D.L. Scharfetter

4.1k total citations · 2 hit papers
44 papers, 3.0k citations indexed

About

D.L. Scharfetter is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, D.L. Scharfetter has authored 44 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 6 papers in Astronomy and Astrophysics. Recurrent topics in D.L. Scharfetter's work include Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (10 papers). D.L. Scharfetter is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (11 papers) and Silicon Carbide Semiconductor Technologies (10 papers). D.L. Scharfetter collaborates with scholars based in Japan, United States and Italy. D.L. Scharfetter's co-authors include H.K. Gummel, B.J. Sheu, M.-C. Jeng, P.K. Ko, R.L. Johnston, B.C. DeLoach, D. J. Bartelink, Thomas E. Seidel, H.C. Poon and Jochen Wirth and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

D.L. Scharfetter

38 papers receiving 2.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Large-signal analysis of a silicon Read diode oscillator

1969 1.7k citations D.L. Scharfetter, H.K. Gummel IEEE Transactions on Electron Devices profile →
BSIM: Berkeley short-channel IGFET model for MOS transistors

1987 407 citations B.J. Sheu, D.L. Scharfetter et al. IEEE Journal of Solid-State Circuits profile →

Peers

Countries citing papers authored by D.L. Scharfetter

Since Specialization

Citations

This map shows the geographic impact of D.L. Scharfetter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.L. Scharfetter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.L. Scharfetter more than expected).

Fields of papers citing papers by D.L. Scharfetter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.L. Scharfetter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.L. Scharfetter. The network helps show where D.L. Scharfetter may publish in the future.

Co-authorship network of co-authors of D.L. Scharfetter

This figure shows the co-authorship network connecting the top 25 collaborators of D.L. Scharfetter. A scholar is included among the top collaborators of D.L. Scharfetter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.L. Scharfetter. D.L. Scharfetter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Temperature dependence of substrate current and hot carrier-induced degradation at low drain bias 2002 ·(unknown), M. Alavi, D.L. Scharfetter	39
2	Numerical Techniques on Enhancing Robustness for Stress-Dependent Oxidation Simulation Using Finite Element Method in SUPREM-IV 1992 ·Transactions of the Institute of Electronics, Information and Communication Engineers ·(unknown), (unknown), (unknown), A. Raefsky, D.L. Scharfetter, (unknown)	0
3	BSIM: Berkeley short-channel IGFET model for MOS transistors breakdown → 1987 ·IEEE Journal of Solid-State Circuits ·B.J. Sheu, D.L. Scharfetter, P.K. Ko, M.-C. Jeng	407
4	A compact IGFET charge model 1984 ·IEEE Transactions on Circuits and Systems ·B.J. Sheu, D.L. Scharfetter, Chenming Hu, D.O. Pederson	25
5	New IGFET short-channel threshold voltage model 1981 ·(unknown), J.D. Meindl, D.L. Scharfetter	13
6	A novel TRAPATT oscillator design 1970 ·Proceedings of the IEEE ·W.J. Evans, Thomas E. Seidel, D.L. Scharfetter	8
7	Characterization of avalanche diode TRAPATT oscillators 1970 ·IEEE Transactions on Electron Devices ·W.J. Evans, D.L. Scharfetter	17
8	Power-Frequency Characteristics of the TRAPATT Diode Mode of High Efficiency Power Generation in Germanium and Silicon Avalanche Diodes 1970 ·Bell System Technical Journal ·D.L. Scharfetter	14
9	High injection in epitaxial transistors 1969 ·IEEE Transactions on Electron Devices ·H.C. Poon, H.K. Gummel, D.L. Scharfetter	38
10	Analysis of the I(V) characteristics of p⁺-n-π-p⁺structures for the determination of hole velocity in silicon 1969 ·IEEE Transactions on Electron Devices ·D.L. Scharfetter, Thomas E. Seidel	1
11	High efficiency operation of IMPATT diodes 1968 ·D.L. Scharfetter	4
12	High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency 1968 ·Proceedings of the IEEE ·R.L. Johnston, D.L. Scharfetter, D. J. Bartelink	57
13	The Analysis of Radiation Effects in Semiconductor Junction Devices 1967 ·IEEE Transactions on Nuclear Science ·C. W. Gwyn, D.L. Scharfetter, Jochen Wirth	84
14	Dependence of hole velocity upon electric field and hole density for p-type silicon 1967 ·Journal of Physics and Chemistry of Solids ·Thomas E. Seidel, D.L. Scharfetter	31
15	Depletion-Layer Capacitance of p+n Step Junctions 1967 ·Journal of Applied Physics ·H.K. Gummel, D.L. Scharfetter	65
16	Design of Read diode oscillators 1966 ·IEEE Transactions on Electron Devices ·H.K. Gummel, D.L. Scharfetter	2
17	Avalanche-region characterization of Read diodes 1966 ·IEEE Transactions on Electron Devices ·H.K. Gummel, D.L. Scharfetter	1
18	Minority carrier injection and charge storage in epitaxial Schottky barrier diodes 1965 ·Solid-State Electronics ·D.L. Scharfetter	112
19	A unified treatment of semiconductor boundary value problems 1963 ·IEEE Transactions on Electron Devices ·D.L. Scharfetter, (unknown), A.G. Jordan	8
20	A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices 1963 ·American Journal of Physics ·A.G. Jordan, (unknown), D.L. Scharfetter	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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