M.-C. Jeng

1.5k total citations · 2 hit papers
20 papers, 1.0k citations indexed

About

M.-C. Jeng is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M.-C. Jeng has authored 20 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in M.-C. Jeng's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Silicon Carbide Semiconductor Technologies (6 papers). M.-C. Jeng is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Silicon Carbide Semiconductor Technologies (6 papers). M.-C. Jeng collaborates with scholars based in United States, Italy and Taiwan. M.-C. Jeng's co-authors include P.K. Ko, D.L. Scharfetter, B.J. Sheu, Chenming Hu, P.K. Ko, T.Y. Chan, Jiawei Huang, Yuhua Cheng, J.E. Chung and J.E. Moon and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

M.-C. Jeng

18 papers receiving 953 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

BSIM: Berkeley short-channel IGFET model for MOS transistors

1987 407 citations B.J. Sheu, D.L. Scharfetter et al. IEEE Journal of Solid-State Circuits profile →
Threshold voltage model for deep-submicrometer MOSFETs

1993 361 citations Chenming Hu, Jiawei Huang et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M.-C. Jeng United States	9	1.0k	130	80	63	27	20	1.0k
S. Mudanai United States	16	809 0.8×	78 0.6×	77 1.0×	92 1.5×	51 1.9×	37	835
Gareth Roy United Kingdom	15	880 0.9×	93 0.7×	82 1.0×	77 1.2×	20 0.7×	33	911
U. Langmann Germany	16	859 0.8×	247 1.9×	58 0.7×	69 1.1×	18 0.7×	78	875
Andrei Vladimirescu France	13	844 0.8×	169 1.3×	69 0.9×	99 1.6×	16 0.6×	40	902
C.T. Chuang United States	16	942 0.9×	239 1.8×	59 0.7×	116 1.8×	36 1.3×	112	1000
Ching-Te Chuang Taiwan	20	1.2k 1.2×	173 1.3×	188 2.4×	42 0.7×	51 1.9×	101	1.3k
N. Lindert United States	12	790 0.8×	111 0.9×	46 0.6×	45 0.7×	45 1.7×	16	823
B. Davari United States	18	1.3k 1.2×	199 1.5×	111 1.4×	197 3.1×	63 2.3×	67	1.3k
C. Pacha Germany	13	619 0.6×	107 0.8×	79 1.0×	114 1.8×	14 0.5×	49	652
Hanwool Jeong South Korea	13	466 0.5×	77 0.6×	79 1.0×	37 0.6×	25 0.9×	50	485

Countries citing papers authored by M.-C. Jeng

Since Specialization

Citations

This map shows the geographic impact of M.-C. Jeng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.-C. Jeng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.-C. Jeng more than expected).

Fields of papers citing papers by M.-C. Jeng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.-C. Jeng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.-C. Jeng. The network helps show where M.-C. Jeng may publish in the future.

Co-authorship network of co-authors of M.-C. Jeng

This figure shows the co-authorship network connecting the top 25 collaborators of M.-C. Jeng. A scholar is included among the top collaborators of M.-C. Jeng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.-C. Jeng. M.-C. Jeng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Lin, Yu‐Ling, et al.. (2012). An extended de-embedding method for on-wafer components. 2. 166–168. 3 indexed citations

Jeng, M.-C., et al.. (2005). Direct DC to RF Conversion by Picosecond Optoelectronic Switching. 84. 540–541. 3 indexed citations

Lin, Yang, et al.. (2004). Fabrication and integration of high performance mixed signal and RF passive components in 0.13/spl mu/m Cu BEOL technologies. 175–178 vol.1. 4 indexed citations

Chung, J.E., M.-C. Jeng, J.E. Moon, P.K. Ko, & C. Hu. (2003). Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs. 92–97.

Jeng, M.-C., P.K. Ko, & C. Hu. (2003). A deep-submicrometer MOSFET model for analog/digital circuit simulations. ed 31. 114–117. 5 indexed citations

Chung, J.E., et al.. (2003). Hot-electron currents in deep-submicrometer MOSFETs. 200–203. 7 indexed citations

Jeng, M.-C., et al.. (2003). Design guidelines for deep-submicrometer MOSFETs. 32. 386–389.

Huang, Jiawei, et al.. (2002). A robust physical and predictive model for deep-submicrometer MOS circuit simulation. 14.2.1–14.2.4. 6 indexed citations

Wang, Mu‐Chun, et al.. (2002). ESD protection for the tolerant I/O circuits using PESD implantation. Journal of Electrostatics. 54(3-4). 293–300. 11 indexed citations

10.

Huang, Jiawei, et al.. (1996). Temperature effects on MOSFET driving capability and voltage gain. Solid-State Electronics. 39(5). 699–701. 5 indexed citations

11.

Hu, Chenming, Jiawei Huang, T.Y. Chan, et al.. (1993). Threshold voltage model for deep-submicrometer MOSFETs. IEEE Transactions on Electron Devices. 40(1). 86–95. 361 indexed citations breakdown →

12.

Chung, J.E., M.-C. Jeng, J.E. Moon, P.K. Ko, & C. Hu. (1991). Performance and reliability design issues for deep-submicrometer MOSFETs. IEEE Transactions on Electron Devices. 38(3). 545–554. 40 indexed citations

13.

Chung, J.E., M.-C. Jeng, J.E. Moon, P.K. Ko, & Chenming Hu. (1990). Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs. IEEE Transactions on Electron Devices. 37(7). 1651–1657. 73 indexed citations

14.

Jeng, M.-C., J.E. Chung, P.K. Ko, & Chenming Hu. (1990). The effects of source/drain resistance on deep submicrometer device performance. IEEE Transactions on Electron Devices. 37(11). 2408–2410. 11 indexed citations

15.

Chung, Jong Won, M.-C. Jeng, J.E. Moon, P.K. Ko, & Chenming Hu. (1989). Low-Voltage Hot-Electron Currents and Degradation in Deep-Submicrometer MOSFETs. Reliability physics. 92–97. 2 indexed citations

16.

Chung, J.E., et al.. (1989). Intrinsic transconductance extraction for deep-submicrometer MOSFETs. IEEE Transactions on Electron Devices. 36(1). 140–142. 11 indexed citations

17.

Chung, J.E., M.-C. Jeng, J.E. Moon, et al.. (1988). Deep-submicrometer MOS device fabrication using a photoresist-ashing technique. IEEE Electron Device Letters. 9(4). 186–188. 82 indexed citations

18.

Sheu, B.J., D.L. Scharfetter, P.K. Ko, & M.-C. Jeng. (1987). BSIM: Berkeley short-channel IGFET model for MOS transistors. IEEE Journal of Solid-State Circuits. 22(4). 558–566. 407 indexed citations breakdown →

19.

Jeng, M.-C., J.E. Chung, A.T. Wu, et al.. (1987). Performance and hot-electron reliability of deep-submicron MOSFET's. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 710–713. 11 indexed citations

20.

Jeng, M.-C., et al.. (1984). Direct Dc To Rf Conversion By Picosecond Optoelectronic Switching. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 477. 101–101. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact