Desirée Queren

725 total citations
21 papers, 578 citations indexed

About

Desirée Queren is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Desirée Queren has authored 21 papers receiving a total of 578 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 14 papers in Condensed Matter Physics and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Desirée Queren's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor Lasers and Optical Devices (9 papers). Desirée Queren is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (12 papers) and Semiconductor Lasers and Optical Devices (9 papers). Desirée Queren collaborates with scholars based in Germany, France and Sweden. Desirée Queren's co-authors include Uwe Strauß, Stephan Lutgen, Adrian Avramescu, Marc Schillgalies, G. Brüderl, Jens Müller, Teresa Lermer, Ulrich T. Schwarz, Christoph Eichler and A. Laubsch and has published in prestigious journals such as Applied Physics Letters, Optics Express and Surface and Coatings Technology.

In The Last Decade

Desirée Queren

20 papers receiving 543 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Desirée Queren Germany 12 451 408 269 116 101 21 578
Toshiyuki Tanahashi Japan 15 343 0.8× 471 1.2× 391 1.5× 113 1.0× 86 0.9× 38 672
K. Sebald Germany 16 335 0.7× 511 1.3× 387 1.4× 141 1.2× 212 2.1× 65 805
I. Berishev United States 10 281 0.6× 122 0.3× 238 0.9× 137 1.2× 62 0.6× 36 448
Shingo Masui Japan 12 475 1.1× 426 1.0× 284 1.1× 121 1.0× 118 1.2× 22 601
I. Eliashevich United States 13 362 0.8× 221 0.5× 331 1.2× 80 0.7× 52 0.5× 28 492
Shu Yuan Singapore 16 241 0.5× 344 0.8× 349 1.3× 52 0.4× 126 1.2× 38 626
T. J. Schmidt United States 17 728 1.6× 520 1.3× 478 1.8× 312 2.7× 146 1.4× 48 1.1k
Christoph Eichler Germany 19 584 1.3× 525 1.3× 409 1.5× 102 0.9× 172 1.7× 41 754
Peter M. Sandvik United States 13 459 1.0× 235 0.6× 465 1.7× 201 1.7× 106 1.0× 31 720
Takatoshi Ikegami Japan 5 494 1.1× 357 0.9× 174 0.6× 152 1.3× 115 1.1× 6 563

Countries citing papers authored by Desirée Queren

Since Specialization
Citations

This map shows the geographic impact of Desirée Queren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Desirée Queren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Desirée Queren more than expected).

Fields of papers citing papers by Desirée Queren

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Desirée Queren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Desirée Queren. The network helps show where Desirée Queren may publish in the future.

Co-authorship network of co-authors of Desirée Queren

This figure shows the co-authorship network connecting the top 25 collaborators of Desirée Queren. A scholar is included among the top collaborators of Desirée Queren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Desirée Queren. Desirée Queren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lermer, Teresa, Marc Schillgalies, Desirée Queren, et al.. (2010). Waveguide design of green InGaN laser diodes. physica status solidi (a). 207(6). 1328–1331. 49 indexed citations
2.
Strauß, Uwe, Adrian Avramescu, Teresa Lermer, et al.. (2010). Pros and cons of green InGaN laser on c‐plane GaN. physica status solidi (b). 248(3). 652–657. 41 indexed citations
3.
Lutgen, Stephan, Adrian Avramescu, Teresa Lermer, et al.. (2010). True green InGaN laser diodes. physica status solidi (a). 207(6). 1318–1322. 43 indexed citations
4.
Queren, Desirée, Marc Schillgalies, Adrian Avramescu, et al.. (2009). Quality and thermal stability of thin InGaN films. Journal of Crystal Growth. 311(10). 2933–2936. 56 indexed citations
5.
Avramescu, Adrian, Teresa Lermer, Jens Müller, et al.. (2009). InGaN laser diodes with 50 mW output power emitting at 515 nm. Applied Physics Letters. 95(7). 95 indexed citations
6.
Queren, Desirée, Adrian Avramescu, Marc Schillgalies, et al.. (2009). Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 14 indexed citations
7.
Queren, Desirée, Adrian Avramescu, G. Brüderl, et al.. (2009). 500 nm electrically driven InGaN based laser diodes. Applied Physics Letters. 94(8). 123 indexed citations
8.
Schmidtke, B., Harald Braun, Ulrich T. Schwarz, et al.. (2009). Time resolved measurement of longitudinal mode competition in 405 nm (Al,In)GaN laser diodes. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 8 indexed citations
9.
Lutgen, Stephan, Adrian Avramescu, Teresa Lermer, et al.. (2009). Progress of blue and green InGaN laser diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7616. 76160G–76160G. 22 indexed citations
10.
Sabathil, M., et al.. (2009). Temperature dependence of blue InGaN lasers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7216. 72161C–72161C. 7 indexed citations
11.
Braun, Harald, et al.. (2008). Measurement and simulation of filamentation in (Al,In)GaN laser diodes. Optics Express. 16(10). 6846–6846. 30 indexed citations
12.
Braun, Harald, Tobias Meyer, Ulrich T. Schwarz, et al.. (2008). Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6997. 69971U–69971U. 7 indexed citations
13.
Schillgalies, Marc, G. Brüderl, S. Lutgen, et al.. (2008). True-blue InGaN laser for pico size projectors. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6894. 689417–689417. 34 indexed citations
14.
Meyer, Tobias, Harald Braun, Ulrich T. Schwarz, et al.. (2008). Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6997. 699708–699708.
15.
Müller, Ralf, Desirée Queren, Rainer Hock, et al.. (2008). Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b). 245(7). 1239–1256. 21 indexed citations
16.
Wellmann, Peter J., et al.. (2007). Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth. Materials science forum. 556-557. 259–262. 1 indexed citations
17.
Müller, Ralf, et al.. (2006). Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique. Chemical Vapor Deposition. 12(8-9). 557–561. 4 indexed citations
18.
Wellmann, Peter J., et al.. (2006). Vapor growth of SiC bulk crystals and its challenge of doping. Surface and Coatings Technology. 201(7). 4026–4031. 14 indexed citations
19.
Wellmann, Peter J., et al.. (2006). Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC. Materials science forum. 527-529. 79–82. 2 indexed citations
20.
Queren, Desirée, et al.. (2006). Evolution and stability of basal plane dislocations during bulk growth of highly n‐type doped versus highly p‐type doped 6H‐SiC. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(3). 567–570. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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