J.M. Higman

715 total citations
35 papers, 387 citations indexed

About

J.M. Higman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computer Networks and Communications. According to data from OpenAlex, J.M. Higman has authored 35 papers receiving a total of 387 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computer Networks and Communications. Recurrent topics in J.M. Higman's work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). J.M. Higman is often cited by papers focused on Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). J.M. Higman collaborates with scholars based in United States, Italy and Netherlands. J.M. Higman's co-authors include K. Hess, R.W. Dutton, David C. Burnett, A. Haggag, G. C. Abeln, Gary A. Anderson, P. Douglas Yoder, C.T. Swift, J. Bude and T. K. Higman and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.M. Higman

32 papers receiving 364 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.M. Higman United States 12 356 100 37 30 22 35 387
H. Iizuka Japan 11 327 0.9× 58 0.6× 42 1.1× 12 0.4× 22 1.0× 27 343
T. Bucelot United States 14 336 0.9× 69 0.7× 25 0.7× 42 1.4× 13 0.6× 30 375
H. DeMan Belgium 6 294 0.8× 126 1.3× 34 0.9× 29 1.0× 16 0.7× 11 324
Renichi Yamada Japan 11 376 1.1× 71 0.7× 28 0.8× 21 0.7× 17 0.8× 32 406
Y. Taur United States 10 239 0.7× 50 0.5× 18 0.5× 10 0.3× 13 0.6× 19 264
Jeffrey B. Johnson United States 12 415 1.2× 41 0.4× 21 0.6× 32 1.1× 11 0.5× 49 431
S. Jallepalli United States 10 474 1.3× 130 1.3× 36 1.0× 9 0.3× 8 0.4× 28 494
S. Ramey United States 15 684 1.9× 115 1.1× 45 1.2× 44 1.5× 11 0.5× 50 732
J. Ku Taiwan 10 304 0.9× 33 0.3× 67 1.8× 16 0.5× 57 2.6× 26 315
M. Lorenzini Belgium 10 264 0.7× 32 0.3× 36 1.0× 12 0.4× 42 1.9× 34 305

Countries citing papers authored by J.M. Higman

Since Specialization
Citations

This map shows the geographic impact of J.M. Higman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.M. Higman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.M. Higman more than expected).

Fields of papers citing papers by J.M. Higman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.M. Higman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.M. Higman. The network helps show where J.M. Higman may publish in the future.

Co-authorship network of co-authors of J.M. Higman

This figure shows the co-authorship network connecting the top 25 collaborators of J.M. Higman. A scholar is included among the top collaborators of J.M. Higman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.M. Higman. J.M. Higman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mann, R., et al.. (2019). An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27(8). 1819–1827.
2.
Hopkins, John, et al.. (2018). A Simplified Yield Model for SRAM Repair in Advanced Technology. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26(11). 2494–2503. 2 indexed citations
3.
Burnett, David C., et al.. (2015). SRAM Vmax stability considerations. 6A.6.1–6A.6.5. 3 indexed citations
4.
Haggag, A., David C. Burnett, G. C. Abeln, et al.. (2006). Realistic Projections of Product Fails from NBTI and TDDB. 541–544. 19 indexed citations
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Higman, J.M., et al.. (2002). Statistical modeling techniques: FPV vs. BPV. 71–75. 6 indexed citations
9.
Yu, Tat-Kwan, et al.. (2002). An EEPROM model for low power circuit design and simulation. 157–160. 4 indexed citations
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Venturi, F., A. Abramo, E. Sangiorgi, et al.. (2002). An isotropic best-fitting band model for electron and hole transport in silicon. 503–506.
13.
Chen, Weiming, et al.. (1998). A new SONOS memory using source-side injection for programming. IEEE Electron Device Letters. 19(7). 253–255. 37 indexed citations
14.
Bailey, Daniel W. & J.M. Higman. (1995). A Discretized k-Space Method for Charge Transport in Semiconductors. Journal of Computational Physics. 120(1). 117–127. 1 indexed citations
15.
Kim, K. W., et al.. (1993). Simplified microscopic model for electron–optical-phonon interactions in quantum wells. Physical review. B, Condensed matter. 48(19). 14671–14674. 20 indexed citations
16.
Abramo, A., F. Venturi, E. Sangiorgi, J.M. Higman, & B. Riccò. (1993). A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 12(9). 1327–1336. 21 indexed citations
17.
Higman, J.M. & M. Orłowski. (1993). Monte Carlo simulation of deep-submicron SOI and conventional nMOSFET hot-electron-induced degradation. 34. 48–52. 2 indexed citations
18.
Higman, T. K., J.M. Higman, M.A. Emanuel, K. Hess, & J. J. Coleman. (1987). Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes. Journal of Applied Physics. 62(4). 1495–1499. 22 indexed citations
19.
Dutton, R.W., et al.. (1987). VIB-3 accurate analysis of impact ionization effects in submicrometer MOSFET devices. IEEE Transactions on Electron Devices. 34(11). 2385–2385. 5 indexed citations
20.
Higman, J.M. & K. Hess. (1986). Comment on the use of the electron temperature concept for nonlinear transport problems in semiconductor p-n junctions. Solid-State Electronics. 29(9). 915–918. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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