E. Malguth

481 total citations
22 papers, 389 citations indexed

About

E. Malguth is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, E. Malguth has authored 22 papers receiving a total of 389 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Materials Chemistry, 10 papers in Electronic, Optical and Magnetic Materials and 9 papers in Condensed Matter Physics. Recurrent topics in E. Malguth's work include ZnO doping and properties (10 papers), Ga2O3 and related materials (9 papers) and GaN-based semiconductor devices and materials (9 papers). E. Malguth is often cited by papers focused on ZnO doping and properties (10 papers), Ga2O3 and related materials (9 papers) and GaN-based semiconductor devices and materials (9 papers). E. Malguth collaborates with scholars based in Germany, Australia and United States. E. Malguth's co-authors include A. Hoffmann, Matthew R. Phillips, W. Gehlhoff, Xianglan Xu, O. Gelhausen, Y. Aksu, Matthias Drieß, Gordon Callsen, Sebastian Polarz and Markus R. Wagner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

E. Malguth

19 papers receiving 381 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Malguth Germany 7 309 167 165 160 57 22 389
C. Boemare Portugal 8 294 1.0× 181 1.1× 173 1.0× 127 0.8× 50 0.9× 16 386
Christian Lidig Germany 9 275 0.9× 167 1.0× 204 1.2× 119 0.7× 96 1.7× 10 386
Y.D. Park South Korea 8 564 1.8× 339 2.0× 236 1.4× 126 0.8× 73 1.3× 15 647
Jian Liang China 12 216 0.7× 126 0.8× 132 0.8× 132 0.8× 115 2.0× 39 337
M. Španková Slovakia 12 224 0.7× 192 1.1× 122 0.7× 184 1.1× 31 0.5× 48 392
N. N. Bao Singapore 14 377 1.2× 156 0.9× 165 1.0× 66 0.4× 44 0.8× 18 438
Pablo Cayado Germany 12 216 0.7× 115 0.7× 75 0.5× 346 2.2× 35 0.6× 34 427
H. S. Craft United States 11 241 0.8× 155 0.9× 226 1.4× 187 1.2× 60 1.1× 22 397
An-Jen Cheng United States 10 319 1.0× 152 0.9× 208 1.3× 68 0.4× 33 0.6× 15 410
Xinhong Cheng China 11 180 0.6× 100 0.6× 220 1.3× 139 0.9× 48 0.8× 22 325

Countries citing papers authored by E. Malguth

Since Specialization
Citations

This map shows the geographic impact of E. Malguth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Malguth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Malguth more than expected).

Fields of papers citing papers by E. Malguth

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Malguth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Malguth. The network helps show where E. Malguth may publish in the future.

Co-authorship network of co-authors of E. Malguth

This figure shows the co-authorship network connecting the top 25 collaborators of E. Malguth. A scholar is included among the top collaborators of E. Malguth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Malguth. E. Malguth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Klesse, W. M., et al.. (2020). Fast scatterometric measurement of periodic surface structures in plasma-etching processes. Measurement. 170. 108721–108721. 1 indexed citations
3.
Camus, Christian, Claudia Buerhop‐Lutz, Jessica G. J. Adams, et al.. (2016). Direct Evidence for Hot-Cell-Induced Modifications in PV Module Encapsulants. EU PVSEC. 1548–1551. 1 indexed citations
4.
Malguth, E., et al.. (2014). Variations in Cross-Link Properties of EVA of Un-Aged and Aged PV-Modules. EU PVSEC. 2462–2466. 2 indexed citations
5.
Wohlgemuth, J., et al.. (2013). Examination of a Standardized Test for Evaluating the Degree of Cure of EVA Encapsulation. University of North Texas Digital Library (University of North Texas). 2 indexed citations
6.
Malguth, E., et al.. (2013). Fast and Non-Destructive Determination of the EVA Cross-Linking Degree for In-Line and Off-Line Application. EU PVSEC. 472–475. 5 indexed citations
7.
Malguth, E., Gordon Callsen, Thomas Barthel, et al.. (2012). Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications. Applied Physics A. 108(3). 719–726. 4 indexed citations
8.
Löper, Philipp, Ralph Müller, Daniel Hiller, et al.. (2011). Quasi-Fermi-level splitting in ideal silicon nanocrystal superlattices. Physical Review B. 84(19). 36 indexed citations
9.
Melton, Andrew, E. Malguth, Hongbo Yu, et al.. (2011). Electrical and magnetic properties of Ga1−xGdxN grown by metal organic chemical vapor deposition. Journal of Applied Physics. 110(8). 18 indexed citations
10.
Malguth, E., A. Laades, Thomas Barthel, et al.. (2011). Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications. Journal of Non-Crystalline Solids. 358(17). 2253–2256. 3 indexed citations
11.
Malguth, E., et al.. (2010). Development of ultra‐thin tunneling oxides and Si/SiO2 nanostructures for the application in silicon solar cells. physica status solidi (a). 208(3). 612–615. 4 indexed citations
12.
Malguth, E., A. Hoffmann, & Matthew R. Phillips. (2008). Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics. 104(12). 4 indexed citations
13.
Malguth, E., A. Hoffmann, & Matthew R. Phillips. (2008). Fe in III–V and II–VI semiconductors. physica status solidi (b). 245(3). 455–480. 99 indexed citations
14.
Melton, Andrew, et al.. (2008). Rare Earth Doping of GaN with Gadolinium by MOCVD. 1 indexed citations
15.
Malguth, E., A. Hoffmann, W. Gehlhoff, Matthew H. Kane, & Ian T. Ferguson. (2007). Mn charge states in GaMnN as a function of Mn concentration and co-doping. MRS Proceedings. 1040. 2 indexed citations
16.
Malguth, E., A. Hoffmann, & Xianglan Xu. (2006). InternalE5→T25transition ofFe2+in GaN. Physical Review B. 74(16). 15 indexed citations
17.
Kane, Matthew H., Martin Straßburg, William E. Fenwick, et al.. (2006). Optical studies of MOCVD‐grown GaN‐based ferromagnetic semiconductor epilayers and devices. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2237–2240. 6 indexed citations
18.
Malguth, E., A. Hoffmann, W. Gehlhoff, et al.. (2006). Structural and electronic properties ofFe3+andFe2+centers in GaN from optical and EPR experiments. Physical Review B. 74(16). 87 indexed citations
19.
Malguth, E., A. Hoffmann, Matthew R. Phillips, & W. Gehlhoff. (2005). Fe-Centers in GaN as Candidates for Spintronics Applications. MRS Proceedings. 892. 1 indexed citations
20.
Gelhausen, O., E. Malguth, Matthew R. Phillips, et al.. (2004). Doping-level-dependent optical properties of GaN:Mn. Applied Physics Letters. 84(22). 4514–4516. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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