J.F. Rommeluère

562 citations

21 papers · 488 indexed · h-index 12

Co-authors: Vincent Sallet A. Lusson François Jomard Y. Marfaing L. Švob J. Mimila‐Arroyo V. Muñoz‐Sanjosé Pierre Galtier
Topics: ZnO doping and properties (12 papers)Copper-based nanomaterials and applications (9 papers)Advanced Semiconductor Detectors and Materials (7 papers)
Cited by: Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: France Spain Mexico

In The Last Decade

J.F. Rommeluère

21 papers receiving 480 citations

Peers

Countries citing papers authored by J.F. Rommeluère

Since Specialization

Citations

This map shows the geographic impact of J.F. Rommeluère's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.F. Rommeluère with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.F. Rommeluère more than expected).

Fields of papers citing papers by J.F. Rommeluère

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.F. Rommeluère. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.F. Rommeluère. The network helps show where J.F. Rommeluère may publish in the future.

Co-authorship network of co-authors of J.F. Rommeluère

This figure shows the co-authorship network connecting the top 25 collaborators of J.F. Rommeluère. A scholar is included among the top collaborators of J.F. Rommeluère based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.F. Rommeluère. J.F. Rommeluère is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Vibrational spectroscopy of undoped and nitrogen-doped ZnO grown by metalorganic chemical vapor deposition 2005 ·Applied Physics Letters ·N. H. Nickel,(unknown),J.F. Rommeluère,Pierre Galtier	44
2	Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness 2005 ·Applied Physics Letters ·A. Zubiaga,Filip Tuomisto,F. Plazaola,K. Saarinen,José Antonio Millán-García,J.F. Rommeluère,J. Zúñiga‐Pérez,V. Muñoz‐Sanjosé	55
3	Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO 2005 ·physica status solidi (a) ·Jinzhong Wang,Vincent Sallet,(unknown),J.F. Rommeluère,A. Lusson,E. Rzepka,John E. Lewis,Pierre Galtier,O. Gorochov	18
4	Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates 2005 ·MRS Proceedings ·J. Mimila‐Arroyo,J.F. Rommeluère,M. Barbé,F. Jomard,A. Tromson‐Carli,O. Gorochov,Y. Marfaing,Pierre Galtier	4
5	Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy 2004 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J.F. Rommeluère,L. Švob,J. Mimila‐Arroyo,(unknown),François Jomard,(unknown),A. Lusson,Vincent Sallet,Pierre Galtier,Y. Marfaing	1
6	Morphology of ZnO grown by MOCVD on sapphire substrates 2004 ·Journal of Crystal Growth ·Carmen Munuera,J. Zúñiga‐Pérez,J.F. Rommeluère,Vincent Sallet,R. Triboulet,F. Soria,V. Muñoz‐Sanjosé,Carmen Ocal	34
7	Nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy 2004 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J.F. Rommeluère,L. Švob,François Jomard,J. Mimila‐Arroyo,(unknown),A. Lusson,Vincent Sallet,O. Gorochov,Pierre Galtier,Y. Marfaing	8
8	Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy 2003 ·Applied Physics Letters ·J.F. Rommeluère,L. Švob,François Jomard,J. Mimila‐Arroyo,A. Lusson,Vincent Sallet,Y. Marfaing	125
9	Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol 2002 ·Materials Letters ·Vincent Sallet,(unknown),J.F. Rommeluère,A. Lusson,A. Riviére,J.P. Rivière,O. Gorochov,R. Triboulet,V. Muñoz‐Sanjosé	36
10	MOCVD Growth of ZnO on Sapphire Using Tert-Butanol 2002 ·physica status solidi (b) ·Vincent Sallet,J.F. Rommeluère,A. Lusson,(unknown),S. Fusil,O. Gorochov,R. Triboulet	15
11	Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition 2002 ·Journal of Applied Physics ·B. Theys,Vincent Sallet,François Jomard,A. Lusson,J.F. Rommeluère,(unknown)	72
12	Optical properties of CdS layers grown by MOVPE on (211) B and (100) GaAs 2000 ·Semiconductor Science and Technology ·Vincent Sallet,A. Lusson,A. Tromson‐Carli,A. Riviére,J.P. Rivière,J.F. Rommeluère,Y. Marfaing	4
13	Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe:As layers 2000 ·Journal of Applied Physics ·(unknown),B. Theys,A. Lusson,D. Côté,J.F. Rommeluère,François Jomard,C. Dolin	2
14	Advances in HgCdTe N—P—N—P photoconductive structures 1998 ·Journal of Crystal Growth ·(unknown),(unknown),J.F. Rommeluère,A. Tromson‐Carli,R. Triboulet,Y. Marfaing	3
15	Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation 1998 ·Journal of Crystal Growth ·L. Švob,(unknown),A. Lusson,D. Ballutaud,J.F. Rommeluère,Y. Marfaing	12
16	Binding of Excitons around Hg Atoms in Zn<sub>x</sub>Hg<sub>1-x</sub> Te and Cd<sub>x</sub>Hg<sub>1-x</sub>Te Alloys 1991 ·Materials science forum ·(unknown),Y. Marfaing,A. Lusson,R. Triboulet,J.F. Rommeluère	3
17	Preparation, analysis and properties of high purity Zn(l−x)MgxTe alloys 1980 ·Journal of Electronic Materials ·Gilles de Revel,J.-L. Pastol,J.C. Rouchaud,M. Fédoroff,J. C. Guillaume,J. Chevallier,J.F. Rommeluère	7
18	Luminescence and electrical properties of Mg_xZn_1-xTe alloys 1979 ·IEEE Transactions on Electron Devices ·(unknown),J. Chevallier,J.F. Rommeluère,(unknown),B. Schaub	16
19	Luminescence and bandgap studies of high purity MgXZn1−XTe Ternary Alloys 1978 ·Journal of Electronic Materials ·Joseph E. Marine,(unknown),B. Schaub,A. Laugier,D. Barbier,J. C. Guillaume,J.F. Rommeluère,J. Chevallier	11
20	Conditions de croissance et luminescence des alliages Zn1-xMg xTe 1976 ·Revue de Physique Appliquée ·J. C. Guillaume,J. Chevallier,J.F. Rommeluère,(unknown),Gilles de Revel	16

About J.F. Rommeluère

J.F. Rommeluère is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 21 papers that have together received 488 indexed citations. Recurring topics across this work include ZnO doping and properties (12 papers), Copper-based nanomaterials and applications (9 papers) and Advanced Semiconductor Detectors and Materials (7 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (227 citations), Materials Chemistry (424 citations) and Electrical and Electronic Engineering (316 citations). J.F. Rommeluère has collaborated with scholars based in France, Spain and Mexico. Frequent co-authors include Vincent Sallet, A. Lusson, François Jomard, Y. Marfaing, L. Švob, J. Mimila‐Arroyo, V. Muñoz‐Sanjosé, Pierre Galtier, B. Theys and R. Triboulet. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

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