L. Rubin

645 total citations
78 papers, 488 citations indexed

About

L. Rubin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, L. Rubin has authored 78 papers receiving a total of 488 indexed citations (citations by other indexed papers that have themselves been cited), including 71 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 21 papers in Computational Mechanics. Recurrent topics in L. Rubin's work include Silicon and Solar Cell Technologies (54 papers), Integrated Circuits and Semiconductor Failure Analysis (46 papers) and Semiconductor materials and devices (23 papers). L. Rubin is often cited by papers focused on Silicon and Solar Cell Technologies (54 papers), Integrated Circuits and Semiconductor Failure Analysis (46 papers) and Semiconductor materials and devices (23 papers). L. Rubin collaborates with scholars based in United States, Italy and Australia. L. Rubin's co-authors include K. S. Jones, John H. Jackson, Mark E. Law, T. P. Orlando, J. B. Vander Sande, V. Krishnamoorthy, R. Beyers, G. Gorman, R. Savoy and P. Chi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

L. Rubin

66 papers receiving 450 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Rubin United States 12 379 185 93 91 73 78 488
В. И. Зубков Russia 11 218 0.6× 242 1.3× 49 0.5× 20 0.2× 122 1.7× 72 339
M. de Potter Belgium 13 441 1.2× 392 2.1× 20 0.2× 57 0.6× 100 1.4× 51 542
G. Galvagno Italy 12 318 0.8× 102 0.6× 22 0.2× 109 1.2× 56 0.8× 35 377
J. Klatt United States 12 403 1.1× 293 1.6× 24 0.3× 99 1.1× 181 2.5× 30 511
John R. Troxell United States 7 493 1.3× 345 1.9× 44 0.5× 71 0.8× 197 2.7× 16 569
J. H. Dinan United States 10 262 0.7× 190 1.0× 29 0.3× 21 0.2× 132 1.8× 21 357
M. K. Linnarsson Sweden 10 341 0.9× 115 0.6× 50 0.5× 68 0.7× 73 1.0× 17 408
J. S. Park United States 7 336 0.9× 292 1.6× 23 0.2× 47 0.5× 159 2.2× 9 451
F. Ermanis United States 13 366 1.0× 330 1.8× 48 0.5× 42 0.5× 124 1.7× 20 488
E. te Kaat Germany 10 202 0.5× 69 0.4× 55 0.6× 154 1.7× 107 1.5× 12 339

Countries citing papers authored by L. Rubin

Since Specialization
Citations

This map shows the geographic impact of L. Rubin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Rubin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Rubin more than expected).

Fields of papers citing papers by L. Rubin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Rubin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Rubin. The network helps show where L. Rubin may publish in the future.

Co-authorship network of co-authors of L. Rubin

This figure shows the co-authorship network connecting the top 25 collaborators of L. Rubin. A scholar is included among the top collaborators of L. Rubin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Rubin. L. Rubin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rubin, L., et al.. (2023). Purion XEmax, Axcelis ultra-high energy implanter with Boost™ technology. MRS Advances. 7(36). 1490–1494.
2.
Lee, Kyungwon, et al.. (2020). Damage control of ion implantation for advanced doping process by using in-situ temperature control. Materials Science in Semiconductor Processing. 117. 105164–105164. 1 indexed citations
3.
Connelly, Daniel, et al.. (2018). Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 36(6). 2 indexed citations
4.
Kim, Sang Wan, et al.. (2016). Sub-lithographic Patterning via Tilted Ion Implantation for Scaling Beyond the 7-nm Technology Node. IEEE Transactions on Electron Devices. 64(1). 231–236. 5 indexed citations
5.
Kim, Sang Wan, et al.. (2016). Tilted ion implantation as a cost-efficient sublithographic patterning technique. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 34(4). 7 indexed citations
6.
7.
Lee, Kyungwon, Steve Kim, L. Rubin, et al.. (2008). A Study of Implanted BF[sub 2] as a Function of Wafer Temperature During Implant. AIP conference proceedings. 87–90. 1 indexed citations
8.
Ameen, M. S., L. Rubin, M. Harris, & Chuong Huynh. (2008). Properties of ultralow energy boron implants using octadecaborane. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 26(1). 373–376. 2 indexed citations
9.
Jones, K. S., et al.. (2008). Boron diffusion in amorphous silicon-germanium alloys. Applied Physics Letters. 92(17). 3 indexed citations
10.
Law, Mark E., et al.. (2004). Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(1). 312–316. 1 indexed citations
11.
12.
Jones, K. S., Mark E. Law, David S. Simons, et al.. (2002). The effect of end of range loops on transient enhanced diffusion in Si. 618–621. 1 indexed citations
13.
Wang, Geng, et al.. (2002). A universal ion implantation model for all species into single-crystal silicon. IEEE Transactions on Electron Devices. 49(9). 1519–1525. 5 indexed citations
14.
Rubin, L., et al.. (2002). Gettering of Fe, Cu, and Ni by high dose boron buried layers. 2. 1014–1017. 2 indexed citations
15.
Pech, R., et al.. (2002). Extended defects in silicon by MeV B++ implantation in different 8" Cz-Si wafers. 2. 756–759. 2 indexed citations
16.
Rubin, L., et al.. (2002). Effective gettering of oxygen by high dose, high energy boron buried layers. 2. 1010–1013. 1 indexed citations
17.
Feng, Tao, et al.. (2001). Reverse Diode Leakage in Spike-Annealed Ultra-Shallowjunctions. MRS Proceedings. 669. 3 indexed citations
18.
Jones, K. S., et al.. (2000). Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon. Journal of Applied Physics. 87(6). 2910–2913. 30 indexed citations
19.
Jones, K. S., V. Krishnamoorthy, Mark E. Law, et al.. (1996). Diffusion of ion implanted boron in preamorphized silicon. Applied Physics Letters. 68(19). 2672–2674. 44 indexed citations
20.
Rubin, L., T. P. Orlando, & J. B. Vander Sande. (1994). Surface morphology and electrical properties of BiSrCaCuO thin films deposited by reactive sputtering from multiple targets. Physica C Superconductivity. 220(3-4). 284–294. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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