L. Varani

860 total citations
71 papers, 551 citations indexed

About

L. Varani is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, L. Varani has authored 71 papers receiving a total of 551 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 56 papers in Atomic and Molecular Physics, and Optics and 12 papers in Spectroscopy. Recurrent topics in L. Varani's work include Semiconductor Quantum Structures and Devices (46 papers), Terahertz technology and applications (32 papers) and Advancements in Semiconductor Devices and Circuit Design (32 papers). L. Varani is often cited by papers focused on Semiconductor Quantum Structures and Devices (46 papers), Terahertz technology and applications (32 papers) and Advancements in Semiconductor Devices and Circuit Design (32 papers). L. Varani collaborates with scholars based in France, Italy and Lithuania. L. Varani's co-authors include P. Shiktorov, E. Starikov, L. Reggiani, V. Gruz̆inskis, L. Reggiani, J. C. Vaissière, C. Palermo, T. González, T. Kühn and S. Pérez and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. Varani

68 papers receiving 533 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Varani France 15 452 381 88 83 54 71 551
S. Pérez Spain 13 347 0.8× 299 0.8× 177 2.0× 150 1.8× 55 1.0× 75 486
R.J.S. Pedersen Denmark 14 594 1.3× 256 0.7× 114 1.3× 56 0.7× 35 0.6× 69 752
D. G. Pavel’ev Russia 15 402 0.9× 498 1.3× 71 0.8× 160 1.9× 21 0.4× 35 562
E. P. Dodin Russia 9 250 0.6× 376 1.0× 42 0.5× 42 0.5× 31 0.6× 23 401
Yu. Koschurinov Russia 13 350 0.8× 459 1.2× 61 0.7× 125 1.5× 18 0.3× 29 508
А.М. Клушин Germany 14 381 0.8× 314 0.8× 356 4.0× 110 1.3× 34 0.6× 74 602
E. Schomburg Germany 18 569 1.3× 762 2.0× 106 1.2× 208 2.5× 40 0.7× 46 834
M.J. Mondry United States 11 507 1.1× 421 1.1× 113 1.3× 86 1.0× 50 0.9× 27 595
Youbin Yu China 15 215 0.5× 728 1.9× 54 0.6× 21 0.3× 107 2.0× 53 771
T. Kutsuwa Japan 8 294 0.7× 408 1.1× 42 0.5× 87 1.0× 100 1.9× 20 563

Countries citing papers authored by L. Varani

Since Specialization
Citations

This map shows the geographic impact of L. Varani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Varani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Varani more than expected).

Fields of papers citing papers by L. Varani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Varani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Varani. The network helps show where L. Varani may publish in the future.

Co-authorship network of co-authors of L. Varani

This figure shows the co-authorship network connecting the top 25 collaborators of L. Varani. A scholar is included among the top collaborators of L. Varani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Varani. L. Varani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Palermo, C., et al.. (2016). Plasmonic noise of field-effect transistors operating at terahertz frequencies. Journal of Statistical Mechanics Theory and Experiment. 2016(5). 54020–54020. 2 indexed citations
2.
Palermo, C., H. Marinchio, P. Shiktorov, et al.. (2014). TeraHertz electronic noise in field-effect transistors. Journal of Computational Electronics. 14(1). 87–93. 2 indexed citations
3.
Varani, L., et al.. (2014). Current response and gain in plasmonic vertical diodes in the presence of electrical and optical THz excitations. Physica B Condensed Matter. 456. 21–25. 1 indexed citations
4.
Blin, S., et al.. (2013). Room-temperature terahertz heterodyne mixing in GaAs commercial transistors. 1–2. 3 indexed citations
5.
Sharma, Rajesh, J. Torres, P. Nouvel, et al.. (2013). Terahertz transmission and effective gain measurement of two-dimensional electron gas. physica status solidi (a). 210(7). 1454–1458. 2 indexed citations
6.
Ašmontas, S., P. Shiktorov, E. Starikov, et al.. (2010). Plasma waves induced by the optical beating in HEMT channels as an expected source of TeraHertz radiation generation. AIP conference proceedings. 211–212. 1 indexed citations
7.
Marinchio, H., J. Torres, P. Nouvel, et al.. (2010). Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor. Applied Physics Letters. 96(1). 18 indexed citations
8.
Starikov, E., P. Shiktorov, L. Varani, et al.. (2009). The consequence of continuous current branching on current-noise spectra in field-effect and high-electron mobility transistors. AIP conference proceedings. 267–272. 1 indexed citations
9.
Marinchio, H., C. Palermo, J. Torres, et al.. (2009). Hydrodynamic modeling of optically excited terahertz plasma oscillations in nanometric field effect transistors. Applied Physics Letters. 94(19). 21 indexed citations
10.
Starikov, E., P. Shiktorov, V. Gruz̆inskis, et al.. (2008). Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission. Journal of Physics Condensed Matter. 20(38). 384209–384209. 18 indexed citations
11.
Shiktorov, P., E. Starikov, V. Gruz̆inskis, L. Varani, & L. Reggiani. (2008). Coherent Terahertz Radiation Generation Assisted by Low-Temperature Optical Phonon Emission: Achievements and Perspectives. Acta Physica Polonica A. 113(3). 795–802.
12.
Varani, L., C. Palermo, J.‐F. Millithaler, et al.. (2006). Numerical modeling of TeraHertz electronic devices. Journal of Computational Electronics. 5(2-3). 71–77. 8 indexed citations
13.
Shiktorov, P., E. Starikov, T. González, et al.. (2002). Langevin forces and generalized transfer fields for noise modelling in deep submicron devices. 36–37. 1 indexed citations
14.
Amechnoue, Khalid, et al.. (2000). Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon. Journal of Applied Physics. 88(2). 838–841. 1 indexed citations
15.
Brunetti, R., L. Varani, J. C. Vaissière, et al.. (1997). Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures. Semiconductor Science and Technology. 12(11). 1511–1513. 3 indexed citations
16.
Vaissière, J. C., et al.. (1996). Nonequilibrium phonon effects on the transient high-field transport regime in InP. Physical review. B, Condensed matter. 53(15). 9886–9894. 7 indexed citations
17.
Gruz̆inskis, V., E. Starikov, P. Shiktorov, et al.. (1994). Electronic noise and impedance field of submicron n+nn+InP diode generators. Semiconductor Science and Technology. 9(10). 1843–1848. 5 indexed citations
18.
Starikov, E., et al.. (1993). Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors. Semiconductor Science and Technology. 8(7). 1283–1290. 29 indexed citations
19.
Reggiani, L., L. Varani, & Vladimir Mitin. (1991). First-principle calculation of the recombination cross-section assisted by acoustic phonons at shallow impurities in semiconductors. Il Nuovo Cimento D. 13(5). 647–662. 4 indexed citations
20.
Reggiani, L., L. Varani, J. C. Vaissière, J. P. Nougier, & Vladimir Mitin. (1989). Field-dependent conductivity of lightly doped p-Si at 77 K. Journal of Applied Physics. 66(11). 5404–5408. 9 indexed citations

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