L. P. Erickson

700 total citations
15 papers, 557 citations indexed

About

L. P. Erickson is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, L. P. Erickson has authored 15 papers receiving a total of 557 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 3 papers in Condensed Matter Physics. Recurrent topics in L. P. Erickson's work include Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (9 papers) and Advanced Semiconductor Detectors and Materials (3 papers). L. P. Erickson is often cited by papers focused on Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (9 papers) and Advanced Semiconductor Detectors and Materials (3 papers). L. P. Erickson collaborates with scholars based in United States. L. P. Erickson's co-authors include H. Morkoç̌, R. Fischer, M. Longerbone, H. Zabel, Chang‐Ho Choi, N. Ōtsuka, D. A. Neumann, W. Kopp, Navin Chand and G. Y. Robinson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

L. P. Erickson

15 papers receiving 515 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L. P. Erickson United States	11	438	433	97	89	87	15	557
T.J. Zamerowski United States	12	366 0.8×	352 0.8×	67 0.7×	37 0.4×	80 0.9×	18	454
F. Ermanis United States	13	366 0.8×	330 0.8×	39 0.4×	48 0.5×	124 1.4×	20	488
R. R. Saxena United States	11	292 0.7×	253 0.6×	58 0.6×	28 0.3×	124 1.4×	19	387
S. B. Hyder United States	12	257 0.6×	210 0.5×	86 0.9×	16 0.2×	92 1.1×	28	363
Bob Wilson	2	455 1.0×	455 1.1×	38 0.4×	76 0.9×	109 1.3×	4	570
Vadim Tokranov United States	16	795 1.8×	524 1.2×	131 1.4×	78 0.9×	265 3.0×	118	931
G. Poiblaud France	10	364 0.8×	362 0.8×	29 0.3×	91 1.0×	117 1.3×	13	509
F. Proix France	15	274 0.6×	381 0.9×	92 0.9×	39 0.4×	149 1.7×	31	548
P. Roentgen Switzerland	12	431 1.0×	467 1.1×	65 0.7×	95 1.1×	100 1.1×	37	570
Yasoo Harada Japan	8	219 0.5×	180 0.4×	55 0.6×	50 0.6×	57 0.7×	32	324

Countries citing papers authored by L. P. Erickson

Since Specialization

Citations

This map shows the geographic impact of L. P. Erickson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. P. Erickson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. P. Erickson more than expected).

Fields of papers citing papers by L. P. Erickson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. P. Erickson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. P. Erickson. The network helps show where L. P. Erickson may publish in the future.

Co-authorship network of co-authors of L. P. Erickson

This figure shows the co-authorship network connecting the top 25 collaborators of L. P. Erickson. A scholar is included among the top collaborators of L. P. Erickson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. P. Erickson. L. P. Erickson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Erickson, L. P., et al.. (1987). The observation of oscillations in secondary electron emission during the growth of GaAs by MBE. Journal of Crystal Growth. 81(1-4). 55–58. 10 indexed citations

Fischer, R., H. Morkoç̌, D. A. Neumann, et al.. (1986). Material properties of high-quality GaAs epitaxial layers grown on Si substrates. Journal of Applied Physics. 60(5). 1640–1647. 230 indexed citations

Aksun, M.I., H. Morkoç̌, L. F. Lester, et al.. (1986). Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates. Applied Physics Letters. 49(24). 1654–1655. 38 indexed citations

Fischer, R., et al.. (1985). GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy. Applied Physics Letters. 47(4). 397–399. 97 indexed citations

Erickson, L. P., et al.. (1985). Summary Abstract: MBE film growth by direct free substrate heating. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(2). 536–537. 8 indexed citations

Morkoç̌, H., C. K. Peng, T. Henderson, et al.. (1985). High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy. IEEE Electron Device Letters. 6(7). 381–383. 33 indexed citations

Henderson, T., W. Kopp, R. Fischer, et al.. (1984). Large capacity As2 source for molecular beam epitaxy. Review of Scientific Instruments. 55(11). 1763–1766. 6 indexed citations

Erickson, L. P., et al.. (1984). High-efficiency V-band GaAs IMPATT diodes. Electronics Letters. 20(5). 212–214. 6 indexed citations

Arnold, D., John F. Klem, T. Henderson, H. Morkoç̌, & L. P. Erickson. (1984). Backgating in GaAs/(Al,Ga)As modulation-doped field-effect transistors and its reduction with a superlattice. Applied Physics Letters. 45(7). 764–766. 15 indexed citations

10.

Narayanan, Ajit, Dennis G. Fisher, L. P. Erickson, & George D. O’Clock. (1984). Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxy. Journal of Applied Physics. 56(6). 1886–1887. 18 indexed citations

11.

Erickson, L. P., et al.. (1984). Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2. Journal of Applied Physics. 56(8). 2231–2235. 5 indexed citations

12.

Erickson, L. P., et al.. (1983). Growth of Al _0.3 Ga _0.7 As by molecular beam epitaxy in the forbidden temperature range using As ₂. Electronics Letters. 19(16). 632–633. 31 indexed citations

13.

Drummond, T. J., W. Kopp, D. Arnold, et al.. (1983). Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET). Electronics Letters. 19(23). 986–988. 13 indexed citations

14.

Erickson, L. P., et al.. (1983). Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(2). 158–161. 13 indexed citations

15.

Erickson, L. P., Aadil Waseem, & G. Y. Robinson. (1979). Characterization of ohmic contacts to InP. Thin Solid Films. 64(3). 421–426. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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