Kemeng Yang

543 total citations
68 papers, 375 citations indexed

About

Kemeng Yang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kemeng Yang has authored 68 papers receiving a total of 375 indexed citations (citations by other indexed papers that have themselves been cited), including 59 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kemeng Yang's work include Silicon Carbide Semiconductor Technologies (46 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Semiconductor materials and devices (26 papers). Kemeng Yang is often cited by papers focused on Silicon Carbide Semiconductor Technologies (46 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers) and Semiconductor materials and devices (26 papers). Kemeng Yang collaborates with scholars based in China, United States and Israel. Kemeng Yang's co-authors include Yufeng Guo, Jun Zhang, Jiafei Yao, Fenyun Yi, Aimei Gao, Dong Shu, David Z. Pan, Xiaorong Luo, Zhenhua Zhu and Jie Wei and has published in prestigious journals such as Applied Physics Letters, Journal of Power Sources and Nanoscale.

In The Last Decade

Kemeng Yang

55 papers receiving 364 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kemeng Yang China 11 296 136 102 37 32 68 375
Vishal Thakare India 12 205 0.7× 147 1.1× 246 2.4× 35 0.9× 24 0.8× 14 358
R. Suriakarthick India 12 313 1.1× 162 1.2× 350 3.4× 34 0.9× 26 0.8× 20 446
Y. F. Wang Taiwan 9 102 0.3× 102 0.8× 155 1.5× 38 1.0× 37 1.2× 10 254
Aditya Kumar India 12 263 0.9× 155 1.1× 245 2.4× 17 0.5× 23 0.7× 28 458
A. Almaggoussi Morocco 12 260 0.9× 69 0.5× 227 2.2× 33 0.9× 16 0.5× 51 367
Qiubao Lin China 11 152 0.5× 145 1.1× 273 2.7× 82 2.2× 24 0.8× 41 362
Ayman S. Alofi Saudi Arabia 11 229 0.8× 127 0.9× 238 2.3× 18 0.5× 22 0.7× 19 338
Mehwish Khalid Butt China 11 241 0.8× 188 1.4× 253 2.5× 25 0.7× 29 0.9× 17 369
M. K. R. Khan Bangladesh 12 298 1.0× 92 0.7× 412 4.0× 49 1.3× 15 0.5× 35 455
Erik Østreng Norway 11 348 1.2× 88 0.6× 207 2.0× 15 0.4× 25 0.8× 15 407

Countries citing papers authored by Kemeng Yang

Since Specialization
Citations

This map shows the geographic impact of Kemeng Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kemeng Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kemeng Yang more than expected).

Fields of papers citing papers by Kemeng Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kemeng Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kemeng Yang. The network helps show where Kemeng Yang may publish in the future.

Co-authorship network of co-authors of Kemeng Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Kemeng Yang. A scholar is included among the top collaborators of Kemeng Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kemeng Yang. Kemeng Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Xinyu, Kemeng Yang, Jiafei Yao, et al.. (2025). Self-adaptive body bias tuning technique for enhancing Baliga's figure-of-merit (BFOM) in thin bulk silicon LDMOS. Microelectronics Journal. 156. 106559–106559.
2.
Yao, Jiafei, Jincheng Liu, Xinpeng Zhang, et al.. (2024). Gradient voltage amplification effect in FDSOI NCFET with thickness-variable ferroelectric layer. Physica Scripta. 99(6). 65207–65207. 1 indexed citations
3.
Chen, Jing, Jiajun Guo, Qing Yao, et al.. (2024). Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm. Microelectronics Journal. 153. 106410–106410. 1 indexed citations
4.
Feng, Gang, et al.. (2024). Dynamic Inductance Gradient Analysis of Series-Enhanced Four-Rail Electromagnetic Launcher. IEEE Access. 12. 62677–62686. 1 indexed citations
5.
Wei, Jie, Quan Zhou, Kemeng Yang, et al.. (2024). Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor With Double Deep P-Regions. IEEE Transactions on Electron Devices. 71(12). 8037–8040.
6.
Zhang, Jun, Jia Zhou, Jiafei Yao, et al.. (2024). Thermal-induced bandgap broadening phenomenon in copolymer organic semiconductors. Applied Physics Letters. 124(25). 1 indexed citations
7.
Chen, Jing, Kemeng Yang, Jiafei Yao, et al.. (2024). Efficient Automatic Design of IGBT Structural Parameters Using Differential Evolution and Machine Learning Model. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 44(3). 1059–1069.
8.
Hu, Ziwei, Jiafei Yao, Fan Yang, et al.. (2024). A novel double-trench SiC SBD-embedded MOSFET with improved figure-of-merit and short-circuit ruggedness. Microelectronics Journal. 155. 106495–106495.
9.
Wei, Yuxi, Tao Sun, Kemeng Yang, et al.. (2023). High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. Microelectronics Journal. 136. 105781–105781. 3 indexed citations
10.
Wei, Jie, Kemeng Yang, Jie Li, et al.. (2023). Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability. IEEE Transactions on Electron Devices. 70(5). 2622–2626. 4 indexed citations
11.
Wei, Jie, Junnan Wang, Kemeng Yang, et al.. (2023). Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT With a Self-Adapted Parasitic Thyristor. IEEE Transactions on Electron Devices. 70(12). 6486–6491. 1 indexed citations
12.
Luo, Xiaorong, et al.. (2023). Novel Ultralow Loss SOI LIGBT With a Self-Adaptive pMOS and Double Floating Ohmic Contacts. IEEE Transactions on Electron Devices. 70(10). 5196–5202. 3 indexed citations
13.
Lu, Juan, et al.. (2022). Low Turn-On Voltage and High Breakdown Voltage β-Ga2O3 Diode With Fin Channel and Ohmic Contact Anode. IEEE Transactions on Electron Devices. 70(1). 196–203. 10 indexed citations
14.
Guo, Yufeng, et al.. (2020). The New Structure and Analytical Model of a High-Voltage Interconnection Shielding Structure With High-k Dielectric Pillar. IEEE Transactions on Electron Devices. 67(4). 1745–1750. 5 indexed citations
15.
Zhang, Jun, Yufeng Guo, Kemeng Yang, Chen-Yang Huang, & Fangren Hu. (2019). Modeling of the Variation of Lateral Doping (VLD) Lateral Power Devices via 1-D Analysis Using Effective Concentration Profile Concept. IEEE Journal of the Electron Devices Society. 7. 990–996. 7 indexed citations
16.
Tian, Tao, Yufeng Guo, Jiafei Yao, et al.. (2019). Area-Efficient and Snapback-Free SOI LIGBT With L-Shaped Extraction Path. IEEE Journal of the Electron Devices Society. 7. 728–734. 4 indexed citations
17.
Zhang, Jun, Yufeng Guo, David Z. Pan, et al.. (2018). Effective Doping Concentration Theory: A New Physical Insight for the Double-RESURF Lateral Power Devices on SOI Substrate. IEEE Transactions on Electron Devices. 65(2). 648–654. 22 indexed citations
18.
Zhang, Jun, Yufeng Guo, David Z. Pan, et al.. (2018). A New Physical Insight for the 3-D-Layout-Induced Cylindrical Breakdown in Lateral Power Devices on SOI Substrate. IEEE Transactions on Electron Devices. 65(5). 1843–1848. 6 indexed citations
19.
Tian, Tao, et al.. (2018). A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer. IEEE Journal of the Electron Devices Society. 7. 62–69. 6 indexed citations
20.
Yang, Kemeng, Yufeng Guo, David Z. Pan, et al.. (2018). A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout. IEEE Transactions on Electron Devices. 65(4). 1447–1452. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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