Jiafei Yao

759 total citations
81 papers, 540 citations indexed

About

Jiafei Yao is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Jiafei Yao has authored 81 papers receiving a total of 540 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 10 papers in Materials Chemistry. Recurrent topics in Jiafei Yao's work include Silicon Carbide Semiconductor Technologies (57 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Semiconductor materials and devices (32 papers). Jiafei Yao is often cited by papers focused on Silicon Carbide Semiconductor Technologies (57 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Semiconductor materials and devices (32 papers). Jiafei Yao collaborates with scholars based in China, United States and Taiwan. Jiafei Yao's co-authors include Yufeng Guo, Jun Zhang, Maolin Zhang, S.I. Long, Hong Lin, Kemeng Yang, Jing Chen, Bo Zhang, Changchun Zhang and Weihua Tang and has published in prestigious journals such as Applied Physics Letters, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Jiafei Yao

68 papers receiving 513 citations

Peers

Jiafei Yao
Catherine Langpoklakpam Taiwan
Peter F. Satterthwaite United States
An-Chen Liu Taiwan
Vishal Khandelwal Saudi Arabia
Matthew Porter United States
Zhiyuan Liu Saudi Arabia
Wyatt K. Metzger United States
Jie Wei China
Catherine Langpoklakpam Taiwan
Jiafei Yao
Citations per year, relative to Jiafei Yao Jiafei Yao (= 1×) peers Catherine Langpoklakpam

Countries citing papers authored by Jiafei Yao

Since Specialization
Citations

This map shows the geographic impact of Jiafei Yao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jiafei Yao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jiafei Yao more than expected).

Fields of papers citing papers by Jiafei Yao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jiafei Yao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jiafei Yao. The network helps show where Jiafei Yao may publish in the future.

Co-authorship network of co-authors of Jiafei Yao

This figure shows the co-authorship network connecting the top 25 collaborators of Jiafei Yao. A scholar is included among the top collaborators of Jiafei Yao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jiafei Yao. Jiafei Yao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Xinyu, Kemeng Yang, Jiafei Yao, et al.. (2025). Self-adaptive body bias tuning technique for enhancing Baliga's figure-of-merit (BFOM) in thin bulk silicon LDMOS. Microelectronics Journal. 156. 106559–106559.
2.
Yao, Jiafei, Jincheng Liu, Xinpeng Zhang, et al.. (2024). Gradient voltage amplification effect in FDSOI NCFET with thickness-variable ferroelectric layer. Physica Scripta. 99(6). 65207–65207. 1 indexed citations
3.
Chen, Jing, Jiajun Guo, Qing Yao, et al.. (2024). Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm. Microelectronics Journal. 153. 106410–106410. 1 indexed citations
4.
Zhang, Jun, Jia Zhou, Jiafei Yao, et al.. (2024). Thermal-induced bandgap broadening phenomenon in copolymer organic semiconductors. Applied Physics Letters. 124(25). 1 indexed citations
5.
Chen, Jing, Kemeng Yang, Jiafei Yao, et al.. (2024). Efficient Automatic Design of IGBT Structural Parameters Using Differential Evolution and Machine Learning Model. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 44(3). 1059–1069.
6.
Hu, Ziwei, Jiafei Yao, Fan Yang, et al.. (2024). A novel double-trench SiC SBD-embedded MOSFET with improved figure-of-merit and short-circuit ruggedness. Microelectronics Journal. 155. 106495–106495.
7.
Huang, Chen-Yang, Jun Zhang, Jiafei Yao, et al.. (2024). A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer. Applied Physics Letters. 125(6). 1 indexed citations
8.
Huang, Chen-Yang, Xiaoming Huang, Jiafei Yao, et al.. (2023). High Baliga’s Figure of Merit Amorphous InGaZnO Power Transistor With Ultra-Thin Indium Zinc Oxide Buried Layer. IEEE Electron Device Letters. 44(5). 769–772. 8 indexed citations
9.
Chen, Jing, Jiafei Yao, Jun Zhang, et al.. (2023). A Novel Prediction Technology of Output Characteristics for IGBT Based on Compact Model and Artificial Neural Networks. IEEE Transactions on Electron Devices. 70(9). 4885–4891. 5 indexed citations
10.
Zhang, Jun, Lei Wang, Jiayi Zhou, et al.. (2023). A 121 A/cm2 High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage. IEEE Journal of the Electron Devices Society. 11. 579–585.
11.
Liu, Jianhua, Jun Zhang, Jiafei Yao, et al.. (2022). The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT. IEEE Journal of the Electron Devices Society. 10. 983–988. 1 indexed citations
12.
Yao, Jiafei, Zhenyu Zhang, Yufeng Guo, et al.. (2021). Novel LDMOS With Integrated Triple Direction High-k Gate and Field Dielectrics. IEEE Transactions on Electron Devices. 68(8). 3997–4003. 10 indexed citations
13.
Liu, Jianhua, Yufeng Guo, Jun Zhang, et al.. (2020). Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates. IEEE Journal of the Electron Devices Society. 8. 1031–1038. 5 indexed citations
14.
Guo, Yufeng, et al.. (2020). The New Structure and Analytical Model of a High-Voltage Interconnection Shielding Structure With High-k Dielectric Pillar. IEEE Transactions on Electron Devices. 67(4). 1745–1750. 5 indexed citations
15.
Tian, Tao, Yufeng Guo, Jiafei Yao, et al.. (2019). Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path. IEEE Journal of the Electron Devices Society. 7. 728–734. 4 indexed citations
16.
Yao, Jiafei, Yu Deng, Yufeng Guo, et al.. (2019). Numerical Analysis of the LDMOS With Side Triangular Field Plate. IEEE Journal of the Electron Devices Society. 7. 1055–1062. 7 indexed citations
17.
Yao, Jiafei, Yufeng Guo, Kemeng Yang, et al.. (2019). Analytical Model for the SOI Lateral Power Device With Step Width Technique and High-${k}$ Dielectric. IEEE Transactions on Electron Devices. 66(7). 3055–3059. 6 indexed citations
18.
Zhang, Jun, Yufeng Guo, David Z. Pan, et al.. (2018). Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate. IEEE Transactions on Electron Devices. 65(2). 648–654. 22 indexed citations
19.
Zhang, Jun, Yufeng Guo, David Z. Pan, et al.. (2018). A New Physical Insight for the 3-D-Layout-Induced Cylindrical Breakdown in Lateral Power Devices on SOI Substrate. IEEE Transactions on Electron Devices. 65(5). 1843–1848. 6 indexed citations
20.
Yang, Kemeng, Yufeng Guo, David Z. Pan, et al.. (2018). A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout. IEEE Transactions on Electron Devices. 65(4). 1447–1452. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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