M. Longerbone

413 total citations
9 papers, 346 citations indexed

About

M. Longerbone is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, M. Longerbone has authored 9 papers receiving a total of 346 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Atomic and Molecular Physics, and Optics, 9 papers in Electrical and Electronic Engineering and 1 paper in Condensed Matter Physics. Recurrent topics in M. Longerbone's work include Semiconductor Quantum Structures and Devices (8 papers), Semiconductor materials and devices (5 papers) and Semiconductor Lasers and Optical Devices (3 papers). M. Longerbone is often cited by papers focused on Semiconductor Quantum Structures and Devices (8 papers), Semiconductor materials and devices (5 papers) and Semiconductor Lasers and Optical Devices (3 papers). M. Longerbone collaborates with scholars based in United States. M. Longerbone's co-authors include H. Morkoç̌, L. P. Erickson, R. Fischer, N. Ōtsuka, H. Zabel, Chang‐Ho Choi, D. A. Neumann, K.H.G. Duh, M.I. Aksun and P.C. Chao and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

M. Longerbone

9 papers receiving 320 citations

Peers

M. Longerbone

AMPO

EEE

CMP

BE

MC

L. Buydens Belgium

D. Pettit United States

C. A. Warwick United States

D.C. Radulescu United States

Y. Kohama Japan

P. Kightley United Kingdom

U. Marti Switzerland

R.C. Goodfellow United Kingdom

L. Osterling United States

M. Saarinen Finland

L. Buydens Belgium

M. Longerbone

196 ×0.7

AMPO

279 ×1.0

EEE

41 ×0.6

CMP

47 ×0.8

BE

36 ×0.7

MC

Citations per year, relative to M. Longerbone M. Longerbone (= 1×) peers L. Buydens

Countries citing papers authored by M. Longerbone

Since Specialization

Citations

This map shows the geographic impact of M. Longerbone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Longerbone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Longerbone more than expected).

Fields of papers citing papers by M. Longerbone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Longerbone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Longerbone. The network helps show where M. Longerbone may publish in the future.

Co-authorship network of co-authors of M. Longerbone

This figure shows the co-authorship network connecting the top 25 collaborators of M. Longerbone. A scholar is included among the top collaborators of M. Longerbone based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Longerbone. M. Longerbone is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

9 of 9 papers shown

1.

Erickson, L. P., et al.. (1987). The observation of oscillations in secondary electron emission during the growth of GaAs by MBE. Journal of Crystal Growth. 81(1-4). 55–58. 10 indexed citations

2.

Reddy, U. K., R. Houdré, G.O. Munns, et al.. (1987). Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular-beam epitaxy. Journal of Applied Physics. 62(12). 4858–4862. 8 indexed citations

3.

Gourley, P. L., et al.. (1987). Photoluminescence microscopy of epitaxial GaAs on Si. Applied Physics Letters. 51(8). 599–601. 6 indexed citations

4.

Fischer, R., H. Morkoç̌, D. A. Neumann, et al.. (1986). Material properties of high-quality GaAs epitaxial layers grown on Si substrates. Journal of Applied Physics. 60(5). 1640–1647. 230 indexed citations

5.

Arch, D.K., et al.. (1986). High-performance self-aligned gate (Al,Ga)As/GaAs MODFET's on MBE Layers grown on. IEEE Electron Device Letters. 7(11). 635–637. 10 indexed citations

6.

Aksun, M.I., H. Morkoç̌, L. F. Lester, et al.. (1986). Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates. Applied Physics Letters. 49(24). 1654–1655. 38 indexed citations

7.

Morkoç̌, H., C. K. Peng, T. Henderson, et al.. (1985). High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy. IEEE Electron Device Letters. 6(7). 381–383. 33 indexed citations

8.

Abrokwah, J., et al.. (1985). Molecular beam epitaxy growth of high performance GaAs power field effect transistors. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 3(5). 1323–1326. 2 indexed citations

9.

Abrokwah, J., et al.. (1984). Modulation-doped FET threshold voltage uniformity of a high throughput 3 inch MBE system. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(2). 252–255. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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