Ming-Hung Han

523 total citations
18 papers, 421 citations indexed

About

Ming-Hung Han is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Ming-Hung Han has authored 18 papers receiving a total of 421 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 4 papers in Biomedical Engineering and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in Ming-Hung Han's work include Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and devices (17 papers) and Low-power high-performance VLSI design (4 papers). Ming-Hung Han is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and devices (17 papers) and Low-power high-performance VLSI design (4 papers). Ming-Hung Han collaborates with scholars based in Taiwan. Ming-Hung Han's co-authors include Hung-Bin Chen, Yung‐Chun Wu, Yiming Li, Chun‐Yen Chang, Chih‐Hong Hwang, Hui-Wen Cheng, Chun-Yen Chang, Fuhai Li, Yi‐Ruei Jhan and Chih‐Han Chang and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Ming-Hung Han

18 papers receiving 403 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ming-Hung Han Taiwan 9 415 87 14 13 10 18 421
Xuemei Xi United States 10 382 0.9× 49 0.6× 11 0.8× 14 1.1× 28 2.8× 35 400
M.M. Pelella United States 11 380 0.9× 33 0.4× 18 1.3× 15 1.2× 23 2.3× 45 395
J. Lacord France 10 376 0.9× 85 1.0× 23 1.6× 21 1.6× 11 1.1× 34 385
Dawit Burusie Abdi Belgium 10 650 1.6× 211 2.4× 14 1.0× 13 1.0× 16 1.6× 28 662
Nattapol Damrongplasit United States 10 448 1.1× 82 0.9× 13 0.9× 16 1.2× 5 0.5× 23 468
Kavicharan Mummaneni India 11 353 0.9× 116 1.3× 35 2.5× 12 0.9× 5 0.5× 46 373
Akram Salman United States 11 446 1.1× 49 0.6× 5 0.4× 15 1.2× 12 1.2× 53 453
F. Allain France 13 549 1.3× 78 0.9× 25 1.8× 29 2.2× 14 1.4× 36 559
A. Bryant United States 11 329 0.8× 54 0.6× 12 0.9× 9 0.7× 13 1.3× 21 332
T.J. Krutsick United States 5 455 1.1× 60 0.7× 21 1.5× 39 3.0× 6 0.6× 8 462

Countries citing papers authored by Ming-Hung Han

Since Specialization
Citations

This map shows the geographic impact of Ming-Hung Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ming-Hung Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ming-Hung Han more than expected).

Fields of papers citing papers by Ming-Hung Han

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ming-Hung Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ming-Hung Han. The network helps show where Ming-Hung Han may publish in the future.

Co-authorship network of co-authors of Ming-Hung Han

This figure shows the co-authorship network connecting the top 25 collaborators of Ming-Hung Han. A scholar is included among the top collaborators of Ming-Hung Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ming-Hung Han. Ming-Hung Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Chen, Hung-Bin, et al.. (2018). Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method. IEEE Journal of the Electron Devices Society. 7. 168–173. 2 indexed citations
2.
3.
Chen, Hung-Bin, et al.. (2014). Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor. Nanoscale Research Letters. 9(1). 392–392. 5 indexed citations
4.
Chen, Hung-Bin, et al.. (2013). Performance of GAA poly-Si nanosheet (2nm) channel of junctionless transistors with ideal subthreshold slope. Symposium on VLSI Technology. 31 indexed citations
5.
Chen, Hung-Bin, et al.. (2013). Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel. IEEE Electron Device Letters. 34(7). 897–899. 29 indexed citations
6.
Han, Ming-Hung, et al.. (2013). Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis. IEEE Electron Device Letters. 34(2). 157–159. 35 indexed citations
7.
Han, Ming-Hung, et al.. (2013). Performance Comparison Between Bulk and SOI Junctionless Transistors. IEEE Electron Device Letters. 34(2). 169–171. 65 indexed citations
8.
Han, Ming-Hung, et al.. (2013). Device and Circuit Performance Estimation of Junctionless Bulk FinFETs. IEEE Transactions on Electron Devices. 60(6). 1807–1813. 68 indexed citations
9.
Han, Ming-Hung, et al.. (2013). Improving Breakdown Voltage of LDMOS Using a Novel Cost Effective Design. IEEE Transactions on Semiconductor Manufacturing. 26(2). 248–252. 8 indexed citations
10.
Han, Ming-Hung, et al.. (2012). A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage. Japanese Journal of Applied Physics. 51(4S). 04DP04–04DP04. 2 indexed citations
11.
Li, Yiming, Hui-Wen Cheng, & Ming-Hung Han. (2010). Statistical Simulation of Static Noise Margin Variability in Static Random Access Memory. IEEE Transactions on Semiconductor Manufacturing. 23(4). 509–516. 18 indexed citations
12.
Cheng, Hui-Wen, et al.. (2010). 3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices. 15.6.1–15.6.4. 34 indexed citations
13.
Li, Yiming, et al.. (2010). Effect of intrinsic-parameter fluctuations on 16-nm-gate CMOS and current mirror circuit. 56. 798–801. 2 indexed citations
14.
Li, Yiming, et al.. (2010). Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies. IEEE Transactions on Electron Devices. 57(2). 437–447. 97 indexed citations
15.
16.
Li, Yiming, et al.. (2009). Simulation of electrical characteristic fluctuation in 16-nm FinFETs' and circuits. 55. 139–140. 2 indexed citations
17.
Lee, Yao‐Jen, Fu-Kuo Hsueh, Ming-Hung Han, et al.. (2009). 3D 65nm CMOS with 320°C microwave dopant activation. 1–4. 5 indexed citations
18.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Xuemei Xi Breakdown of academic impact, for papers by M.M. Pelella Breakdown of academic impact, for papers by J. Lacord Breakdown of academic impact, for papers by Dawit Burusie Abdi Breakdown of academic impact, for papers by Nattapol Damrongplasit Breakdown of academic impact, for papers by Kavicharan Mummaneni Breakdown of academic impact, for papers by Akram Salman Breakdown of academic impact, for papers by F. Allain Breakdown of academic impact, for papers by A. Bryant Breakdown of academic impact, for papers by T.J. Krutsick
Rankless by CCL
2026