J.F. Rommeluère

562 citations

21 papers · 488 indexed · h-index 12

Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 2
Materials Chemistry top 10%
- ZnO doping and properties 12
- Copper-based nanomaterials and applications 9
- Quantum Dots Synthesis And Properties 4
Electrical and Electronic Engineering top 10%
- Advanced Semiconductor Detectors and Materials 7
- Chalcogenide Semiconductor Thin Films 7
- Gas Sensing Nanomaterials and Sensors 6
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 4

Co-authors: Vincent Sallet A. Lusson François Jomard Y. Marfaing L. Švob J. Mimila‐Arroyo V. Muñoz‐Sanjosé Pierre Galtier
Cited by: Electronic, Optical and Magnetic Materials Materials Chemistry Electrical and Electronic Engineering
Journals: Applied Physics Letters (3 papers)Journal of Crystal Growth (3 papers)Journal of Applied Physics (2 papers)
Partner nations: France Spain Mexico

In The Last Decade

J.F. Rommeluère

21 papers receiving 480 citations

Peers

Countries citing papers authored by J.F. Rommeluère

Since Specialization

Citations

This map shows the geographic impact of J.F. Rommeluère's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.F. Rommeluère with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.F. Rommeluère more than expected).

Fields of papers citing papers by J.F. Rommeluère

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.F. Rommeluère. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.F. Rommeluère. The network helps show where J.F. Rommeluère may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J.F. Rommeluère, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.F. Rommeluère Line = papers co-authored together J.F. Rommeluère links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Vibrational spectroscopy of undoped and nitrogen-doped ZnO grown by metalorganic chemical vapor deposition Applied Physics Letters ·N. H. Nickel,曲婕,J.F. Rommeluère,Pierre Galtier	2005	44
2	Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness Applied Physics Letters ·A. Zubiaga,Filip Tuomisto,F. Plazaola,K. Saarinen,José Antonio Millán-García,J.F. Rommeluère,J. Zúñiga‐Pérez,V. Muñoz‐Sanjosé	2005	55
3	Growth Parameters and Substrate Treatment for the MOCVD Growth of ZnO physica status solidi (a) ·Jinzhong Wang,Vincent Sallet,R. Plansenzotti,J.F. Rommeluère,A. Lusson,E. Rzepka,John E. Lewis,Pierre Galtier,O. Gorochov	2005	18
4	Growth and Electrical Properties of ZnO Grown by Closed Space Vapor Transport on Sapphire Substrates MRS Proceedings ·J. Mimila‐Arroyo,J.F. Rommeluère,M. Barbé,F. Jomard,A. Tromson‐Carli,O. Gorochov,Y. Marfaing,Pierre Galtier	2005	4
5	Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·J.F. Rommeluère,L. Švob,J. Mimila‐Arroyo,Adam L. Gierlach,François Jomard,R. Plansenzotti,A. Lusson,Vincent Sallet,Pierre Galtier,Y. Marfaing	2004	1
6	Morphology of ZnO grown by MOCVD on sapphire substrates Journal of Crystal Growth ·Carmen Munuera,J. Zúñiga‐Pérez,J.F. Rommeluère,Vincent Sallet,R. Triboulet,F. Soria,V. Muñoz‐Sanjosé,Carmen Ocal	2004	34
7	Nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J.F. Rommeluère,L. Švob,François Jomard,J. Mimila‐Arroyo,R. Plansenzotti,A. Lusson,Vincent Sallet,O. Gorochov,Pierre Galtier,Y. Marfaing	2004	8
8	Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy Applied Physics Letters ·J.F. Rommeluère,L. Švob,François Jomard,J. Mimila‐Arroyo,A. Lusson,Vincent Sallet,Y. Marfaing	2003	125
9	Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol Materials Letters ·Vincent Sallet,Namatayi Nyoka,J.F. Rommeluère,A. Lusson,A. Riviére,J.P. Rivière,O. Gorochov,R. Triboulet,V. Muñoz‐Sanjosé	2002	36
10	MOCVD Growth of ZnO on Sapphire Using Tert-Butanol physica status solidi (b) ·Vincent Sallet,J.F. Rommeluère,A. Lusson,W. Kaminsky,S. Fusil,O. Gorochov,R. Triboulet	2002	15
11	Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition Journal of Applied Physics ·B. Theys,Vincent Sallet,François Jomard,A. Lusson,J.F. Rommeluère,FLORENCE CONES	2002	72
12	Optical properties of CdS layers grown by MOVPE on (211) B and (100) GaAs Semiconductor Science and Technology ·Vincent Sallet,A. Lusson,A. Tromson‐Carli,A. Riviére,J.P. Rivière,J.F. Rommeluère,Y. Marfaing	2000	4
13	Behavior of hydrogen intentionally introduced by plasma into metalorganic vapor phase epitaxy grown CdTe:As layers Journal of Applied Physics ·Rémy Beulé Dauzat,B. Theys,A. Lusson,D. Côté,J.F. Rommeluère,François Jomard,C. Dolin	2000	2
14	Advances in HgCdTe N—P—N—P photoconductive structures Journal of Crystal Growth ·Guoyou Shan,元二宮,J.F. Rommeluère,A. Tromson‐Carli,R. Triboulet,Y. Marfaing	1998	3
15	Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation Journal of Crystal Growth ·L. Švob,Martin Mašlan,A. Lusson,D. Ballutaud,J.F. Rommeluère,Y. Marfaing	1998	12
16	Binding of Excitons around Hg Atoms in Zn<sub>x</sub>Hg<sub>1-x</sub> Te and Cd<sub>x</sub>Hg<sub>1-x</sub>Te Alloys Materials science forum ·E. D. Schell,Y. Marfaing,A. Lusson,R. Triboulet,J.F. Rommeluère	1991	3
17	Preparation, analysis and properties of high purity Zn(l−x)MgxTe alloys Journal of Electronic Materials ·Gilles de Revel,J.-L. Pastol,J.C. Rouchaud,M. Fédoroff,J. C. Guillaume,J. Chevallier,J.F. Rommeluère	1980	7
18	Luminescence and electrical properties of Mg_xZn_1-xTe alloys IEEE Transactions on Electron Devices ·J. grab. Abruñedo,J. Chevallier,J.F. Rommeluère,P.P.,B. Schaub	1979	16
19	Luminescence and bandgap studies of high purity MgXZn1−XTe Ternary Alloys Journal of Electronic Materials ·Joseph E. Marine,Sf Nemec,B. Schaub,A. Laugier,D. Barbier,J. C. Guillaume,J.F. Rommeluère,J. Chevallier	1978	11
20	Conditions de croissance et luminescence des alliages Zn1-xMg xTe Revue de Physique Appliquée ·J. C. Guillaume,J. Chevallier,J.F. Rommeluère,Rao Narasimha Desirazu,Gilles de Revel	1976	16

About J.F. Rommeluère

J.F. Rommeluère is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 21 papers that have together received 488 indexed citations. Recurring topics across this work include ZnO doping and properties (12 papers), Copper-based nanomaterials and applications (9 papers), Advanced Semiconductor Detectors and Materials (7 papers), Chalcogenide Semiconductor Thin Films (7 papers), Gas Sensing Nanomaterials and Sensors (6 papers), Quantum Dots Synthesis And Properties (4 papers), Semiconductor Quantum Structures and Devices (4 papers) and Ga2O3 and related materials (2 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (227 citations), Materials Chemistry (424 citations) and Electrical and Electronic Engineering (316 citations). J.F. Rommeluère has collaborated with scholars based in France, Spain and Mexico. Frequent co-authors include Vincent Sallet, A. Lusson, François Jomard, Y. Marfaing, L. Švob, J. Mimila‐Arroyo, V. Muñoz‐Sanjosé, Pierre Galtier, B. Theys and R. Triboulet. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Journal of Electronic Materials and IEEE Transactions on Electron Devices.

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