Thomas Gessmann

1.8k total citations
14 papers, 482 citations indexed

About

Thomas Gessmann is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Thomas Gessmann has authored 14 papers receiving a total of 482 indexed citations (citations by other indexed papers that have themselves been cited), including 9 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Thomas Gessmann's work include GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (4 papers) and Semiconductor Lasers and Optical Devices (3 papers). Thomas Gessmann is often cited by papers focused on GaN-based semiconductor devices and materials (9 papers), Semiconductor Quantum Structures and Devices (4 papers) and Semiconductor Lasers and Optical Devices (3 papers). Thomas Gessmann collaborates with scholars based in United States, Germany and South Korea. Thomas Gessmann's co-authors include E. Fred Schubert, Jong Kyu Kim, Hong Luo, Jay Shah, Y. Xi, Jingqun Xi, Kelvin G. Lynn, Kurt R. Hebert, Cheolsoo Sone and Jaehee Cho and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Japanese Journal of Applied Physics.

In The Last Decade

Thomas Gessmann

13 papers receiving 464 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Thomas Gessmann United States	10	273	247	203	150	96	14	482
Tomotsugu Mitani Japan	6	349 1.3×	125 0.5×	213 1.0×	129 0.9×	130 1.4×	11	407
Kyeong-Jae Byeon South Korea	12	167 0.6×	183 0.7×	143 0.7×	100 0.7×	78 0.8×	19	383
Hanling Long China	16	392 1.4×	179 0.7×	280 1.4×	101 0.7×	258 2.7×	38	556
E. Andideh United States	14	152 0.6×	461 1.9×	136 0.7×	149 1.0×	188 2.0×	25	599
Peide Han China	11	118 0.4×	210 0.9×	168 0.8×	65 0.4×	81 0.8×	31	392
Joshua S. Harris United States	12	258 0.9×	316 1.3×	362 1.8×	121 0.8×	270 2.8×	14	734
Kanglin Xiong United States	15	298 1.1×	359 1.5×	254 1.3×	191 1.3×	170 1.8×	42	652
Brandon Ward United States	12	255 0.9×	294 1.2×	355 1.7×	85 0.6×	99 1.0×	28	599
A. Ramam Singapore	13	170 0.6×	367 1.5×	177 0.9×	208 1.4×	86 0.9×	48	499

Countries citing papers authored by Thomas Gessmann

Since Specialization

Citations

This map shows the geographic impact of Thomas Gessmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Gessmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Gessmann more than expected).

Fields of papers citing papers by Thomas Gessmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Gessmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Gessmann. The network helps show where Thomas Gessmann may publish in the future.

Co-authorship network of co-authors of Thomas Gessmann

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Gessmann. A scholar is included among the top collaborators of Thomas Gessmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Gessmann. Thomas Gessmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Kim, Jong Kyu, Hong Luo, Y. Xi, et al.. (2006). Light Extraction in GaInN Light-Emitting Diodes using Diffuse Omnidirectional Reflectors. Journal of The Electrochemical Society. 153(2). G105–G105. 21 indexed citations

Chhajed, Sameer, Y. Xi, Thomas Gessmann, et al.. (2005). Junction temperature in light-emitting diodes assessed by different methods. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5739. 16–16. 80 indexed citations

Kim, Jong Kyu, Thomas Gessmann, E. Fred Schubert, et al.. (2005). GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer. Applied Physics Letters. 88(1). 117 indexed citations

Shah, Jay, Thomas Gessmann, Hong Luo, et al.. (2005). Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth. MRS Proceedings. 892. 1 indexed citations

Xi, Y., Thomas Gessmann, Jingqun Xi, et al.. (2005). Junction Temperature in Ultraviolet Light-Emitting Diodes. Japanese Journal of Applied Physics. 44(10R). 7260–7260. 72 indexed citations

Kim, Jong Kyu, Thomas Gessmann, Hong Luo, & E. Fred Schubert. (2004). GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector. Applied Physics Letters. 84(22). 4508–4510. 83 indexed citations

Hebert, Kurt R., et al.. (2004). Effect of Impurities on Interfacial Void Formation in Aluminum. Journal of The Electrochemical Society. 151(4). B227–B227. 11 indexed citations

Gessmann, Thomas, Hui Luo, Jingqun Xi, K. Streubel, & E. Fred Schubert. (2004). Light-emitting diodes with integrated omnidirectionally reflective contacts. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5366. 53–53. 12 indexed citations

Li, Yun-Li, et al.. (2004). Performance characteristics of white light sources consisting of multiple light-emitting diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5187. 178–178. 9 indexed citations

10.

Gessmann, Thomas, Yun-Li Li, E. Fred Schubert, J.W. Graff, & Jinn‐Kong Sheu. (2003). GaInN light-emitting diodes with omnidirectional reflectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4996. 139–139. 9 indexed citations

11.

Gessmann, Thomas, E. F. Schubert, J.W. Graff, & K. Streubel. (2003). AlGaInP light-emitting diodes with omnidirectionally reflecting submount. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4996. 26–26. 10 indexed citations

12.

Shah, Jay, Yun-Li Li, Thomas Gessmann, & E. Fred Schubert. (2003). Experimental Analysis and a New Theoretical Model for Anomalously High Ideality Factors (n ≫ 2.0) in GaN-based p-n Junction Diodes. MRS Proceedings. 798. 5 indexed citations

13.

Wu, Huiquan, Kurt R. Hebert, Thomas Gessmann, & Kelvin G. Lynn. (2002). Corrosion-Related Interfacial Defects Formed by Dissolution of Aluminum in Aqueous Phosphoric Acid. Journal of The Electrochemical Society. 149(4). B108–B108. 19 indexed citations

14.

Hebert, Kurt R., Huiquan Wu, Thomas Gessmann, & Kelvin G. Lynn. (2001). Positron Annihilation Spectroscopy Study of Interfacial Defects Formed by Dissolution of Aluminum in Aqueous Sodium Hydroxide. Journal of The Electrochemical Society. 148(2). B92–B92. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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