Kuen-Yi Chen

454 total citations
18 papers, 346 citations indexed

About

Kuen-Yi Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Kuen-Yi Chen has authored 18 papers receiving a total of 346 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Kuen-Yi Chen's work include Semiconductor materials and devices (17 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Advanced Memory and Neural Computing (7 papers). Kuen-Yi Chen is often cited by papers focused on Semiconductor materials and devices (17 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Advanced Memory and Neural Computing (7 papers). Kuen-Yi Chen collaborates with scholars based in Taiwan. Kuen-Yi Chen's co-authors include Yung‐Hsien Wu, Hao‐Kai Peng, Pin‐Hsuan Chen, Yi‐Shan Tsai, Chia-Chun Lin and Jia‐Hong Huang and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and RSC Advances.

In The Last Decade

Kuen-Yi Chen

18 papers receiving 344 citations

Peers

Kuen-Yi Chen
Jesús Calvo Germany
Dirk Utess Germany
Roman Boschke Belgium
Maximilian Drescher Germany
Karine Florent Belgium
Bernhard Stampfer Austria
Sangjin Hyun South Korea
Yen-Kai Lin United States
Kun Hee Ye South Korea
Nujhat Tasneem United States
Jesús Calvo Germany
Kuen-Yi Chen
Citations per year, relative to Kuen-Yi Chen Kuen-Yi Chen (= 1×) peers Jesús Calvo

Countries citing papers authored by Kuen-Yi Chen

Since Specialization
Citations

This map shows the geographic impact of Kuen-Yi Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kuen-Yi Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kuen-Yi Chen more than expected).

Fields of papers citing papers by Kuen-Yi Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kuen-Yi Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kuen-Yi Chen. The network helps show where Kuen-Yi Chen may publish in the future.

Co-authorship network of co-authors of Kuen-Yi Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Kuen-Yi Chen. A scholar is included among the top collaborators of Kuen-Yi Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kuen-Yi Chen. Kuen-Yi Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Peng, Hao‐Kai, et al.. (2021). Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer. Applied Physics Letters. 118(10). 49 indexed citations
2.
Peng, Hao‐Kai, et al.. (2021). HfZrO x -Based Switchable Diode for Logic-in-Memory Applications. IEEE Transactions on Electron Devices. 68(2). 545–549. 11 indexed citations
3.
4.
Chen, Kuen-Yi, et al.. (2019). Enhanced Reliability of Ferroelectric HfZrO x on Semiconductor by Using Epitaxial SiGe as Substrate. IEEE Transactions on Electron Devices. 66(8). 3636–3639. 11 indexed citations
5.
Chen, Kuen-Yi, et al.. (2019). Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrOx. IEEE Transactions on Nanotechnology. 18. 532–535. 7 indexed citations
6.
Chen, Kuen-Yi, Yi‐Shan Tsai, & Yung‐Hsien Wu. (2019). Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors. IEEE Electron Device Letters. 40(9). 1370–1373. 27 indexed citations
7.
8.
Chen, Kuen-Yi, et al.. (2017). Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer. Scientific Reports. 7(1). 43659–43659. 16 indexed citations
9.
Chen, Kuen-Yi, Pin‐Hsuan Chen, & Yung‐Hsien Wu. (2017). Excellent reliability of ferroelectric HfZrO<inf>x</inf> free from wake-up and fatigue effects by NH<inf>3</inf> plasma treatment. T84–T85. 18 indexed citations
10.
Chen, Kuen-Yi, et al.. (2017). Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile. IEEE Electron Device Letters. 38(3). 299–302. 8 indexed citations
11.
Chen, Kuen-Yi, et al.. (2017). Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact. Microelectronic Engineering. 178. 137–140. 4 indexed citations
12.
Chen, Kuen-Yi, Pin‐Hsuan Chen, & Yung‐Hsien Wu. (2017). Excellent reliability of ferroelectric HfZrO<inf>x</inf> free from wake-up and fatigue effects by NH<inf>3</inf> plasma treatment. T84–T85. 5 indexed citations
13.
Chen, Kuen-Yi, et al.. (2017). Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors. IEEE Electron Device Letters. 39(1). 87–90. 71 indexed citations
14.
Chen, Kuen-Yi, et al.. (2016). Toward Low-Power Flash Memory: Prospect of Adopting Crystalline Oxide as Charge Trapping Layer. IEEE Journal of the Electron Devices Society. 4(5). 335–346. 7 indexed citations
15.
Chen, Kuen-Yi, et al.. (2016). Fermi Level Depinning on n-Epitaxial GeSn by Yb Stanogermanide Formation With Low-Contact Resistivity. IEEE Electron Device Letters. 37(9). 1207–1210. 8 indexed citations
16.
Chen, Kuen-Yi, et al.. (2016). Ferroelectricity of low thermal-budget HfAlOx for devices with metal–ferroelectric–insulator–semiconductor structure. RSC Advances. 6(78). 74445–74452. 26 indexed citations
17.
Chen, Kuen-Yi, et al.. (2016). Formation of Ohmic Contact With Low Contact Resistance on n-GeSn by Fermi Level Depinning Using Plasma Treatment. IEEE Electron Device Letters. 37(7). 827–830. 12 indexed citations
18.
Chen, Kuen-Yi, et al.. (2015). TiO2-based MIM capacitors featuring suppressed leakage current by embedding Ge nanocrystals. RSC Advances. 5(18). 13550–13554. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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