J. P. Nougier

896 total citations
58 papers, 618 citations indexed

About

J. P. Nougier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Statistical and Nonlinear Physics. According to data from OpenAlex, J. P. Nougier has authored 58 papers receiving a total of 618 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 11 papers in Statistical and Nonlinear Physics. Recurrent topics in J. P. Nougier's work include Advancements in Semiconductor Devices and Circuit Design (36 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor Quantum Structures and Devices (13 papers). J. P. Nougier is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (36 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor Quantum Structures and Devices (13 papers). J. P. Nougier collaborates with scholars based in France, Italy and Lithuania. J. P. Nougier's co-authors include J. C. Vaissière, M. Rolland, D. Gasquet, E. Constant, J. Zimmermann, L. Varani, L. Reggiani, P. Shiktorov, Christian Gontrand and E. Starikov and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. P. Nougier

57 papers receiving 588 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. P. Nougier France	14	516	319	77	43	42	58	618
R. Katilius Russia	9	201 0.4×	292 0.9×	39 0.5×	62 1.4×	87 2.1×	29	370
C. Minot France	11	202 0.4×	308 1.0×	54 0.7×	20 0.5×	27 0.6×	41	356
M. Sotoodeh United Kingdom	7	402 0.8×	227 0.7×	38 0.5×	20 0.5×	37 0.9×	18	471
H. Ahmed United Kingdom	9	507 1.0×	674 2.1×	64 0.8×	16 0.4×	135 3.2×	16	735
M. Scholl Germany	11	116 0.2×	140 0.4×	86 1.1×	108 2.5×	20 0.5×	30	431
N. J. Appleyard United Kingdom	10	208 0.4×	446 1.4×	79 1.0×	26 0.6×	103 2.5×	22	500
M. Asche Germany	12	388 0.8×	384 1.2×	137 1.8×	14 0.3×	38 0.9×	67	532
H.‐R. Blank United States	12	292 0.6×	369 1.2×	129 1.7×	34 0.8×	74 1.8×	26	443
Lino Reggiani Italy	12	315 0.6×	244 0.8×	54 0.7×	16 0.4×	12 0.3×	18	383
Gideon Yoffe Australia	13	574 1.1×	285 0.9×	25 0.3×	21 0.5×	20 0.5×	50	624

Countries citing papers authored by J. P. Nougier

Since Specialization

Citations

This map shows the geographic impact of J. P. Nougier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. P. Nougier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. P. Nougier more than expected).

Fields of papers citing papers by J. P. Nougier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. P. Nougier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. P. Nougier. The network helps show where J. P. Nougier may publish in the future.

Co-authorship network of co-authors of J. P. Nougier

This figure shows the co-authorship network connecting the top 25 collaborators of J. P. Nougier. A scholar is included among the top collaborators of J. P. Nougier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. P. Nougier. J. P. Nougier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shiktorov, P., E. Starikov, V. Gruz̆inskis, et al.. (1999). Spatiotemporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme. Applied Physics Letters. 74(5). 723–725. 3 indexed citations

Bonani, Fabrizio, Giovanni Ghione, L. Varani, et al.. (1999). Evaluating the impedance field through several transport models: A comparison. Journal of Applied Physics. 85(4). 2192–2196. 2 indexed citations

Starikov, E., P. Shiktorov, V. Gruz̆inskis, et al.. (1998). Transfer impedance calculations of electronic noise in two-terminal semiconductor structures. Journal of Applied Physics. 83(4). 2052–2066. 9 indexed citations

Brunetti, R., L. Varani, J. C. Vaissière, et al.. (1997). Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures. Semiconductor Science and Technology. 12(11). 1511–1513. 3 indexed citations

Vaissière, J. C., et al.. (1996). Nonequilibrium phonon effects on the transient high-field transport regime in InP. Physical review. B, Condensed matter. 53(15). 9886–9894. 7 indexed citations

Varani, L., J. C. Vaissière, J. P. Nougier, et al.. (1996). A model noise temperature for nonlinear transport in semiconductors. Journal of Applied Physics. 80(9). 5067–5075. 13 indexed citations

Starikov, E., P. Shiktorov, V. Gruz̆inskis, et al.. (1995). Electronic noise of submicron n+nn+ diodes under near-oscillatory macroscopic behaviors. Applied Physics Letters. 66(18). 2361–2363. 9 indexed citations

Varani, L., Lino Reggiani, T. Kühn, et al.. (1993). Number and current fluctuations in submicron semiconductor structures. AIP conference proceedings. 285. 329–332. 1 indexed citations

Kühn, T., et al.. (1991). Field-dependent electronic noise of lightly dopedp-type Si at 77 K. Physical review. B, Condensed matter. 44(3). 1074–1080. 13 indexed citations

10.

Nougier, J. P. & J. C. Vaissière. (1989). Transverse diffusion coefficient and carrier density fluctuation derived from the fluctuation of the state occupancy function in semiconductors. Solid-State Electronics. 32(12). 1901–1904. 1 indexed citations

11.

Reggiani, L., L. Varani, J. C. Vaissière, J. P. Nougier, & Vladimir Mitin. (1989). Field-dependent conductivity of lightly doped p-Si at 77 K. Journal of Applied Physics. 66(11). 5404–5408. 9 indexed citations

12.

Fadel, M., M. Rieger, J. C. Vaissière, J. P. Nougier, & P. Kočevar. (1989). Hot phonon-hot electron coupled Boltzmann equations. Solid-State Electronics. 32(12). 1229–1233. 5 indexed citations

13.

Gasquet, D., et al.. (1988). NOISE OF GaAs DIODES. Le Journal de Physique Colloques. 49(C4). C4–583. 3 indexed citations

14.

Gasquet, D., et al.. (1985). Determination of transport coefficients by transient photoconductivity measurements. Physica B+C. 129(1-3). 524–526. 2 indexed citations

15.

Nougier, J. P., Christian Gontrand, & J. C. Vaissière. (1985). Method for modeling the noise of submicron devices. Physica B+C. 129(1-3). 580–582. 1 indexed citations

16.

Nougier, J. P., J. C. Vaissière, & Christian Gontrand. (1983). Two-Point Correlations of Diffusion Noise Sources of Hot Carriers in Semiconductors. Physical Review Letters. 51(6). 513–516. 20 indexed citations

17.

Nougier, J. P.. (1978). Identity between spreading and noise diffusion coefficients for hot carriers in semiconductors. Applied Physics Letters. 32(10). 671–673. 13 indexed citations

18.

Nougier, J. P., M. Rolland, & D. Gasquet. (1976). Intervalley transfers of hot electrons in silicon below 77 K. Physics Letters A. 56(4). 314–316.

19.

Nougier, J. P., et al.. (1974). Pulsed technique for noise temperature measurement. Journal of Physics E Scientific Instruments. 7(4). 287–290. 4 indexed citations

20.

Nougier, J. P.. (1973). Space charge induced in semiconductors by hot carrier regime. Physics Letters A. 43(5). 451–452. 1 indexed citations

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