41(Part 1, No. 6A). 3924–3925. 4 indexed citations
3.
Masuda, Kaori, Masahiro Yamamoto, Masatoshi Kanaya, & Yoshihiko Kanemitsu. (2002). Fabrication of Ge nanocrystals in SiO2 films by ion implantation: control of size and position. Journal of Non-Crystalline Solids. 299-302. 1079–1083. 17 indexed citations
4.
Aigo, Takashi, Masatoshi Kanaya, Masakazu Katsuno, Hirokatsu Yashiro, & Noboru Ohtani. (2001). Nitrogen Incorporation Mechanism and Dependence of Site-Competition Epitaxy on the Total Gas Flow Rate for 6H-SiC Epitaxial Layers Grown by Chemical Vapor Deposition. Japanese Journal of Applied Physics. 40(4R). 2155–2155. 6 indexed citations
5.
Katsuno, Masakazu, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro, & Masatoshi Kanaya. (2000). Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry. Materials science forum. 338-342. 493–496. 1 indexed citations
6.
Nohda, Tomoyuki, et al.. (2000). Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films. Japanese Journal of Applied Physics. 39(9R). 5063–5063. 3 indexed citations
7.
Katsuno, Masakazu, Noboru Ohtani, Jun Takahashi, Hirokatsu Yashiro, & Masatoshi Kanaya. (1999). Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation. Japanese Journal of Applied Physics. 38(8R). 4661–4661. 83 indexed citations
8.
Ohtani, Noboru, Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro, & Masatoshi Kanaya. (1999). Evolution of macrosteps on6H−SiC(0001): Impurity-induced morphological instability of step trains. Physical review. B, Condensed matter. 59(7). 4592–4595. 41 indexed citations
9.
Ohtani, Noboru, Jun Takahashi, Masakazu Katsuno, Hirokatsu Yashiro, & Masatoshi Kanaya. (1998). Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide. MRS Proceedings. 510. 8 indexed citations
10.
Katsuno, Masakazu, Noboru Ohtani, J. Takahashi, et al.. (1998). Etching Kinetics of α-SiC Single Crystals by Molten KOH. Materials science forum. 264-268. 837–840. 11 indexed citations
11.
Ohtani, Noboru, Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro, & Masatoshi Kanaya. (1998). Impurity incorporation kinetics during modified-Lely growth of SiC. Journal of Applied Physics. 83(8). 4487–4490. 24 indexed citations
12.
Ohtani, Noboru, Masakazu Katsuno, J. Takahashi, et al.. (1998). Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC. Materials science forum. 264-268. 49–52. 5 indexed citations
13.
Ohtani, Noboru, Masakazu Katsuno, Jun Takahashi, Hirokatsu Yashiro, & Masatoshi Kanaya. (1998). Stepped structure on the {0001} facet plane of α-SiC. Surface Science. 398(3). L303–L307. 14 indexed citations
14.
Ohtani, Noboru, Jun Takahashi, Masakazu Katsuno, Hirokatsu Yashiro, & Masatoshi Kanaya. (1998). Development of large single-crystal SiC substrates. Electronics and Communications in Japan (Part II Electronics). 81(6). 8–19. 15 indexed citations
15.
Kanaya, Masatoshi, Hirokatsu Yashiro, Noboru Ohtani, et al.. (1998). Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiC. Materials science forum. 264-268. 359–362. 3 indexed citations
16.
Takahashi, Jun, Noboru Ohtani, & Masatoshi Kanaya. (1996). Structural defects in α-SiC single crystals grown by the modified-Lely method. Journal of Crystal Growth. 167(3-4). 596–606. 56 indexed citations
17.
Nishikawa, Takeshi, et al.. (1996). Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC. Japanese Journal of Applied Physics. 35(4R). 2240–2240. 35 indexed citations
18.
Takahashi, Jun, et al.. (1994). Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane. Journal of Crystal Growth. 135(1-2). 61–70. 127 indexed citations
19.
Kanaya, Masatoshi, et al.. (1991). Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction. Applied Physics Letters. 58(1). 56–58. 86 indexed citations
20.
Kaneda, Shigeo, et al.. (1986). The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating. Japanese Journal of Applied Physics. 25(9R). 1307–1307. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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