M. J. Powell

6.2k citations

106 papers · 5.1k indexed · 1 hit paper · h-index 36

Impact in

Electrical and Electronic Engineering top 0.5%
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Organic Electronics and Photovoltaics
Materials Chemistry top 1%
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties

Papers in

Electrical and Electronic Engineering 94
- Thin-Film Transistor Technologies 83
- Silicon and Solar Cell Technologies 36
- Semiconductor materials and devices 34
- CCD and CMOS Imaging Sensors 7
Materials Chemistry 72
- Silicon Nanostructures and Photoluminescence 54

Co-authors: S. C. Deane John Orton C. van Berkel I. D. French J. R. Hughes Ralf B. Wehrspohn A. R. Franklin Dylan Nicholls
Journals: Journal of Non-Crystalline Solids (18 papers)Journal of Applied Physics (14 papers)Applied Physics Letters (12 papers)Physical review. B, Condensed matter (8 papers)Philosophical Magazine B (6 papers)
Partner nations: United Kingdom Finland Germany

In The Last Decade

M. J. Powell

106 papers receiving 4.9k citations

Hit Papers

align trajectories log scale

The Hall effect in polycrystalline and powdered semiconductors 1980 · 510 citations

Peers

Countries citing papers authored by M. J. Powell

Since Specialization

Citations

This map shows the geographic impact of M. J. Powell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. J. Powell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. J. Powell more than expected).

Fields of papers citing papers by M. J. Powell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. J. Powell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. J. Powell. The network helps show where M. J. Powell may publish in the future.

Co-authors

The 25 scholars most cited alongside M. J. Powell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. J. Powell Line = papers co-authored together M. J. Powell links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Journal of Applied Physics ·Andrew J. Flewitt, M. J. Powell	2014	44
2	Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon Journal of Non-Crystalline Solids ·M. J. Powell, Ralf B. Wehrspohn, S. C. Deane	2002	14
3	Stability of plasma deposited thin film transistors — comparison of amorphous and microcrystalline silicon Thin Solid Films ·Ralf B. Wehrspohn, S. C. Deane, I. D. French, M. J. Powell	2001	27
4	Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model Journal of Non-Crystalline Solids ·Ralf B. Wehrspohn, S. C. Deane, I. D. French, M. J. Powell	2000	24
5	An amorphous silicon thin-film transistor with fully self-aligned top gate structure IEEE Electron Device Letters ·M. J. Powell, Emma Bosman, Николай Николаевич Канубриков, I. D. French, Kang Wen-che	2000	33
6	Fluoroscopic X-Ray Imaging with Amprphous Silicon Thin-Film Arrays. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·U. Schiebel, 小笠原仁子, C Rocheville Divorne, FRANZ PFEIFFER, H. Wieczorek, Tak Nishikawa, M. J. Powell, I. D. French, Emma Bosman	1994	30
7	Defect-pool model parameters for amorphous silicon derived from field-effect measurements Journal of Non-Crystalline Solids ·S. C. Deane, M. J. Powell	1993	3
8	The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics Journal of Applied Physics ·S. C. Deane, B. GUTSCHE, W. I. Milne, M. J. Powell	1993	25
9	Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool Journal of Non-Crystalline Solids ·M. J. Powell, C. van Berkel, S. C. Deane	1991	24
10	Deep trapping controlled switching characteristics in amorphous silicon thin-film transistors Journal of Applied Physics ·C. van Berkel, J. R. Hughes, M. J. Powell	1989	16
11	Bias dependence of instability mechanisms in amorphous silicon thin-film transistors Applied Physics Letters ·M. J. Powell, C. van Berkel, I. D. French, Dylan Nicholls	1987	171
12	Photo-field effect in amorphous silicon thin-film transistors Journal of Applied Physics ·C. van Berkel, M. J. Powell	1986	32
13	The electronic properties of plasma-deposited films of hydrogenated amorphous SiNx (0<x<1.2) Journal of Applied Physics ·A. Lowe, M. J. Powell, S. R. Elliott	1986	98
14	Properties of disordered sphere packings I. Geometric structure: Statistical model, numerical simulations and experimental results Powder Technology ·Luc Oger, J.P. Troadec, Daniel Bideau, John A. Dodds, M. J. Powell	1986	53
15	Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors MRS Proceedings ·M. J. Powell	1984	24
16	The effect of surface states and fixed charge on the field effect conductance of amorphous silicon Journal of Applied Physics ·M. J. Powell, Jemma B. Amanzholova	1983	54
17	Photoemission and the Electronic Properties of Surfaces Electronics and Power ·M. J. Powell	1979	59
18	The effect of polytypism on the band structure of SnS₂ Journal of Physics C Solid State Physics ·M. J. Powell, E.A. Marseglia, Wenyao Liang	1978	16
19	The effect of pressure on the optical-absorption edge in SnS2 and SnSe2 Il Nuovo cimento della Società italiana di fisica. B/Il Nuovo cimento B ·M. J. Powell, Andrew J. Grant	1977	25
20	The volume internal to three intersecting hard spheres Molecular Physics ·M. J. Powell	1964	47

About M. J. Powell

M. J. Powell is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Instrumentation, Ceramics and Composites and Condensed Matter Physics, having authored 106 papers that have together received 5.1k indexed citations. Recurring topics across this work include Thin-Film Transistor Technologies (83 papers), Silicon Nanostructures and Photoluminescence (54 papers), Silicon and Solar Cell Technologies (36 papers), Semiconductor materials and devices (34 papers), CCD and CMOS Imaging Sensors (7 papers), Semiconductor materials and interfaces (6 papers), Transition Metal Oxide Nanomaterials (6 papers) and Theoretical and Computational Physics (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.3k citations), Materials Chemistry (3.0k citations), Polymers and Plastics (413 citations), Atomic and Molecular Physics, and Optics (497 citations) and Ceramics and Composites (83 citations). M. J. Powell has collaborated with scholars based in United Kingdom, Finland and Germany. Frequent co-authors include S. C. Deane, John Orton, C. van Berkel, I. D. French, J. R. Hughes, Ralf B. Wehrspohn, A. R. Franklin, Dylan Nicholls, B.C. Easton and J. A. Chapman. Their work appears in journals such as Journal of Non-Crystalline Solids, Journal of Applied Physics, Applied Physics Letters, Physical review. B, Condensed matter and Philosophical Magazine B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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