P.-G. Chen

452 total citations
13 papers, 392 citations indexed

About

P.-G. Chen is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, P.-G. Chen has authored 13 papers receiving a total of 392 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 3 papers in Condensed Matter Physics. Recurrent topics in P.-G. Chen's work include Semiconductor materials and devices (10 papers), Ferroelectric and Negative Capacitance Devices (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). P.-G. Chen is often cited by papers focused on Semiconductor materials and devices (10 papers), Ferroelectric and Negative Capacitance Devices (6 papers) and Advancements in Semiconductor Devices and Circuit Design (5 papers). P.-G. Chen collaborates with scholars based in Taiwan. P.-G. Chen's co-authors include M. H. Lee, Ming-Han Liao, K.-S. Li, Ming Tang, Chin‐Gi Huang, Wei‐June Chen, Chun‐Ya Lin, Cheng Tang, Shang‐Tzen Chang and C. W. Liu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

P.-G. Chen

13 papers receiving 382 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P.-G. Chen Taiwan 6 295 188 84 50 41 13 392
J. Figueroa Sweden 6 207 0.7× 146 0.8× 28 0.3× 50 1.0× 9 0.2× 13 315
Pawan Saini India 10 33 0.1× 70 0.4× 113 1.3× 7 0.1× 18 0.4× 50 295
Hangil Kim Japan 12 195 0.7× 121 0.6× 166 2.0× 5 0.1× 50 1.2× 32 448
Chun‐Liang Lin Taiwan 11 124 0.4× 155 0.8× 16 0.2× 33 0.7× 56 1.4× 27 368
Marat Lutfullin Russia 10 221 0.7× 181 1.0× 88 1.0× 24 0.5× 7 0.2× 26 365
Ji-Min Kim South Korea 10 82 0.3× 56 0.3× 100 1.2× 40 0.8× 12 0.3× 40 304
Giulia Spaggiari Italy 9 251 0.9× 246 1.3× 9 0.1× 15 0.3× 6 0.1× 25 397
Tanja Petreska Ivanovska North Macedonia 8 306 1.0× 287 1.5× 8 0.1× 98 2.0× 6 0.1× 25 460

Countries citing papers authored by P.-G. Chen

Since Specialization
Citations

This map shows the geographic impact of P.-G. Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.-G. Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.-G. Chen more than expected).

Fields of papers citing papers by P.-G. Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.-G. Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.-G. Chen. The network helps show where P.-G. Chen may publish in the future.

Co-authorship network of co-authors of P.-G. Chen

This figure shows the co-authorship network connecting the top 25 collaborators of P.-G. Chen. A scholar is included among the top collaborators of P.-G. Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.-G. Chen. P.-G. Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

13 of 13 papers shown
1.
2.
Lee, M. H., P.-G. Chen, Y. C. Chou, et al.. (2017). Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide. 1–2. 6 indexed citations
3.
Lee, M. H., P.-G. Chen, Y. C. Chou, et al.. (2017). Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETs. 23.3.1–23.3.4. 34 indexed citations
4.
Chen, P.-G., Ming Tang, Ming-Han Liao, & M. H. Lee. (2016). In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact. Solid-State Electronics. 129. 206–209. 4 indexed citations
5.
Lee, M. H., Cheng Tang, P.-G. Chen, et al.. (2016). Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs. 12.1.1–12.1.4. 129 indexed citations
6.
Liao, Ming-Han & P.-G. Chen. (2015). The Demonstration of Dislocation-Stress Memorization Technique Stressor on Si n-FinFETs. IEEE Transactions on Nanotechnology. 14(4). 657–659. 2 indexed citations
7.
8.
Liao, Ming-Han & P.-G. Chen. (2015). The demonstration of the Si nano-tube device with the promising short channel control. Journal of Applied Physics. 118(13). 2 indexed citations
9.
Chen, P.-G., Ming Tang, & M. H. Lee. (2015). Indium-Based Ternary Barrier High-Electron- Mobility Transistors on Si Substrate With High ON/OFF Ratio for Power Applications. IEEE Electron Device Letters. 36(3). 259–261. 3 indexed citations
10.
11.
Liao, Ming-Han & P.-G. Chen. (2015). The demonstration of a D-SMT stressor on Ge planer n-MOSFETs. AIP Advances. 5(4). 2 indexed citations
12.
Chen, P.-G., et al.. (2014). Experimental Demonstration of Ferroelectric Gate-Stack AlGaN/GaN-on-Si MOS-HEMTs With Voltage Amplification for Power Applications. IEEE Transactions on Electron Devices. 61(8). 3014–3017. 16 indexed citations
13.
Cheng, Sen‐Sung, Chun‐Ya Lin, P.-G. Chen, et al.. (2008). Insecticidal activities of leaf and twig essential oils from Clausena excavata against Aedes aegypti and Aedes albopictus larvae. Pest Management Science. 65(3). 339–343. 86 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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