K. Stiles

743 total citations
31 papers, 547 citations indexed

About

K. Stiles is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, K. Stiles has authored 31 papers receiving a total of 547 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 10 papers in Surfaces, Coatings and Films. Recurrent topics in K. Stiles's work include Semiconductor materials and devices (12 papers), Electron and X-Ray Spectroscopy Techniques (10 papers) and Surface and Thin Film Phenomena (9 papers). K. Stiles is often cited by papers focused on Semiconductor materials and devices (12 papers), Electron and X-Ray Spectroscopy Techniques (10 papers) and Surface and Thin Film Phenomena (9 papers). K. Stiles collaborates with scholars based in United States, China and Germany. K. Stiles's co-authors include A. Kahn, Antoine Kahn, D. Kilday, G. Margaritondo, A. Paton, S. F. Horng, C. B. Duke, D. Mao, A. Kahn and J. T. McKinley and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

K. Stiles

30 papers receiving 521 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Stiles United States 13 366 334 148 111 70 31 547
Tatsuo Yokotsuka Japan 11 319 0.9× 155 0.5× 123 0.8× 66 0.6× 61 0.9× 28 384
R. Bierwolf Germany 7 325 0.9× 249 0.7× 55 0.4× 170 1.5× 61 0.9× 9 431
R. W. Streater Canada 12 250 0.7× 250 0.7× 42 0.3× 105 0.9× 78 1.1× 31 359
T.L. van Rooy Netherlands 8 399 1.1× 230 0.7× 188 1.3× 126 1.1× 75 1.1× 8 499
Z. Liliental United States 8 192 0.5× 411 1.2× 50 0.3× 124 1.1× 83 1.2× 17 525
J. Söchtig Switzerland 9 224 0.6× 254 0.8× 68 0.5× 54 0.5× 86 1.2× 14 387
S. L. Skala United States 8 302 0.8× 157 0.5× 40 0.3× 99 0.9× 80 1.1× 17 371
A. J. Hoeven Netherlands 17 614 1.7× 257 0.8× 158 1.1× 146 1.3× 181 2.6× 24 736
M. A. Herman Poland 12 353 1.0× 394 1.2× 64 0.4× 298 2.7× 50 0.7× 28 551
H. Lafontaine Canada 14 318 0.9× 405 1.2× 35 0.2× 178 1.6× 84 1.2× 55 524

Countries citing papers authored by K. Stiles

Since Specialization
Citations

This map shows the geographic impact of K. Stiles's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Stiles with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Stiles more than expected).

Fields of papers citing papers by K. Stiles

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Stiles. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Stiles. The network helps show where K. Stiles may publish in the future.

Co-authorship network of co-authors of K. Stiles

This figure shows the co-authorship network connecting the top 25 collaborators of K. Stiles. A scholar is included among the top collaborators of K. Stiles based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Stiles. K. Stiles is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gu, Xin, G. Gildenblat, G.O. Workman, et al.. (2004). A Surface Potential-Based Compact Model of n-MOSFET Gate-Tunneling Current. IEEE Transactions on Electron Devices. 51(1). 127–135. 41 indexed citations
2.
Gildenblat, G., Xiaoxiong Gu, Shachar Shapira, et al.. (2003). A Surface-Potential-Based Extrinsic Compact MOSFET Model. TechConnect Briefs. 2(2003). 364–367. 2 indexed citations
3.
Gildenblat, G., Xi Gu, Shachar Shapira, et al.. (2003). A Surface-Potential-Based Compact Model of NMOSFET Gate Tunneling Current. TechConnect Briefs. 2(2003). 318–321. 3 indexed citations
4.
Mehrotra, Sanjay, et al.. (2003). Serial 9 Mb flash EEPROM for solid state disk applications. 24–25. 3 indexed citations
5.
Shapira, Shachar, et al.. (2003). Correlations of MOSFET transconductance: Its physical origins and relevance to analog MOSFET modeling and operation. IEEE Transactions on Electron Devices. 50(3). 853–858. 1 indexed citations
6.
7.
Kizilyalli, I.C., et al.. (2002). A very high performance and manufacturable 3.3 V 0.35-μm CMOS technology for ASICs. 31–34. 3 indexed citations
8.
Zhang, Qiang, et al.. (2001). Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data. Solid-State Electronics. 45(9). 1537–1547. 2 indexed citations
9.
Kahn, Antoine, K. Stiles, D. Mao, et al.. (1989). Formation of schottky barriers on GaAs(110): from adsorbate-lnduced gap states to interface metallicity. Journal of Electronic Materials. 18(1). 33–37. 4 indexed citations
10.
Brandes, G. R., K. F. Canter, C. B. Duke, et al.. (1989). Observation of differences between low-energy electron- and positron-diffraction structural determinations of the cleavage faces of CdSe. Physical Review Letters. 62(16). 1876–1879. 31 indexed citations
11.
Stiles, K. & Antoine Kahn. (1989). Stiles and Kahn Reply. Physical Review Letters. 62(5). 606–606. 2 indexed citations
12.
Stiles, K., D. Mao, & Antoine Kahn. (1988). Oxygen adsorbed on GaAs(110) surfaces: The effect of temperature on band bending. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(4). 1170–1173. 23 indexed citations
13.
Stiles, K., Antoine Kahn, D. Kilday, J. T. McKinley, & G. Margaritondo. (1988). E F pinning at the Sn/GaAs(110) interface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1462–1465. 13 indexed citations
14.
Duke, C. B., et al.. (1988). Dynamical analysis of low-energy electron diffraction intensities from CdSe(). Surface Science. 197(1-2). 11–23. 17 indexed citations
15.
Stiles, K. & A. Kahn. (1988). Correlation betweenEFpinning and development of metallic character in Ag overlayers on GaAs(110). Physical Review Letters. 60(5). 440–443. 126 indexed citations
16.
Stiles, K., S. F. Horng, Antoine Kahn, et al.. (1988). Trends in temperature-dependent Schottky barrier formation: The Ga/GaAs and Mn/GaAs interfaces. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(4). 1392–1396. 32 indexed citations
17.
Stiles, K., Antoine Kahn, D. Kilday, & G. Margaritondo. (1987). Initial stages of Schottky barrier formation: Temperature effects. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(4). 987–991. 94 indexed citations
18.
Duke, C. B., et al.. (1987). Relaxation and surface states on wurtzite cleavage faces:CdSe(101¯0). Physical review. B, Condensed matter. 36(17). 9406–9409. 12 indexed citations
19.
Mailhiot, C., C. B. Duke, A. Paton, Antoine Kahn, & K. Stiles. (1986). Summary Abstract: Atomic geometry and electronic structure of the (311)-(1×1) surfaces of GaAs. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(4). 1083–1084. 2 indexed citations
20.
Duke, C. B., C. Mailhiot, A. Paton, Antoine Kahn, & K. Stiles. (1986). Atomic and electronic structure of the (311) surfaces of GaAs. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 947–952. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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